XPTTM 650V IGBT GenX3TM w/ Diode IXYK100N65B3D1

Advance Technical Information
IXYK100N65B3D1
IXYX100N65B3D1
XPTTM 650V IGBT
GenX3TM w/ Diode
VCES =
IC110 =
VCE(sat) 
tfi(typ) =
Extreme Light Punch Through
IGBT for 10-30kHz Switching
650V
100A
1.85V
73ns
TO-264 (IXYK)
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Maximum Ratings
650
650
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
ILRMS
IC110
IF110
ICM
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
225
160
100
67
460
A
A
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
50
600
A
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 150°C, RG = 3
Clamped Inductive Load
ICM = 200
@VCE  VCES
A
tsc
(SCSOA)
VGE = 15V, VCE = 360V, TJ = 150°C
RG = 10, Non Repetitive
8
μs
PC
TC = 25°C
830
W

-55 ... +175
175
-55 ... +175
°C
°C
°C

300
260
°C
°C

TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque (TO-264)
FC
Mounting Force
Weight
TO-264
PLUS247
(PLUS247)
1.13/10
Nm/lb.in
20..120 /4.5..27
N/lb
10
6
g
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
650
IC
= 250μA, VGE = 0V
VGE(th)
IC
= 250μA, VCE = VGE
ICES
VCE = VCES, VGE = 0V
6.0
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 70A, VGE = 15V, Note 1
TJ = 150°C
© 2014 IXYS CORPORATION, All Rights Reserved
V
50 μA
3 mA
TJ = 150°C
1.53
1.77
Tab
PLUS247 (IXYX)
G
G
C
E
G = Gate
C = Collector
Tab
E
= Emitter
Tab = Collector
Features




International Standard Packages
Optimized for 10-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
Anti-Parallel Ultra Fast Diode
High Current Handling Capability
Advantages


High Power Density
Low Gate Drive Requirement
Applications
V
3.5
G
C
E
±100
nA
1.85
V
V








Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100633(10/14)
IXYK100N65B3D1
IXYX100N65B3D1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
IC = 60A, VCE = 10V, Note 1
30
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
55
S
4740
470
103
pF
pF
pF
168
30
78
nC
nC
nC
29
37
1.27
150
73
1.37
ns
ns
mJ
ns
ns
mJ
IC = 100A, VGE = 15V, VCE = 0.5 • VCES
Inductive load, TJ = 25°C
IC = 50A, VGE = 15V
VCE = 400V, RG = 3
Note 2
Inductive load, TJ = 150°C
IC = 50A, VGE = 15V
VCE = 400V, RG = 3
Note 2
RthJC
RthCS
TO-264 Outline
2.00
28
37
2.35
198
160
2.16
ns
ns
mJ
ns
ns
mJ
0.15
0.18 °C/W
°C/W
Terminals:
1 = Gate
2,4 = Collector
3 = Emitter
PLUS247TM Outline
Reverse Diode (FRED)
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
VF
IF = 100A, VGE = 0V, Note 1
IRM
IF = 100A, VGE = 0V, TJ = 150C,
-diF/dt = 700A/sVR = 400V
trr
TJ = 150C
1.7
1.4
2.7
V
V
45
A
156
ns
Terminals:
1 - Gate
2 - Collector
3 - Emitter
0.36 C/W
RthJC
Dim.
Notes:
1. Pulse test, t  300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYK100N65B3D1
IXYX100N65B3D1
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
140
VGE = 15V
13V
12V
11V
120
VGE = 15V
13V
300
10V
12V
250
11V
200
80
I C (A)
I C (A)
100
9V
60
40
8V
20
7V
0
10V
150
100
9V
50
8V
7V
0
0
0.5
1
1.5
2
2.5
3
0
2
4
6
140
1.8
VGE = 15V
13V
12V
11V
14
16
18
150
175
VGE = 15V
10V
I C = 140A
VCE(sat) - Normalized
9V
I C (A)
12
1.6
100
80
8V
60
40
7V
20
1.4
1.2
I C = 70A
1.0
0.8
I C = 35A
6V
0
0.6
0
0.5
1
1.5
2
2.5
3
3.5
-50
-25
0
VCE - Volts
25
50
75
100
125
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
5.0
4.5
Fig. 6. Input Admittance
160
TJ = 25ºC
140
4.0
120
3.5
100
3.0
I C (A)
VCE (V)
10
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
120
8
VCE - Volts
VCE - Volts
I C = 140A
2.5
80
TJ = 150ºC
25ºC
- 40ºC
60
2.0
70A
40
1.5
20
35A
1.0
0.5
0
7
8
9
10
11
12
VGE (V)
© 2014 IXYS CORPORATION, All Rights Reserved
13
14
15
4
5
6
7
VGE (V)
8
9
10
IXYK100N65B3D1
IXYX100N65B3D1
Fig. 7. Transconductance
Fig. 8. Gate Charge
90
16
TJ = - 40ºC
80
I C = 70A
25ºC
70
I G = 10mA
12
60
10
V GE (V)
150ºC
g f s (S)
VCE = 325V
14
50
40
8
6
30
4
20
2
10
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
I C (A)
QG (nC)
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
180
10,000
200
Cies
I C (A)
Capacitance (pF)
160
1,000
Coes
120
80
100
Cres
TJ = 150ºC
40
RG = 3Ω
dv / dt < 10V / ns
f = 1 MHz
10
0
0
5
10
15
20
25
30
35
40
100
200
300
400
500
600
700
VCE (V)
VCE (V)
Fig. 11. Forward-Bias Safe Operating Area
Fig. 12. Maximum Transient Thermal Impedance (IGBT)
1000
1
VCE(sat) Limit
I D (A)
25µs
100µs
10
Z(th)JC - ºC / W
100
1ms
1
0.1
0.01
TJ = 175ºC
TC = 25ºC
Single Pulse
10ms
DC
0.1
1
10
100
1000
VDS (V)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
0.1
1
IXYK100N65B3D1
IXYX100N65B3D1
7
Eoff
6
Eon -
---
TJ = 150ºC , VGE = 15V
VCE = 400V
5
Eoff (mJ)
12
6
10
5
8
4
6
2
I C = 50A
1
0
3
6
9
12
15
18
21
24
27
30
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
Eoff
2
2
1
0
0
5
4
TJ = 150ºC
3
2
TJ = 25ºC
55
60
1
65
70
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff
6
Eon
----
RG = 3Ω , VGE = 15V
VCE = 400V
5
7
240
6
220
80
85
90
95
0
100
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
tfi
800
td(off) - - - -
700
TJ = 150ºC, VGE = 15V
VCE = 400V
200
5
I C = 100A
600
3
3
2
2
500
160
400
I C = 50A
140
300
I C = 100A
120
t d(off) (ns)
4
t f i (ns)
180
4
E on (mJ)
E off (mJ)
75
I C (A)
RG (Ω)
7
6
VCE = 400V
50
33
----
RG = 3Ω , VGE = 15V
3
4
Eon
7
Eon (mJ)
3
7
Eon (mJ)
I C = 100A
4
14
E off (mJ)
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
200
I C = 50A
1
0
25
50
75
100
125
1
100
0
150
80
100
0
3
6
9
12
15
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
tfi
200
td(off) - - - -
RG = 3Ω , VGE = 15V
180
220
200
200
120
160
100
150
80
140
TJ = 25ºC
40
55
60
65
70
75
30
33
80
85
I C (A)
© 2014 IXYS CORPORATION, All Rights Reserved
90
95
tfi
td(off) - - - -
220
210
200
VCE = 400V
I C = 50A
190
140
180
120
170
I C = 100A
100
160
80
150
60
140
130
40
130
120
100
20
25
50
75
100
TJ (ºC)
125
120
150
t d(off) (ns)
170
t d(off) (ns)
TJ = 150ºC
50
27
RG = 3Ω , VGE = 15V
160
180
60
24
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
180
t f i (ns)
160
t f i (ns)
210
190
VCE = 400V
140
21
RG (Ω)
TJ (ºC)
220
18
IXYK100N65B3D1
IXYX100N65B3D1
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
240
tri
200
180
140
150
120
Fig. 20. Inductive Turn-on Switching Times vs.
Collector Current
tri
td(on) - - - -
TJ = 150ºC, VGE = 15V
td(on) - - - 36
RG = 3Ω , VGE = 15V
VCE = 400V
VCE = 400V
120
90
I C = 100A
80
100
t r i (ns)
120
34
80
32
TJ = 25ºC
60
60
t d(on) (ns)
160
t d(on) (ns)
t r i (ns)
38
30
TJ = 150ºC
I C = 50A
40
0
3
6
9
12
15
18
21
24
27
30
30
40
0
20
28
50
33
55
60
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
140
tri
120
VCE = 400V
td(on) - - - -
26
100
70
30
60
I C (A)
60
t d(on) (ns)
t r i (ns)
95
80
34
50
40
TC = 75ºC
VCE = 400V
28
I C = 50A
26
0
100
125
24
150
TJ (ºC)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Triangular Wave
TJ = 150ºC
40
30
75
90
90
38
32
50
85
Fig. 22. Maximum Peak Load Current vs. Frequency
80
25
80
36
I C = 100A
20
75
100
40
RG = 3Ω , VGE = 15V
100
70
I C (A)
RG (Ω)
160
65
20
VGE = 15V
10
RG = 3Ω
D = 0.5
Square Wave
0
10
100
fmax (kH)
1,000
IXYK100N65B3D1
IXYX100N65B3D1
Fig. 23. Diode Forward Characteristics
Fig. 24. Reverse Recovery Charge vs. -diF/dt
200
3.8
180
3.6
160
3.4
140
3.2
QRR (µC)
I F (A)
120
TJ = 150ºC
100
80
TJ = 25ºC
60
IF = 100A
TJ = 150ºC
75A
VR = 400V
50A
3.0
2.8
2.6
2.4
40
2.2
20
2.0
1.8
0
0
0.5
1
1.5
2
2.5
200
3
300
400
500
600
700
800
900
1000
-diF/ dt (A/µs)
VF (V)
Fig. 26. Reverse Recovery Time vs. -diF/dt
Fig. 25. Reverse Recovery Current vs. -diF/dt
210
50
IF = 100A
TJ = 150ºC
45
75A
TJ = 150ºC
200
VR = 400V
50A
VR = 400V
190
40
tRR (ns)
I RR (A)
180
35
30
170
IF = 100A
160
25
75A
150
20
50A
140
15
130
200
300
400
500
600
700
800
900
200
1000
300
400
500
Fig. 27. Dynamic Parameters QRR, IRR vs.
Junction Temperature
1.2
600
700
800
900
1000
-diF/dt (A/µs)
diF/dt (A/µs)
Fig. 28. Maximum Transient Thermal Impedance (Diode)
1
VR = 400V
1
I F = 100A
-dIF/dt = 700A/µs
Z (th)JC (ºC / W)
KF
0.8
0.6
0.4
0.1
KF IRR
0.2
KF QRR
0
0
20
40
60
80
100
TJ (ºC)
© 2014 IXYS CORPORATION, All Rights Reserved
120
140
160
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
IXYS REF: IXY_100N65B3(7D-Y42) 10-14-14