MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. 4.4+/-0.1 TYPE NAME High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz φ 1 2 3.9+/-0.3 LOT No. 0.8 MIN 2.5+/-0.1 FEATURES 1.5+/-0.1 1.6+/-0.1 1 0. 3 1.5+/-0.1 0.4 +0.03 -0.05 1.5+/-0.1 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 APPLICATION 0.1 MAX For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm RoHS COMPLIANT RD00HVS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to case RATINGS 30 +/-10 3.1 20 200 150 -40 to +125 40 UNIT V V W mW mA °C °C °C/W Note : Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25deg.C , UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS Vth Pout ηD Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=5mW, f=175MHz,Idq=50mA MIN 1 0.5 50 LIMITS TYP MAX. 25 1 2 3 0.8 60 - UNIT uA uA V W % Note : Above parameters , ratings , limits and conditions are subject to change. RD00HVS1 MITSUBISHI ELECTRIC 1/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE 3 *1:The material of the PCB Glass epoxy (t=0.6 mm) 0.8 On PCB(*1) with Heat-sink 0.6 Ids(A) CHANNEL DISSIPATION Pch(W) 4 Vgs-Ids CHARACTERISTICS 1.0 2 1 0.4 0.2 On PCB(*1) 0 0.0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS Ta=+25°C Ids(A) Vgs=6V Vgs=5V Ciss(pF) Vgs=10V Vgs=9V Vgs=8V Vgs=7V 1 0.5 Vgs=4V Vgs=3V 0 0 2 4 6 Vds(V) 8 20 18 16 14 12 10 8 6 4 2 0 4 5 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 4 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 3 Crss(pF) Coss(pF) 2 3 Vgs(V) Ta=+25°C f=1MHz 0 10 Vds VS. Coss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 1 Vds VS. Ciss CHARACTERISTICS 1.5 2 1 0 0 RD00HVS1 Ta=+25°C Vds=10V 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 2/6 5 10 Vds(V) 15 20 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS 90 25 80 20 70 ηｄ 50 Ta=+25°C f=175MHz Vdd=12.5V Idq=50mA 5 0 -15 -10 -5 0 5 Pin(dBm) 10 100 0.8 0.6 60 0.4 40 0.2 30 0.0 Idd 90 1.2 80 1.0 70 20 60 ηｄ 50 Ta=+25°C f=520MHz Vdd=12.5V Idq=50mA 5 0 -15 -10 -5 0 5 Pin(dBm) 10 Pout(W) , Idd(A) Po(dBm) , Gp(dB) , Idd(A) Gp ηd(%) Po 10 30 0.0 60 0 5 10 Pin(mW) 15 20 1.2 Po(W) Idd 1.0 0.4 80 0.2 40 0 0.0 280 Po 240 200 0.8 120 14 320 Ta=25°C f=520MHz Pin=15mW Idq=50mA Zg=ZI=50 ohm 1.4 Idd(mA) Po(W) 80 20 1.6 0.6 0 RD00HVS1 100 40 0 200 12 Ta=25°C f=520MHz Vdd=12.5V Idq=50mA 0.4 0.2 240 Po 8 10 Vdd(V) 120 ηd 0.6 40 160 6 20 Vdd-Po CHARACTERISTICS 0.8 4 15 Idd 280 1 20 140 0.8 15 1.4 1.2 10 Pin(mW) Po Vdd-Po CHARACTERISTICS Ta=25°C f=175MHz Pin=5mW Idq=50mA Zg=ZI=50 ohm 5 1.4 100 15 40 Pin-Po CHARACTERISTICS 35 25 Ta=25°C f=175MHz Vdd=12.5V Idq=50mA 0 0 15 Pin-Po CHARACTERISTICS 30 80 ηd ηd(%) 10 60 1.0 160 Idd 0.6 120 0.4 80 0.2 40 Idd(mA) 15 120 Po ηd(%) Po Pout(W) , Idd(A) Gp ηd(%) Po(dBm) , Gp(dB) , Idd(A) 30 1.2 100 35 0 4 MITSUBISHI ELECTRIC 3/6 6 8 10 Vdd(V) 12 14 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W TEST CIRCUIT(f=175MHz) Vgg V dd C2 C1 18.0m m 18.0m m RD 00HV S1 4.7kO HM 4m m RF-in 2m m 19.5m m 10.5m m L1 180pF 4m m 4.5m m L4 4m m 6.5m m 20.5m m 5m m 270O HM 18pF 15m m L3 L2 10pF 10uF,50V 3pF 4.0m m 250pF R F-out 18pF 240pF L1: Enam eled wire 4Turns,D:0.43m m ,2.46m m O .D L2:LQ G 11A68N(68nH,m urata) L3: Enam eled wire 9Turns,D:0.43m m ,2.46m m O .D L4: Enam eled wire 7Turns,D:0.43m m ,2.46m m O .D C 1,C2:1000pF,0.022uF in parallel Note:Board m aterial-glass epoxi substrate Micro strip line width=1.0m m /50 O HM,er:4.8,t=0.6m m TEST CIRCUIT(f=520MHz) Vgg Vdd C1 C2 W 19mm W 19mm RD00HVS1 520MHz 4.7kOHM 34.5nH 0.6mm 8.5mm 4mm 7.7mm 3.2mm 6mm 10.8nH 1.2mm 25.8mm 15mm RF-out 2.5mm RF-in 190pF 62pF 6.6nH 18pF 15pF 18.1nH 10pF 24pF Note: Board material- Glass epoxy copper-clad laminates FR-4 Micro strip line width=1mm,50 OHM, er:4.8, t=0.6mm RD00HVS1 5pF 22pF 10pF 3pF 7pF C1,C2:1000pF,0.022uF in parallel W:Line width=1.0mm MITSUBISHI ELECTRIC 4/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W RD00HVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=50mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 1.004 0.987 0.972 0.957 0.929 0.898 0.875 0.857 0.844 0.831 0.824 0.815 0.810 0.809 0.807 0.806 0.808 0.808 0.810 0.811 0.814 0.817 (ang) -35.2 -51.9 -59.7 -67.1 -80.1 -91.5 -101.4 -110.0 -117.3 -124.1 -130.0 -135.0 -139.9 -144.1 -148.1 -151.8 -155.1 -158.0 -161.1 -163.9 -166.5 -168.9 S21 (mag) (ang) 13.480 158.7 12.911 147.1 12.500 141.6 12.035 136.2 11.030 126.6 10.055 118.7 9.157 111.3 8.322 104.9 7.642 99.3 6.991 93.9 6.432 89.5 5.963 84.9 5.480 80.7 5.103 77.0 4.769 73.1 4.420 69.9 4.161 66.8 3.900 63.1 3.639 60.3 3.466 57.7 3.254 54.1 3.045 51.9 S12 (mag) 0.027 0.039 0.043 0.048 0.054 0.058 0.060 0.062 0.063 0.063 0.064 0.063 0.062 0.061 0.060 0.058 0.056 0.054 0.053 0.051 0.048 0.046 S22 (ang) 66.7 56.1 50.7 45.6 37.5 30.2 23.7 18.2 13.3 8.5 4.8 1.1 -2.3 -5.4 -8.6 -11.0 -13.5 -16.2 -17.8 -20.0 -22.1 -23.5 (mag) 0.928 0.889 0.865 0.843 0.796 0.754 0.716 0.688 0.668 0.652 0.640 0.633 0.627 0.626 0.625 0.627 0.630 0.634 0.639 0.645 0.654 0.661 (ang) -24.7 -36.5 -42.0 -47.2 -56.4 -64.4 -71.5 -77.6 -83.4 -88.7 -93.3 -97.9 -102.1 -105.9 -109.6 -113.4 -116.8 -120.0 -123.3 -126.4 -129.3 -132.1 RD00HVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 RD00HVS1 S11 (mag) 1.005 0.995 0.980 0.967 0.943 0.916 0.891 0.877 0.862 0.852 0.844 0.835 0.828 0.824 0.823 0.820 0.821 0.822 0.823 0.822 0.826 0.828 (ang) -33.4 -49.7 -57.5 -64.6 -77.5 -88.9 -98.7 -107.6 -115.0 -121.9 -128.1 -133.3 -138.3 -142.7 -146.8 -150.6 -153.9 -157.2 -160.2 -163.1 -165.9 -168.4 S21 (mag) (ang) 13.343 160.0 12.874 149.0 12.525 143.6 12.108 138.3 11.193 129.0 10.249 121.2 9.403 113.9 8.582 107.3 7.916 101.9 7.273 96.4 6.706 91.9 6.224 87.3 5.755 83.0 5.358 79.3 5.024 75.4 4.671 72.0 4.398 68.9 4.134 65.2 3.853 62.3 3.677 59.7 3.459 56.3 3.241 53.9 S12 (mag) 0.024 0.034 0.038 0.042 0.047 0.052 0.054 0.056 0.057 0.057 0.057 0.058 0.056 0.056 0.054 0.053 0.051 0.050 0.048 0.047 0.044 0.042 MITSUBISHI ELECTRIC 5/6 S22 (ang) 68.3 57.9 53.2 47.8 39.3 32.3 26.2 20.6 15.7 11.2 7.5 3.4 0.2 -2.5 -5.8 -8.4 -10.5 -13.3 -15.2 -17.2 -19.5 -20.2 (mag) 0.898 0.865 0.845 0.826 0.781 0.743 0.709 0.681 0.661 0.644 0.633 0.625 0.619 0.618 0.616 0.615 0.618 0.622 0.628 0.633 0.640 0.646 (ang) -22.6 -33.1 -38.0 -42.9 -51.3 -58.9 -65.6 -71.5 -77.0 -82.0 -86.6 -91.2 -95.2 -99.0 -102.9 -106.6 -110.1 -113.2 -116.5 -119.8 -122.9 -125.7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD00HVS1 MITSUBISHI ELECTRIC 6/6 10 Jan 2006