VDS 1200 V ID @ 25˚C 90 A CPM2-1200-0025B Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 25 mΩ N-Channel Enhancement Mode Features • • • • • • • Chip Outline New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits • • • • Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequencyy Applications • • • • • • Solar Inverters Switch Mode Power Supplies High Voltage DC/DC converters Battery Chargers Motor Drive Pulsed Power Applications Part Number Die Size (mm) CPM2-1200-0025B 4.04 x 6.44 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Unit Test Conditions VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current ID(pulse) Pulsed Drain Current TJ , Tstg Operating Junction and Storage Temperature TL TProc 90 60 A VGS =20 V, TC = 25˚C VGS =20 V, TC = 100˚C 250 A -55 to +150 ˚C Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Maximum Processing Temperature 325 ˚C 10 min. maximum Note (1): Assumes a RθJC < 0.27 K/W 1 Value CPM2-1200-0025B Rev. B Pulse width tP limited by Tjmax Note Note 1 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. Max. Unit 1200 VGS = 0 V, ID = 100 μA 3.0 V VDS = 10 V, ID = 12.5mA 1.8 2.0 V VDS = 10 V, ID = 12.5mA,TJ = 150 °C 100 μA VDS = 1200 V, VGS = 0 V 600 nA VGS = 20 V, VDS = 0 V 2 25 Drain-Source On-State Resistance 34 mΩ 43 23.6 Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Eoss Coss Stored Energy 121 μJ EAS Avalanche Energy, Single Pluse 3.5 J EON Turn-On Switching Energy 1.4 EOFF Turn Off Switching Energy 0.3 td(on) Turn-On Delay Time 14 Rise Time 32 Turn-Off Delay Time 29 Fall Time 28 Internal Gate Resistance 1.1 Qgs Gate to Source Charge 46 Qgd Gate to Drain Charge 50 Qg Total Gate Charge td(off) tf RG(int) Note 2.4 gfs tr Test Conditions V S 21.7 2788 VGS = 20 V, ID = 50 A VGS = 20 V, ID = 50 A, TJ = 150 °C VDS= 20 V, IDS= 50 A VDS= 20 V, IDS= 50 A, TJ = 150 °C VGS = 0 V 220 pF 15 VDS = 1000 V Fig. 11 Fig. 4,5,6 Fig. 7 Fig. 17,18 f = 1 MHz 161 VAC = 25 mV Fig 16 ID = 50A, VDD = 50V mJ VDS = 800 V, VGS = -5/20 V, ID = 50A, RG(ext) = 2.5Ω,L= 412 μH ns VDD = 800 V, VGS = -5/20 V ID = 50 A, RG(ext) = 2.5 Ω, RL = 16 Ω Timing relative to VDS Per IEC60747-8-4 pg 83 Ω f = 1 MHz, VAC = 25 mV, ESR of CISS nC VDS = 800 V, VGS = -5/20 V ID = 50 A Per IEC60747-8-4 pg 83 Fig. 12 Reverse Diode Characteristics Symbol VSD Parameter Diode Forward Voltage IS Continuous Diode Forward Current trr Reverse Recovery Time Qrr Irrm Typ. Max. Unit Test Conditions 3.3 V VGS = - 5 V, ISD = 25 A 3.1 V VGS = - 5 V, ISD = 25 A, TJ = 150 °C 90 45 ns Reverse Recovery Charge 406 nC Peak Reverse Recovery Current 13.5 A Note 2 VGS = - 5 V, ISD = 50 A ,TJ = 25 °C VR = 800 V dif/dt = 1000 A/µs Note 2 Note (2): When using SiC Body Diode the maximum recommended VGS = -5V 2 Thermal Resistance from Junction to Ambient CPM2-1200-0025B Rev. B 40 Fig. 8, 9, 10 TC= 25 °C Note (3): For inductive and resistive switching data and waveforms please refer to datasheet for packaged device. Thermal Characteristics Part number C2M0025120D. RθJC Note Typical Performance 150 150 VGS = 20 V Conditions: TJ = -55 °C tp < 200 µs 120 VGS = 18 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 120 VGS = 14 V 90 VGS = 12 V 60 VGS = 10 V 30 2.5 5.0 7.5 VGS = 18 V VGS = 16 V VGS = 12 V VGS = 10 V 60 30 0 10.0 0.0 2.5 Drain-Source Voltage, VDS (V) 7.5 10.0 Figure 2. Output Characteristics TJ = 25 °C 1.8 Conditions: TJ = 150 °C tp < 200 µs VGS = 16 V On Resistance, RDS On (P.U.) VGS = 18 V VGS = 20 V Conditions: IDS = 50 A VGS = 20 V tp < 200 µs 1.6 VGS = 14 V 120 Drain-Source Current, IDS (A) 5.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 °C 150 VGS = 14 V 90 0 0.0 VGS = 20 V Conditions: TJ = 25 °C tp < 200 µs VGS = 16 V VGS = 12 V 90 VGS = 10 V 60 30 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 0.0 2.5 5.0 7.5 -50 10.0 -25 0 80 60 Conditions: VGS = 20 V tp < 200 µs On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) TJ = 150 °C 50 40 TJ = 25 °C 30 TJ = -55 °C 20 10 0 100 125 150 40 VGS = 14 V 30 VGS = 16 V VGS = 18 V VGS = 20 V 20 10 0 0 30 60 90 120 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 75 Conditions: IDS = 50 A tp < 200 µs 50 60 50 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 150 °C 70 25 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) CPM2-1200-0025B Rev. B 150 -50 -25 0 25 50 75 100 125 Junction Temperature, TJ (°C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 150 Typical Performance 100 -5 Conditions: VDS = 20 V tp < 200 µs -4 -2 -1 VGS = 0 V Drain-Source Current, IDS (A) TJ = 150 °C 60 TJ = 25 °C 40 TJ = -55 °C 20 0 0 Condition: TJ = -55 °C tp < 200 µs VGS = -5 V 80 Drain-Source Current, IDS (A) -3 -20 -40 VGS = -2 V -60 -80 0 0 2 4 6 8 10 12 14 -100 Gate-Source Voltage, VGS (V) Drain-Source Voltage, VDS (A) Figure 7. Transfer Characteristic For Various Junction Temperatures -5 -4 -3 -2 Figure 8. Body Diode Characteristic at -55 ºC -1 0 Condition: TJ = 25 °C tp < 200 µs VGS = -5 V -5 -4 -3 0 -60 -80 0 Condition: TJ = 150 °C tp < 200 µs VGS = 0 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) -40 VGS = -2 V -1 VGS = -5 V -20 VGS = 0 V -2 -20 -40 VGS = -2 V -60 -80 -100 -100 Drain-Source Voltage, VDS (A) Drain-Source Voltage, VDS (A) Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC 4.0 3.5 2.5 2.0 1.5 1.0 0.5 0.0 -25 0 25 50 75 100 125 Junction Temperature TJ (°C) Figure 11. Threshold Voltage vs. Temperature CPM2-1200-0025B Rev. B 150 Conditions: IDS = 50 A IGS = 100 mA VDS = 800 V TJ = 25 °C 20 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 3.0 4 25 Conditons VDS = 10 V IDS = 12.5 mA -50 0 15 10 5 0 -5 0 20 40 60 80 100 120 140 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristic 160 180 Typical Performance -5 -4 -3 -2 -1 0 -5 -4 -3 -2 -1 0 0 VGS = 0 V 0 Conditions: TJ = 25 °C tp < 200 µs VGS = 5 V Drain-Source Current, IDS (A) -20 -40 VGS = 10 V -60 VGS = 15 V -80 VGS = 0 V VGS = 5 V -20 Drain-Source Current, IDS (A) Conditions: TJ = -55 °C tp < 200 µs VGS = 10 V VGS = 15 V -40 -60 VGS = 20 V -80 VGS = 20 V -100 Drain-Source Voltage, VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -5 -4 -3 -2 -1 Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 150 0 Conditions: TJ = 150 °C tp < 200 µs VGS = 0 V VGS = 5 V VGS = 10 V VGS = 20 V -40 -60 Stored Energy, EOSS (µJ) 120 -20 VGS = 15 V Drain-Source Current, IDS (A) -100 Drain-Source Voltage, VDS (V) 90 60 30 -80 0 0 -100 Drain-Source Voltage, VDS (V) 200 400 Figure 15. 3rd Quadrant Characteristic at 150 ºC 1000 1200 10000 Ciss Ciss Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 1000 100 Crss 10 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz 1000 Capacitance (pF) Coss Capacitance (pF) 800 Figure 16. Output Capacitor Stored Energy 10000 Coss 100 Crss 10 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0-200 V) 5 600 Drain to Source Voltage, VDS (V) CPM2-1200-0025B Rev. B 200 1 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0-1000 V) 1000 Mechanical Parameters Parameter Typical Value Unit 4.04 x 6.44 mm 1.0 x 4.54 (x3) mm 0.50 x 0.80 mm 180 ± 40 µm Top Side Source metallization (Al) 4 µm Top Side Gate metallization (Al) 4 µm 0.8 / 0.6 µm Die Dimensions (L x W) Exposed Source Pad Metal Dimensions (LxW) Each Gate Pad Dimensions (L x W) Die Thickness Bottom Drain metallization (Ni/Ag) Chip Dimensions 6 CPM2-1200-0025B Rev. B Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • C2M PSPICE Models: www.cree.com/power SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 7 CPM2-1200-0025B Rev. B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power