STM8309 Green Product SamHop Microelectronics Corp. Oct.13, 2006 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) (N-Channel) PRODUCT SUMMARY VDSS ID 30V 7A RDS(ON) ( m Ω ) (P-Channel) PRODUCT SUMMARY Max VDSS ID -30V -6A RDS(ON) ( m Ω ) Max 35 @ VGS = -10V 23 @ VGS = 10V 30 @ VGS = 4.5V 52 @ VGS = -4.5V D1 D1 D2 D2 8 7 6 5 SO-8 1 1 2 3 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS 20 20 V ID 7 -6 A IDM 28 -24 A IS 1.7 -1.7 A a J=25 C Drain Current-Continuous @T b -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation a a PD Operating Junction and Storage Temperature Range TJ, TSTG 2.0 -55 to 150 W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M8309 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.9 3 V Drain-S ource On-S tate R esistance R DS (ON) V GS =10V, ID =7A 17 23 m ohm V GS =4.5V, ID =5A 23 30 m ohm OFF CHAR ACTE R IS TICS 30 V ON CHAR ACTE R IS TICS b V DS = 15V, V GS = 10V ID(ON) gFS On-S tate Drain Current Forward Transconductance 1.0 20 A 14 S 680 PF 190 PF 115 PF 12 ns 17.5 ns 41 ns 15 ns V DS =15V, ID =7A,V GS =10V 11 nC V DS =15V, ID =7A,V GS =4.5V 5.5 nC 1.7 nC 3.3 nC V DS = 10V, ID =7A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =15V, V GS = 0V f =1.0MH Z c V DD = 15V, ID = 7A, R L=2.1 ohm, V GS = 10V, R GEN = 6 ohm tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =15V, ID = 7A, V GS =10V 2 S T M8309 P-Channel ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted) Parameter Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1.9 -3 V Drain-S ource On-S tate R esistance R DS (ON) V GS =-10V, ID= -5A 29 35 m ohm V GS = -4.5V, ID= -4A 44 52 m ohm -30 V ON CHAR ACTE R IS TICS b ID(ON) gFS On-S tate Drain Current Forward Transconductance V DS = -15V, V GS = -10V -1 -20 A 8.5 S 870 PF 225 PF 125 PF 12 ns 18 ns 70 ns 40 ns V DS =-15V,ID=-5A,V GS =-10V 15 nC V DS =-15V,ID=-5A,V GS =-4.5V 7.5 nC V DS =-15V, ID = - 5A, V GS =-10V 1.7 nC 4.5 nC V DS = -15V, ID = - 5A DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =-15V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V D = -15V, R L=15 ohm, ID = -1A, V GE N = -10V, R GEN =6 ohm 3 S T M8309 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage C Min Typ Max Unit Condition Symbol b VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A VSD N-Ch P-Ch 1.2 -1.2 0.8 -0.8 5 Notes a.Surface Mounted on FR4 Board,tІ10sec. b.Pulse Test:Pulse WidthІ300Ӵs,Duty Cycle І 2%. c.Guaranteed by design,not subject to production testing. N-Channel 20 40 VGS=5V VGS=10V 16 ID, Drain Current (A) ID, Drain Current(A) VGS=4V VGS=4.5V 32 24 VGS=3.5V 16 VGS=3V 8 12 8 -55 C 4 0.5 1 1.5 2 2.5 0 3 0.7 VDS, Drain-to-Source Voltage (V) 2.1 2.8 3.5 4.2 Figure 2. Transfer Characteristics 60 R DS (ON) , On-R es is tance Normalized 1.5 50 R DS (on) (m Ω) 1.4 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 40 30 V G S =4.5V 20 V G S =10V 10 1 25 C Tj=125 C 0 0 0 1 8 16 24 32 1.4 V G S =10V I D =7A 1.3 1.2 V G S =4.5V I D =5A 1.1 1.0 0.9 -25 40 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 4 V F igure 4. On-R es is tance Variation with Drain C urrent and Temperature B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 49 20.0 I D =7A Is , S ource-drain current (A) 42 R DS (on) (m Ω) 6 V th, Normalized G ate-S ource T hres hold V oltage S T M8309 35 75 C 125 C 28 21 25 C 14 7 10.0 75 C 125 C 25 C 1.0 0 2 4 6 8 10 0.4 V G S , G ate-S ource Voltage (V ) 0.6 0.8 1.0 1.2 1.4 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T M8309 V G S , G ate to S ource V oltage (V ) 900 750 450 300 Coss 150 Crss V DS =15V I D =7A 8 6 4 2 0 0 0 5 10 15 20 25 0 30 2 6 4 8 10 12 14 16 VDS, Drain-to Source Voltage (V) Qg, T otal G ate C harge (nC ) F igure 8. C apacitance F igure 9. G ate C harge 40 250 Tr 100 60 T D(off) I D , Drain C urrent (A) S witching T ime (ns ) 6 C, Capacitance (pF) Ciss 600 10 Tf T D(on) 10 V DS =15V ,ID=7A 1 10 RD it 10m s ms 1s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.1 60 100 300 600 im 11 0.03 6 10 )L 100 V G S =10V 1 ON S( 1 10 30 50 R g, G ate R es is tance ( Ω) F igure 11.s witching characteris tics 6 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area S T M8309 P-Channel 20 VGS=10V VGS=5V -I D , Drain C urrent (A) 125 C VGS=4V 16 16 -I D , Drain C urrent (A) 20 VGS=4.5V 12 VGS=3.5V 8 VGS=3V 4 25 C 8 -55 C 4 0 0 0 0.5 1 1.5 2 2.5 0 3 0.9 1.8 2.7 3.6 4.5 5.4 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 1.5 R DS (ON) , On-R es is tance Normalized 90 75 R DS (on) (m Ω) 12 60 V G S =-4.5V 45 30 V G S =-10V V G S =-10V I D =-5A 1.3 1.2 V G S =-4.5V I D =-4A 1.1 1.0 15 1 1.4 1 4 8 12 16 0 20 25 50 75 100 125 150 T j( C ) T j, J unction T emperature ( C ) -I D , Drain C urrent (A) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 7 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature B V DS S , Normalized Drain-S ource B reakdown V oltage 1.2 V DS =V G S I D =-250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 1.3 I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 100 I D =-5A -Is , S ource-drain current (A) 90 R DS (on) (m Ω) 5 V th, Normalized G ate-S ource T hres hold V oltage S T M8309 80 60 125 C 40 0 25 C 75 C 20 10.0 125 C 25 C 75 C 1.0 0 2 4 6 8 0 10 -V G S , G ate- S ource Voltage (V ) 0.25 0.5 0.75 1.0 1.25 -V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T M8309 -V G S , G ate to S ource V oltage (V ) 1200 1000 C, Capacitance (pF) Ciss 6 800 600 400 Coss 200 Crss 5 10 15 20 25 6 4 2 30 2 0 4 6 8 10 12 14 VDS, Drain-to Source Voltage (V) Qg, T otal G ate C harge (nC ) F igure 8. C apacitance F igure 9. G ate C harge 16 50 250 100 60 -I D , Drain C urrent (A) Tr S witching T ime (ns ) V DS =-15 V I D =-5A 8 0 0 0 10 T D(off) Tf T D(on) 10 V D S = -15V,I D=-1A 1 10 RD 60 100 300 600 im it 10m 11 s ms 1s DC 0.1 V G S =-10V S ingle P ulse T A =25 C 0.03 6 10 )L 100 V G S = -10 V 1 ON S( 0.1 1 10 50 -V DS , B ody Diode F orward V oltage (V ) R g, G ate R es is tance ( Ω) F igure 11.s witching characteris tics 9 F igure 10. Maximum S afe O perating Area S T M8309 V DD ton V IN D 5 tf 90% 90% V OUT V OUT VG S RGE N toff td(off) tr td(on) RL INVE R TE D 10% 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 14. S witching Waveforms F igure 13. S witching T es t C ircuit N-C hannel 1 Thermal Resistance Normalized Transient 9 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve P-C hannel Thermal Resistance Normalized Transient 9 1 0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M8309 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45± e B 0.05 TYP. A1 0.008 TYP. 0.016 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± 11 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± STM8309 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:р PACKAGE SOP 8N 150п A0 6.40 B0 5.20 K0 D0 D1 2.10 ӿ1.5 (MIN) ӿ1.5 +0.1 - 0.0 W E E1 E2 P0 P1 P2 T 12.0 ²0.3 1.75 5.5²0.05 8.0 4.0 2.0²0.05 0.3²0.05 W1 H K S G R SO-8 Reel UNIT:р TAPE SIZE REEL SIZE M N 12 р ӿ330 330 ² 1 62 ²1.5 12.4+ 0.2 16.8- 0.4 12 ӿ12.75 + 0.15 2.0²0.15 V