STM4880 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 17 @ VGS=10V 30V Suface Mount Package. 9.6A 26 @ VGS=4.5V ESD Protected. S O-8 1 D 5 4 G D 6 3 S D 7 2 S D 8 1 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM EAS -Pulsed Sigle Pulse Avalanche Energy d PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a Units V V TA=25°C Limit 30 ±20 9.6 TA=70°C 7.7 A 40 20 A mJ 2.5 W 1.6 W -55 to 150 °C 50 °C/W b a TA=25°C TA=70°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. A Jun,26,2008 1 www.samhop.com.tw STM4880 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge Conditions Min VGS=0V , ID=250uA 30 Typ VGS= ±20V , VDS=0V VGS=4.5V , ID=7.8A VDS=10V , ID=9.6A 1.0 1.8 13 19 15 Diode Forward Voltage uA 1 ±10 uA 3 17 V m ohm 26 m ohm S 655 176 107 pF pF pF 13 15 15 29 ns ns ns ns VDS=15V,ID=9.6A,VGS=10V 10.3 nC VDS=15V,ID=9.6A,VGS=4.5V 5.3 nC VDS=15V,ID=9.6A, VGS=10V 1.5 2.8 nC nC VDS=15V,VGS=0V f=1.0MHz c VDD=15V ID=9.6A VGS=10V RGEN=6 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Units V VDS=24V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=9.6A Max VGS=0V,IS=2A 0.78 1.7 A 1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,RG=25Ω,VDD=20V.(See Figure13) Jun,26,2008 2 www.samhop.com.tw STM4880 Ver 1.0 30 15 VGS=10V I D, Drain Current(A) 18 I D, Drain Current(A) VGS=4V 24 VGS=4.5V VGS=3.5V 12 6 VGS=3V 12 Tj=125 C 9 25 C 6 -55 C 3 0 0 0 0.5 1 1.5 2 2.5 0 3 V DS, Drain-to-Source Voltage(V) 1.4 2.1 2.8 3.5 4.2 V GS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics Figure 1. Output Characteristics 1.6 30 1.5 RDS(on), On-Resistance Normalized 25 RDS(on)(m Ω) 0.7 V G S =4.5V 20 15 V G S =10V 10 5 1 V G S =10V I D =9.6 A 1.4 1.3 1.2 V G S =4.5V I D =7.8 A 1.1 1.0 0.8 1 6 12 18 24 30 0 50 25 75 100 125 150 T j ( °C ) I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 V DS =V G S I D =250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jun,26,2008 3 www.samhop.com.tw STM4880 Ver 1.0 20.0 36 Is, Source-drain current(A) I D =9.6A R DS(on)(m Ω) 30 24 125 C 18 75 C 25 C 12 6 0 0 2 4 6 8 25 C 125 C 75 C 1.0 10 0.2 0.4 0.8 1.0 1.2 V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 750 Ciss 600 450 300 Coss 150 Crss 0 0 5 10 15 20 25 V DS =15V 8 I D =9. 6A 6 4 2 0 30 0 2 4 6 8 10 12 14 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 250 16 100 100 60 I D, Drain Current(A) Tr Switching Time(ns) 0.6 V GS, Gate-to-Source Voltage(V) 900 C, Capacitance(pF) 10.0 T D(off) Tf T D(on) 10 V DS =15V ,ID=9.6A 1 6 10 60 100 Rg, Gate Resistance(Ω) L im it 10 1m 0u s s ms 1s 1 0.05 0.1 300 600 R N) 10 0.1 V G S =10V 1 10 (O DS DC V G S =10V S ingle P uls e T A =25 C 1 10 30 70 V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jun,26,2008 4 www.samhop.com.tw STM4880 Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 1 Normalized Transient Thermal Resistance 0.5 0.2 0.1 0.1 0.05 0.02 P DM 0.01 0.01 t1 Single Pulse t2 1. 2. 3. 4. 0.001 0.0000 1 0.000 1 0.001 0.01 0. 1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 1000 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jun,26,2008 5 www.samhop.com.tw STM4880 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± B A1 e 0.008 TYP. 0.016 TYP. 0.05 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± Jun,26,2008 6 www.samhop.com.tw STM4880 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE SOP 8N 150п A0 6.50 ²0.15 B0 5.25 ²0.10 D0 K0 ӿ1.5 (MIN) 2.10 ²0.10 D1 E ӿ1.55 ²0.10 12.0 +0.3 - 0.1 E1 1.75 ²0.10 E2 P0 P1 P2 T 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 SO-8 Reel W1 S K V M N G R H W UNIT:р TAPE SIZE REEL SIZE M N W W1 H 12 р ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 K S G R V 2.0 ²0.15 Jun,26,2008 7 www.samhop.com.tw