Transistors SMD Type PNP Transistors 2SB1048 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=-1A ● Collector Emitter Voltage VCEO=-60V ● High gain amplifier 0.42 0.1 C 0.46 0.1 1.Base 2.Collector 3.Emitter B E ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -7 IC -1 Collector Current - Continuous Collector Current - Pulse (Note.1) ICP -2 Collector Power Dissipation (Note.2) PD 1 TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature range Unit V A W ℃ Note.1 :PW ≤ 10 ms, Duty cycle ≤ 20% Note.2 :Value on the alumina ceramic board (12.5 × 30 × 0.7 mm) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -60 -7 Typ Max V Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 Collector-base cut-off current ICBO VCB= -60 V , IE=0 -10 Emitter cut-off current IEBO VEB= -7V , IC=0 -10 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-1mA -2 Base - emitter saturation voltage VBE(sat) IC=-500mA, IB=-1mA -2 DC current gain hFE VCE= -3V, IC= -500mA 2000 Unit uA V 100000 ■ Marking Marking BT www.kexin.com.cn 1 Transistors SMD Type PNP Transistors 2SB1048 ■ Typical Characterisitics Area of Safe Operation –10 0.4 50 10 ms Ta = 25°C 1 Shot Pulse –0.1 m W m –0.2 –0.1 m m –0.02 m –0.2 –0.01 m IB = 0 A –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) Saturation Voltage vs. Collector Current –10 –3 VBE (sat) VCE (sat) Ta = 25°C IC/IB = 500 –0.3 –0.1 –10 –100 –300 100,000 m –30 –100 –300 Collector Current IC (mA) www.kexin.com.cn –1,000 DC Current Transfer Ratio hFE .6 –0 –0.04 –1.0 –30 DC Current Transfer Ratio vs. Collector Current –0.4 0 –10 Typical Output Characteristics Ta = 25°C –0.6 –0.01 –3 150 Collector to Emitter Voltage VCE (V) –1 –0.8 100 Ambient Temperature Ta (°C) PC = 1 Collector Current IC (A) –1.0 Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) –0.3 = –0.03 0 2 PW –1.0 s 0.8 –3 iC (peak) 1µ Collector Current IC (A) 1.2 s 1m Collector Power Dissipation Pc (W) (on the alumina ceramic board) Maximum Collector Dissipation Curve 30,000 Ta = 75°C 10,000 VCE = –3 V Pulse 25 –25 3,000 1,000 300 100 –30 –100 –300 –1,000 Collector Current IC (mA) –3,000 Transistors SMD Type PNP Transistors 2SB1048 ■ Typical Characterisitics Thermal Resistance θj-a (°C/W) Transient Thermal Resistance 300 100 30 10 3 Ta = 25°C Mounted on the Alumina Ceramic Board (12.5 × 30 × 0.7 mm) 1.0 0.3 1m 10 m 100 m 1 10 100 1,000 Time t (s) www.kexin.com.cn 3