Transistors SMD Type PNP Transistors BC856BS (KC856BS) ■ Features ● Low collector capacitance ● Low collector-emitter saturation voltage ● Closely matched current gain ● Reduces number of components and board space 6 5 TR2 TR1 1 4 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -80 Collector - Emitter Voltage VCEO -65 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -100 Peak Collector Current single pulse: tp ≤ 1 ms ICM -200 Peak Base Current single pulse: tp ≤ 1 ms IBM -200 Collector Power Dissipation (Per transistor) *1 (Per device) *1 Thermal Resistance From Junction To Ambient (Per transistor) *1 Thermal Resistance From Junction To Ambient (Per device) *1 Thermal Resistance From Junction To Solder Point Junction Temperature Storage Temperature range PC RθJA 200 300 Unit V mA mW 625 416 RθJSP 230 TJ 150 Tstg -65 to 150 ℃/W ℃ *1: Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. www.kexin.com.cn 1 Transistors SMD Type PNP Transistors BC856BS (KC856BS) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -80 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -65 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO Emitter cut-off current IEBO Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base - emitter voltage VBE DC current gain Typ VCB= -50 V , IE=0 -15 VCB= -30 V , IE=0,TJ=150℃ VEB= -6V , IC=0 -55 -100 -300 IC=-10 mA, IB=-0.5mA -755 -850 IC=-100 mA, IB=-5mA -900 -650 VCE= -5V, IC= -10mA hFE(1) VCE= -5V, IC= -10uA VCE=- 5V, IC= -2mA 290 2.3 Emitter capacitance Ce VEB= -0.5V, IC=ic=0,f=1MHz 10 VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ; f = 10 Hz to 15.7 KHz 1.6 VCE = -5 V; IC = -0.2 mA; RS = 2 kΩ; f = 1 KHz ,B=200Hz 2.9 ■ Marking Marking *E6 www.kexin.com.cn VCE= -5V, IC= -10mA,f=100MHz -750 270 200 VCB= -10V, IE=ie=0,f=1MHz fT mV -820 Cc Transition frequency uA nA -200 -600 nA -5 IC=-100 mA, IB=-5mA VCE= -5V, IC= -2mA Unit -100 IC=-10 mA, IB=-0.5mA hFE(2) NF Max V Collector capacitance Noise figure 2 Test Conditions 450 pF dB 100 MHz Transistors SMD Type PNP Transistors BC856BS (KC856BS) ■ Typical Characterisitics 500 Ptot 400 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curve SOT363 103 Zth(j-a) (K/W) 102 δ=1 0.50 0.75 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values www.kexin.com.cn 3 Transistors SMD Type PNP Transistors BC856BS (KC856BS) ■ Typical Characterisitics 600 −0.20 IB (mA) = −2.5 −2.25 −2.0 −1.75 −1.5 −1.25 IC (A) hFE −0.16 (1) 400 −0.12 −1.0 (2) −0.75 −0.08 200 −0.5 (3) −0.25 −0.04 0 −10−2 −10−1 −1 −10 0 −102 −103 IC (mA) VCE = −5 V 0 −2 −4 −6 −8 −10 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. Per transistor: DC current gain as a function of collector current; typical values Fig 4. Per transistor: Collector current as a function of collector-emitter voltage; typical values −1.3 VBEsat (V) −1.1 −1 VBE (V) −0.8 −0.9 . (1) (2) −0.7 (3) −0.5 −0.6 −0.3 −0.4 −10−1 −1 −10 −102 IC (mA) −103 −0.1 −10−1 VCE = −5 V; Tamb = 25 °C −1 −10 −102 IC (mA) −103 IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 5. 4 Per transistor: Base-emitter voltage as a function of collector current; typical values www.kexin.com.cn Fig 6. Per transistor: Base-emitter saturation voltage as a function of collector current; typical values Transistors SMD Type PNP Transistors BC856BS (KC856BS) ■ Typical Characterisitics 103 −10 VCEsat (V) fT (MHz) −1 102 −10−1 (1) (2) (3) −10−2 −10−1 −1 −102 −10 IC (mA) 10 −103 IC/IB = 20 −1 −10 IC (mA) −102 VCE = −5 V; Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. Per transistor: Collector-emitter saturation voltage as a function of collector current; typical values 10 Per transistor: Transition frequency as a function of collector current; typical values 15 Cc (pF) 8 Ce (pF) 13 6 11 4 9 2 7 0 0 −2 −4 −6 −8 −10 VCB (V) f = 1 MHz; Tamb = 25 °C Fig 9. Fig 8. Per transistor: Collector capacitance as a function of collector-base voltage; typical values 5 0 −2 −4 VEB (V) −6 f = 1 MHz; Tamb = 25 °C Fig 10. Per transistor: Emitter capacitance as a function of emitter-base voltage; typical values www.kexin.com.cn 5