BC847PN Complementary Transistor(PNP and NPN) SOT-363 Features Epitaxial Die Construction Two internal isolated NPN/PNP Transistors in one package MAKING: 7P MAXIMUM RATINGS TR1 (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6 V IC Collector Current –Continuous 0.1 A PC* Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Dimensions in inches and (millimeters) CHARACTERISTICS of TR1 (NPN Transistor) (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=1μA,IC=0 6 V Collector cut-off current ICBO VCB=30V,IE=0 15 nA Emitter cut-off current IEBO VEB=5V,IC=0 15 nA DC current gain hFE VCE=5V,IC=2mA 200 450 VCE(sat) IC=10mA,IB=0.5mA 0.25 V VCE(sat) IC=100mA,IB=5mA 0.6 V VBE(sat) IC=10mA,IB=0.5mA 0.7 V VBE(sat) IC=100mA,IB=5mA 0.9 V VBE(on) VCE=5V,IC=2mA VBE(on) Collector-emitter saturation voltage Base-emitter saturation voltage 0.58 0.7 V VCE=5V,IC=10mA 0.72 V VCB=10V,IE=0,f=1MHz 6.0 pF Base-emitter voltage Collector output capacitance Transition frequency Noise figure Cob fT NF VCE=5V,IC=10mA,f=100MHz VCE=5V,Ic=0.2mA, f=1kHz,Rg=2KΩ,∆f=200Hz 100 MHz 10 dB BC847PN Complementary Transistor(PNP and NPN) MAXIMUM RATINGS TR2 (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -0.1 A PC* Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ CHARACTERISTICS of TR2 (PNP Transistor) (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-1μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -15 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -15 nA DC current gain hFE1 VCE=-5V,IC=-2mA 475 VCE(sat) IC=-10mA,IB=-0.5mA -0.3 V VCE(sat) IC=-100mA,IB=-5mA -0.65 V VBE(sat) IC=-10mA,IB=-0.5mA VBE(sat) IC=-100mA,IB=-5mA VBE(on) VCE=-5V,IC=-2mA VBE(on) VCE=-5V,IC=-10mA Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collector output capacitance 220 Cob Transition frequency fT Noise figure NF -0.7 -0.6 VCB=-10V,IE=0,f=1MHz VCE=-5V,IC=-10mA,f=100MHz VCE=-5V,Ic=-0.2mA, f=1kHz,Rg=2KΩ, ∆f=200Hz V -0.95 V -0.75 V -0.82 V 4.5 pF 100 MHz 10 dB BC847PN Complementary Transistor(PNP and NPN) Typical Characteristics BC847PN Complementary Transistor(PNP and NPN) 4