Gre r Pro STU/D458S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON). PRODUCT SUMMARY VDSS RDS(ON) (m ) Max ID 8 40V Rugged and reliable. @VGS=10V TO-252 and TO-251 Package. 48A 11 @VGS=4.5V G G D S STU SERIES TO-252AA(D-PAK) S STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS VGS ID Drain Current-Continuous IDM EAS Limit Units Drain-Source Voltage 40 V Gate-Source Voltage ±20 V 48 A 39 A 147 A -Pulsed TC=25°C TC=70°C a b Single Pulse Avalanche Energy a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range d 93 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 °C/W 50 °C/W THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Mar,02,2011 1 www.samhop.com.tw STU/D458S Ver 1.0 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=32V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Min Typ Max 40 Units V 1 uA ±100 nA 6.2 3 8 m ohm VGS=4.5V , ID=19A 8.6 11 m ohm VDS=10V , ID=24A 100 S VDS=20V,VGS=0V f=1.0MHz 1360 240 200 pF pF pF VDD=20V ID=1A VGS=10V RGEN= 6 ohm 28 42 ns ns 64 ns 41 ns VDS=20V,ID=24A,VGS=10V 31 nC VDS=20V,ID=24A,VGS=4.5V 15.5 nC 2.8 nC 10 nC VDS=VGS , ID=250uA VGS=10V , ID=24A 1 1.9 V c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge c VDS=20V,ID=24A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=5A 0.77 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) Mar,02,2011 2 www.samhop.com.tw STU/D458S Ver 1.0 60 100 VGS=4V VGS=4.5V 80 ID, Drain Current(A) ID, Drain Current(A) VGS=10V 60 VGS=3.5V 40 20 36 Tj=125 C 24 0 2.0 1.5 1.0 0.5 2.5 12 0 3.0 0.7 1.4 2.1 2.8 3.5 4.2 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 18 2.0 12 RDS(on), On-Resistance Normalized 15 VGS=4.5V 9 6 VGS=10V 3 0.1 VGS=10V ID=24A 1.8 1.6 1.4 1.2 VGS=4.5V ID=19A 1.0 0 20 1 40 60 80 0 100 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage VDS=VGS ID=250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 50 75 100 125 150 Tj(°C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(°C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage -55 C 25 C 0 0 RDS(on)(m Ω ) 48 100 125 150 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 Tj, Junction Temperature(°C ) -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Mar,02,2011 3 www.samhop.com.tw STU/D458S Ver 1.0 60 24 Is, Source-drain current(A) ID=24A RDS(on)(m Ω ) 20 125 C 16 12 8 25 C 75 C 4 0 125 C 10 75 C 1 0 4 2 6 0 10 8 0.50 0.75 1.00 1.25 Figure 8. Body Diode Forward Voltage Variation with Source Current Figure 7. On-Resistance vs. Gate-Source Voltage VGS, Gate to Source Voltage(V) 2400 2000 Ciss 1600 0.25 VSD, Body Diode Forward Voltage(V) VGS, Gate-to-Source Voltage(V) C, Capacitance(pF) 25 C 1200 800 Coss 400 Crss 10 VDS=20V ID=24A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 10 5 15 20 30 25 35 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 40 1000 300 Switching Time(ns) 100 ID, Drain Current(A) TD(off ) Tf Tr TD(on) 10 100 R DS (O N) Lim it 10 1m 10 10 m DC s 1 0u s s VGS=10V Single Pulse TA=25 C VDS=20V,ID=1A VGS=10V 0.1 1 1 10 100 0.1 Rg, Gate Resistance( Ω ) 1 10 40 VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Mar,02,2011 4 www.samhop.com.tw STU/D458S Ver 1.0 V(BR)DSS tp L VDS D.U.T RG + - VDD IAS 20V tp 0.01 IAS Unclamped Inductive Waveforms Uncamped Inductive Test Circuit Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. R JA(t)=r(t)* R JA 2. R JA=See Datasheet 3. TJM-TA=PDM*R JA(t) 4. Duty Cycle,D=t1/t2 SINGLE PULSE 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Mar,02,2011 5 www.samhop.com.tw STU/D458S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 11.430 10.830 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.426 0.450 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Mar,02,2011 6 www.samhop.com.tw STU/D458S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Mar,02,2011 7 www.samhop.com.tw STU/D458S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Mar,02,2011 8 www.samhop.com.tw