Green Product STU/D650S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 75 @ VGS=10V 65V TO-252 and TO-251 Package. 16A 97 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM Limit Units Drain-Source Voltage 65 V Gate-Source Voltage ±20 V 16 A 12.8 A 49 A 25 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 °C/W 50 °C/W Drain Current-Continuous -Pulsed TC=25°C TC=70°C a b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a d THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Sep,23,2010 1 www.samhop.com.tw STU/D650S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=52V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Min Typ Max 65 Units V 1 uA ±100 nA 1.8 3 60 75 V m ohm VGS=4.5V , ID=7A VDS=10V , ID=8A 72 19 97 VDS=25V,VGS=0V f=1.0MHz 825 53 40 pF pF pF VDD=30V ID=1A VGS=10V RGEN= 6 ohm 17 14 ns ns 29 ns 11 ns VDS=30V,ID=8A,VGS=10V 13 nC VDS=30V,ID=8A,VGS=4.5V 6.5 nC VDS=30V,ID=8A, VGS=10V 1.7 nC 3.5 nC VDS=VGS , ID=250uA VGS=10V , ID=8A 1 m ohm S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A 0.78 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) Sep,23,2010 2 www.samhop.com.tw STU/D650S Ver 1.0 25 20 20 VGS=4V VGS=4.5V 15 VGS=3.5V 10 VGS=3V 5 16 Tj=125 C 12 8 0 2 1.5 1 0.5 2.5 0 3 3 4 5 6 V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 150 1.8 R DS(on), On-Resistance Normalized 2.0 120 90 V G S =4.5V 60 V G S =10V 30 V G S =10V I D =8A 1.6 1.4 V G S =4.5V I D =7A 1.2 1.0 1 10 5 15 20 0 25 0 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 2 1 VDS, Drain-to-Source Voltage(V) 180 1 -55 C 25 C 4 0 0 RDS(on)(m Ω) I D, Drain Current(A) ID, Drain Current(A) VGS=10V 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Sep,23,2010 3 www.samhop.com.tw STU/D650S Ver 1.0 20.0 180 Is, Source-drain current(A) I D =8A 150 RDS(on)(m Ω) 120 125 C 90 75 C 60 25 C 30 0 2 4 6 8 0.25 0.50 0.75 1.00 1.25 Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) C, Capacitance(pF) 0 VSD, Body Diode Forward Voltage(V) Ciss 800 600 400 200 Coss Crss 10 VDS=30V ID=8A 8 6 4 2 0 5 10 15 20 25 30 0 2 4 8 6 10 14 16 12 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 80 300 I D, Drain Current(A) 100 Switching Time(ns) 75 C V GS, Gate-to-Source Voltage(V) 1000 0 125 C 10 1200 0 5.0 1.0 0 25 C 10.0 TD(off ) TD(on) Tr Tf 10 10 RD S (O N) L im 10 it 1m 10 DC 0u s s ms 1 VGS=10V Single Pulse TA=25 C VDS=30V,ID=1A VGS=10V 0.1 1 1 10 100 0.1 1 10 65 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Sep,23,2010 4 www.samhop.com.tw STU/D650S Ver 1.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Sep,23,2010 5 www.samhop.com.tw STU/D650S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Sep,23,2010 6 www.samhop.com.tw STU/D650S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Sep,23,2010 7 www.samhop.com.tw STU/D650S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Sep,23,2010 8 www.samhop.com.tw