SEME-LAB 2N2222AC3C

SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A, 2N2222AC3B
2N2222AC3C
•
High Speed Saturated Switching
•
Hermetic LCC3 Ceramic package.
•
Variant B to MIL-PRF-19500/255 outline
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
TJ
Tstg
75V
50V
6V
0.8A
500mW
2.86mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
Max.
Units
RθJA(1)
Thermal Resistance, Junction To Ambient
325
°C/W
Thermal Resistance Junction to Solder Pads
110
°C/W
RθJSP(IS)
(1)
(2)
(2)
For non-thermal conductive PCB or unknown PCB surface mount conditions in free air.
Infinite sink mount to PCB.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 9192
Issue 1
Page 1 of 3
SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A 2N2222AC3B 2N2222AC3C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
IC = 10mA
ICES
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Cut-Off Current
ICBO
Collector-Base
Cut-Off Current
(1)
V(BR)CEO
IEBO
Emitter Cut-Off Current
Min.
IB = 0
Typ.
Max.
50
VCE = 50V
Units
V
50
nA
IE = 0
VCB = 75V
10
µA
IE = 0
VCB = 60V
10
nA
TA = 150°C
10
µA
VEB = 4V
10
nA
VEB = 6V
10
µA
IC = 150mA
IB = 15mA
0.3
IC = 500mA
IB = 50mA
1.0
IC = 150mA
IB = 15mA
IC = 500mA
IB = 50mA
IC = 0.1mA
VCE = 10V
50
IC = 1.0mA
VCE = 10V
75
IC = 10mA
VCE = 10V
100
TA = -55°C
35
IC = 0
ON CHARACTERISTICS
VCE(Sat)
(1)
VBE(Sat)
(1)
hFE
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
IC = 150mA
IC = 500mA
0.6
1.2
V
V
2.0
VCE = 10V
(1)
VCE = 10V
(1)
100
325
300
30
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
VCB = 10V
IE = 0
f = 1.0MHz
8
Cibo
Input Capacitance
VEB = 0.5V
IC = 0
f = 1.0MHz
25
IC = 20mA
VCE = 20V
f = 100MHz
2.5
-
IC = 1.0mA
VCE = 10V
f = 1.0kHz
50
-
|hfe|
hfe
Magnitude of smallsignal, short-circuit
forward current transfer
ratio
Small Signal Current
Gain
pF
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 9192
Issue 1
Page 2 of 3
SILICON SWITCHING
NPN TRANSISTOR
2N2222AC3A 2N2222AC3B 2N2222AC3C
SWITCHING CHARACTERISTICS
Symbols
Parameters
Test Conditions
ton
Saturated Turn-on Time
VCC = 30V
toff
Saturated Turn-off Time
IC = 150mA
Min.
Typ.
Max.
Units
35
IB1 = 15mA
ns
300
MECHANICAL DATA
Dimensions in mm (inches)
1.40 ± 0.15
(0.055 ± 0.006)
5.59 ± 0.13
(0.22 ± 0.005)
0.23 rad.
(0.009)
3
1.27 ± 0.05
(0.05 ± 0.002)
0.64 ± 0.08
(0.025 ± 0.003)
3.81 ± 0.13
(0.15 ± 0.005)
0.25 ± 0.03
(0.01 ± 0.001)
2
4
1
0.23 min.
(0.009)
2.03 ± 0.20
(0.08 ± 0.008)
1.02 ± 0.20
(0.04 ± 0.008)
LCC3 (MO-041BA)
Underside View
Package Variant Table
Variant
A
B
C
Pad 1
Collector
Collector
Collector
Pad 2
N/C
N/C
Emitter
Pad 3
Emitter
Base
N/C
Pad 4
Base
Emitter
Base
N/C = No Connection
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 9192
Issue 1
Page 3 of 3