20V N-Channel Enhancement

LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
LN2302LT1G
●APPLICATIONS
1)High Density Cell Design For Ultra Low On-Resistance
3
Improved Shoot-Through FOM
2)We declare that the material of product compliant with RoHS
1
requirements and Halogen Free
2
SOT– 23 (TO–236AB)
●FEATURES
VDS= 20V
RDS(ON), Vgs@4.5V, Ids@2.8A = 60m Ω
RDS(ON), Vgs@2.5V, Ids@2.0A = 115m Ω
3 D
●DEVICE MARKING AND ORDERING INFORMATION
Device
LN2302LT1G
LN2302LT3G
Marking
N02
N02
G
Shipping
3000/Tape&Reel
10000/Tape&Reel
1
2
S
●MAXIMUM RATINGS(Ta = 25℃)
Limits
Unit
20
V
±8
V
2.3
A
8
A
TA = 25°C
0.9
PD
W
Maximum Power Dissipation
TA = 75°C
0.57
Operating and Storage Temperature Range
TJ, Tstg –55 to +150 °C
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note1)
Junction to Ambient Thermal Resistance(PCB
mounted)(Note 2)
Symbol
VDSS
VGS
ID
IDM
RθJA
145
°C/W
1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2. 1-in2 2oz Cu PCB board
July , 2015
Rev .B 1/5
LESHAN RADIO COMPANY, LTD.
LN2302LT1G
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
STATIC
Parameter
Drain−to−Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Drain−to−Source On Resistance
Forward Diode Voltage
Forward Transconductance
DYNAMIC(Note 3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Symbol
V(BR)DSS
VGS(TH)
IDSS
IGSS
RDS(on)
VSD
gFS
Ciss
Coss
Crss
QG
QGS
QGD
td(on)
tr
td(off)
tf
Min.
20
0.6
–
–
–
–
Typ.
–
0.95
–
–
40
50
–
6.5
–
–
–
–
–
–
–
–
–
–
427.12
80.56
57.00
3.69
0.70
1.06
6.16
7.56
16.61
4.07
Max. Unit Conditions
–
V VGS = 0 V, ID = 250 μA
1.2
V VGS = VDS, ID = 250 μA
-1
μA VDS=9.6V, VGS=0V
±100 nA VDS = 0 V, VGS = ±8 V
60 m Ω VGS = 4.5 V, ID =2.8 A
115 m Ω VGS = 2.5 V, ID = 2 A
1.2
V VGS = 0 V, ISD = -1.6A
–
S VDS = 5.0 V, ID = 4 A
–
–
–
–
–
–
–
–
–
–
pF
VGS = 0 V, f = 1.0 MHz,
VDS= 6 V
nC
VGS =4.5 V,VDS = 6 V
ID = 2.8 A
ns
VDD = 6V, RL = 6 Ω
ΙD = 1Α, VGEN = 4.5V
RG = 6 Ω
3.Pulse test: pulse width ≦ 300us, duty cycle≦ 2%
July , 2015
Rev .B 2/5
LESHAN RADIO COMPANY, LTD.
LN2302LT1G
ELECTRICAL CHARACTERISTIC CURVES
16
14
VDS=5V
14
12
12
10
ID (A)
ID (A)
10
8
8
6
6
4
4
2
2
0
0
0.0
0.5
1.0
1.5
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
2.5
VGS (V)
VDS(V)
VGS=1.5V
FIG.1 Transfer Characteristics
VGS=2.0V
VGS=2.5V
FIG.2 On-Region Characteristics
0.50
0.5
0.45
ID=3.5A
0.40
0.4
0.30
RDSon (Ω)
RDSon (Ω)
0.35
0.25
0.20
0.3
0.2
0.15
0.10
0.1
0.05
0.00
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
ID (A)
VGS=1.8V
VGS=2.5V
FIG.3 On-Resistance vs. Drain Current
July , 2015
0.0
0
1
2
3
4
5
6
7
8
VGS (V)
VGS=4.5V
FIG.4 On-Resistance vs. Gate-to-Source Voltage
Rev .B 3/5
LESHAN RADIO COMPANY, LTD.
LN2302LT1G
ELECTRICAL CHARACTERISTIC CURVES
0.16
1.2
ID=250uA
1.0
0.14
VGSth (V)
RDSon (Ω)
0.8
0.12
0.10
0.6
0.4
0.08
0.2
0.06
0.0
-50 -25
0
25
50
75 100 125 150
Ta (℃)
FIG.7 On-Resistance vs. Junction Temperature
July , 2015
-50
-25
0
25
50
75
100 125 150
Ta (℃)
FIG.8 VTH vs. Junction Temperature
Rev .B 4/5
LESHAN RADIO COMPANY, LTD.
LN2302LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
DIM
B S
G
C
D
H
K
J
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
A
B
C
D
G
H
J
K
L
S
V
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
July , 2015
inches
mm
Rev .B 5/5