Transistors SMD Type PNP Transistors PBSS5160T-HF (KBSS5160T-HF) SOT-23-3 Unit: mm ■ Features 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● High efficiency, reduces heat generation 1 ● Reduces printed-circuit board area required 0.55 ● High collector current capability: IC and ICM +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● Low collector-emitter saturation voltage VCEsat 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 +0.2 -0.1 ● Pb−Free Package May be Available. The G−Suffix Denotes a 1.1 Pb−Free Lead Finish 1. Base 0-0.1 C +0.1 0.68 -0.1 2. Emitter 3. Collector B E ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO -80 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO Collector Current - Continuous Note.1 Note.2 IC -5 -1 ICP -2 Base Current IB -0.3 Base Current - Pulse IBP -1 270 Note.1 Note.2 PC RθJA Junction Temperature mW W 312 ℃/W 100 Note.3 Storage Temperature range A 465 Note.1 Tthermal Resistance From Junction to Ambient Note.2 400 1.25 Note.3 V -0.9 Collector Current - Pulse Collector Power Dissipation Unit TJ 150 Tstg -65 to 150 ℃ Note.1 : Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. Note.2 : Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad. Note.3 : Operated under pulsed conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms. www.kexin.com.cn 1 Transistors SMD Type PNP Transistors PBSS5160T-HF (KBSS5160T-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -80 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100 uA， IC=0 -5 Collector-base cut-off current ICBO Collector- emittercut-off current ICES Emitter cut-off current IEBO Typ VCB= -60 V , IE=0 -100 nA VCB= -60 V , IE=0 , TJ=150℃ -50 uA VCE= -60 V , IE=0 -100 VEB= -5V , IC=0 -100 IC=-100 mA, IB=-1mA -160 IC=-500 mA, IB=-50mA -175 VCE(sat) IC=-1 A, IB=-100mA (Note.1) -330 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-50mA -1.1 Base - emitter turn-on voltage VBE(on) VCE= -5V, IC= -1A -0.9 Equivalent on-resistance RCE(sat) DC current gain hFE Collector output capacitance Cob fT IC=-1 A, IB=-100mA (Note.1) VCE= -5V, IC= -1mA 200 350 VCE= -5V, IC= -500mA 150 250 VCE= -5V, IC= -1A 100 160 VCB= -10V, IE=ie=0,f=1MHz VCE= -10V, IC= -50mA,f=100MHz 150 220 Note.1: Pulse test: tp ≤ 300 us; δ ≤ 0.02. ■ Marking Marking U6* F ■ Typical Characterisitics 103 handbook, full pagewidth Zth (K/W) 102 δ=1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 Mounted on printed-circuit board; standard footprint. Fig.1 Transient thermal impedance as a function of pulse time; typical values. www.kexin.com.cn Unit V Collector-emitter saturation voltage Transition frequency 2 Max tp (s) 103 nA mV V 330 mΩ 15 pF MHz Transistors SMD Type PNP Transistors PBSS5160T-HF (KBSS5160T-HF) ■ Typical Characterisitics 600 −1.2 VBE hFE (V) (1) (1) 400 −0 8 (2) (2) 200 (3) −0 4 (3) 0 −10−1 −1 VCE = −5 V. (1) Tamb = 100 °C. Fig.2 −10 −102 (2) Tamb = 25 °C. 0 −10−1 −103 −104 IC (mA) −102 −10 −103 −104 IC (mA) (2) Tamb = 25 °C. VCE = −5 V. (1) Tamb = −55 °C. (3) Tamb = 100 °C. (3) Tamb = −55 °C. DC current gain as a function of collector current; typical values. −1 Fig.3 −10 Base-emitter voltage as a function of collector current; typical values. −1 VCEsat VCEsat (V) (V) −10−1 −1 (2) −10−1 −10−2 (1) (3) (2) (1) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 Collector-emitter saturation voltage as a function of collector current; typical values. −10 −102 −103 −104 IC (mA) (2) Tamb = 25 °C. IC/IB = 10. (1) Tamb = 100 °C. (3) Tamb = −55 °C. (2) Tamb = 25 °C. IC/IB = 20. (1) Tamb = 100 °C. (3) Tamb = −55 °C. Fig.4 −1 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. www.kexin.com.cn 3 Transistors SMD Type PNP Transistors PBSS5160T-HF (KBSS5160T-HF) ■ Typical Characterisitics −1.2 −10 VBEsat VCEsat (V) −1 (V) (1) −1 (2) −0.8 (3) −0.6 −10−1 (1) −0.4 (2) −10−2 −10−1 −1 Tamb = 25 °C. (1) IC/IB = 100. Fig.6 −102 −10 −103 −104 IC (mA) (6) (5) (4) (3) (2) −1 −10 IC/IB = 20. (1) Tamb = −55 °C. (2) IC/IB = 50. Collector-emitter saturation voltage as a function of collector current; typical values. −2 IC (A) −0.2 −10−1 Fig.7 −102 −103 −104 IC (mA) (2) Tamb = 25 °C. (3) Tamb = 100 °C. Base-emitter saturation voltage as a function of collector current; typical values. 103 (1) RCEsat (Ω) −1.6 102 (7) −1.2 (8) (9) . 10 −0.8 (10) 1 −0.4 (1) (2) 0 0 −2 −1 −3 Tamb = 25 °C. (1) IB = −40 mA. (2) IB = −36 mA. (3) IB = −32 mA. (5) IB = −24 mA. (6) IB = −20 mA. (7) IB = −16 mA. (4) IB = −28 mA. (8) IB = −12 mA. Fig.8 4 −4 −5 VCE (V) (9) IB = −8 mA. (10) IB = −4 mA. Collector current as a function of collector-emitter voltage; typical values. www.kexin.com.cn 10−1 −10−1 −1 −10 (3) −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. Fig.9 (2) Tamb = 25 °C. (3) Tamb = −55 °C. Equivalent on-resistance as a function of collector current; typical values. Transistors SMD Type PNP Transistors PBSS5160T-HF (KBSS5160T-HF) ■ Typical Characterisitics 500 Ptot (mW) 400 (1) 300 (2) 200 100 0 0 40 80 120 160 Tamb (°C) (1) Device mounted with 1 cm2 collector tab. (2) Device mounted on standard footprint. Fig.10 Power derating curves. www.kexin.com.cn 5