MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1 TYPE NAME 0. 1 High power gain Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz LOT No. 0.8 MIN 2.5+/-0.1 FEATURES 1.5+/-0.1 1.6+/-0.1 3.9+/-0.3 DESCRIPTION 1 2 1.5+/-0.1 3 0.4 +0.03 -0.05 1.5+/-0.1 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 APPLICATION 0.1 MAX For output stage of high power amplifiers in HF Band mobile radio sets. Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm RoHS COMPLIANT RD00HHS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V V ±10 Tc=25°C 3.1 W mW Zg=Zl=50Ω 10 mA 200 °C 150 -40 to +125 °C °C/W Junction to case 40 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS Vth Pout ηD Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=4mW, f=30MHz,Idq=50mA MIN 1 0.3 55 LIMITS TYP MAX. 25 1 2 3 0.7 65 - UNIT uA uA V W % Note : Above parameters , ratings , limits and conditions are subject to change. RD00HHS1 MITSUBISHI ELECTRIC 1/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 4 Vgs-Ids CHARACTERISTICS 0.6 CHANNEL DISSIPATION Pch(W) *1:The material of the PCB Glass epoxy (t=0.6 mm) 3 0.4 Ids(A) On PCB(*1) with Heat-sink 2 0.3 0.2 1 0.1 On PCB(*1) 0.0 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Vds-Ids CHARACTERISTICS 1 2 3 Vgs(V) 4 5 Vds VS. Ciss CHARACTERISTICS 1.4 20 Ta=+25°C Ta=+25°C f=1MHz Vgs=10V Vgs=9V Vgs=8V Vgs=7V 1.0 Vgs=6V 0.8 0.6 Vgs=5V 0.4 15 Ciss(pF) 1.2 Ids(A) Ta=+25°C Vds=10V 0.5 10 5 Vgs=4V 0.2 Vgs=3V 0 0.0 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 15 20 4 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 3 Crss(pF) 15 Coss(pF) 10 Vds(V) Vds VS. Crss CHARACTERISTICS 20 10 2 5 1 0 0 0 RD00HHS1 5 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 2/6 5 10 Vds(V) 15 20 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS Po 20 40 ηｄ Ta=+25°C f=30MHz Vdd=12.5V Idq=50mA 15 10 -20 -15 -10 -5 0 Pin(dBm) 5 Pout(W) , Idd(A) 60 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 25 90 1.0 80 Gp ηd 0.8 70 0.6 0.4 20 0.2 0 0.0 Idd Vdd-Po CHARACTERISTICS 0.6 0.4 40 Po 4 6 Pin(mW) 8 10 +25°C Vds=10V Tc=-25~+75°C +75°C 0.4 80 Idd 50 -25°C 0.5 Ids(A) Po(W) 0.8 60 Vgs-Ids CHARACTORISTICS 2 Idd(mA) Ta=25°C f=30MHz Pin=4mW Icq=50mA Zg=ZI=50 ohm 2 0.6 120 1.0 Ta=25°C f=30MHz Vdd=12.5V Idq=50mA 40 0 10 1.2 80 ηd(%) Po 30 100 1.2 100 35 0.3 0.2 0.1 0.2 0 0.0 2 4 6 8 10 Vdd(V) 12 0.0 14 0 1 2 3 Vgs(V) 4 5 Vgs-gm CHARACTORISTICS 0.6 Vds=10V Tc=-25~+75°C 0.5 gm(S) 0.4 -25°C 0.3 +25°C 0.2 +75°C 0.1 0.0 0 RD00HHS1 1 2 3 Vgs(V) 4 5 MITSUBISHI ELECTRIC 3/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W TEST CIRCUIT(f=30MHz) V gg V dd 330uF,50V 10uF,50V C2 C1 180pF L4 82pF 4m m 3m m 13m m 7m m 9m m 9m m 7m m 2.5m m RF-OUT RD00HHS 1 1k OHM RF-IN 8m m 22m m L3 6m m L1 470pF L2 40pF 220pF 14m m 7.5m m 15OHM 15pF 470pF 40pF 10pF L1:LA L04NAR27(0.27m H) L2:LA L04NA R39(0.39uH) L3:LA L04NA R39(0.39uH) Note:B oard m aterial-glas s epox i s ubs trate M ic ro s trip line width=1.0m m /50OHM ,er:4.8,t=0.6m m L4:LAL04NA 1R0(1uH) C1,C2:100pF,0.022uF,0.1uF in parallel RD00HHS1 MITSUBISHI ELECTRIC 4/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 RD00HHS1 S11 (mag) 1.002 1.003 1.005 1.007 0.989 0.963 0.936 0.911 0.892 0.872 0.857 0.846 0.834 0.830 0.826 0.821 0.815 0.812 0.814 0.816 0.811 0.814 S21 (ang) -3.6 -9.9 -16.8 -33.5 -49.8 -64.0 -76.9 -87.9 -97.7 -106.2 -113.7 -120.1 -126.0 -131.0 -135.9 -140.2 -144.0 -147.5 -151.0 -153.9 -156.8 -159.5 (mag) 12.533 12.631 12.784 12.820 12.355 11.571 10.697 9.791 8.972 8.202 7.533 6.921 6.386 5.894 5.484 5.097 4.749 4.443 4.167 3.904 3.670 3.471 S12 (ang) 178.3 174.6 170.6 159.1 147.5 136.8 127.3 119.1 111.4 104.9 98.9 93.4 88.4 83.7 79.3 75.1 71.0 67.3 63.8 60.1 56.8 53.7 (mag) 0.003 0.008 0.013 0.025 0.035 0.042 0.048 0.053 0.055 0.057 0.058 0.058 0.059 0.058 0.057 0.056 0.055 0.053 0.051 0.049 0.048 0.046 MITSUBISHI ELECTRIC 5/6 S22 (ang) 90.3 82.8 79.5 67.4 56.5 47.5 38.2 30.6 24.6 18.5 13.1 8.7 4.7 0.2 -2.8 -6.9 -9.8 -13.0 -15.0 -17.6 -20.8 -22.2 (mag) 0.920 0.919 0.918 0.898 0.866 0.824 0.781 0.745 0.711 0.685 0.665 0.649 0.640 0.630 0.625 0.623 0.623 0.623 0.627 0.630 0.634 0.640 (ang) -2.7 -6.9 -11.2 -22.4 -32.8 -42.2 -50.4 -57.9 -64.6 -70.2 -75.5 -80.5 -85.2 -89.2 -93.3 -97.1 -100.7 -104.3 -107.7 -110.9 -113.9 -117.1 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD00HHS1 MITSUBISHI ELECTRIC 6/6 10 Jan 2006