SAMHOP STM6914

STM6914
S a mHop Microelectronics C orp.
Ver 1.0
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
Rugged and reliable.
32 @ VGS=10V
30V
Suface Mount Package.
6.5A
52 @ VGS=4.5V
S O-8
1
D2
5
4
G2
D2
6
3
S2
D1
7
2
G1
D1
8
1
S1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
TA=25°C
TA=70°C
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
TA=25°C
TA=70°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Limit
30
±20
Units
V
V
6.5
5.2
A
24
A
A
2
W
1.28
W
-55 to 150
°C
62.5
°C/W
Oct,23,2008
1
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STM6914
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Total Gate Charge
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
Min
VGS=0V , ID=250uA
30
Typ
VGS=4.5V , ID=5.1A
VDS=5V , ID=6.5A
uA
1
±100
nA
1.9
26
3
32
V
m ohm
40
7
52
m ohm
VGS= ±20V , VDS=0V
1
Units
V
VDS=24V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=6.5A
Max
S
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Conditions
513
91
73
pF
pF
pF
10
11
17.5
10.5
ns
ns
ns
ns
VDS=15V,ID=6.5A,VGS=10V
9.2
nC
VDS=15V,ID=6.5A,VGS=4.5V
4.7
nC
VDS=15V,ID=6.5A,
VGS=4.5V
1.3
2.7
nC
nC
VDS=15V,VGS=0V
f=1.0MHz
c
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
IS
VSD
VGS=0V,IS=2A
Diode Forward Voltage b
0.82
2
A
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Oct,23,2008
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STM6914
Ver 1.0
15
25
VGS=4.5V
20
VGS=5V
I D, Drain Current(A)
I D, Drain Current(A)
VGS=10V
VGS=4V
15
10
VGS=3.5V
5
12
Tj=125 C
9
-55 C
25 C
6
3
VGS=3V
0
0
0.5
1.5
1.0
2.0
2.5
0
3.0
0.0
2.8
3.5
4.2
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.60
R DS(on), On-Resistance
Normalized
V G S =4.5V
RDS(on)(m Ω)
2.1
VGS, Gate-to-Source Voltage(V)
55
44
33
22
V G S =10V
11
5
1
10
15
20
1.48
1.24
1.12
V G S =4.5V
I D =5.1A
1.00
0.88
25
V G S =10V
I D =6.5A
1.36
0
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
BVDSS, Normalized
Drain-Source Breakdown Voltage
VDS=VGS
ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.3
1.2
50
25
Tj, Junction Temperature(° C )
ID, Drain Current(A)
Vth, Normalized
Gate-Source Threshold Voltage
1.4
V DS, Drain-to-Source Voltage(V)
66
1
0.7
100 125 150
Tj, Junction Temperature( ° C )
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,23,2008
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STM6914
Ver 1.0
20.0
90
Is, Source-drain current(A)
ID=6.5A
R DS(on)(m Ω)
75
60
45
125 C
30
75 C
25 C
15
0
0
2
4
6
8
10.0
5.0
75 C
1.0
10
0
V GS, Gate-to-Source Voltage(V)
0.9
1.2
1.5
V GS, Gate to Source Voltage(V)
10
750
C, Capacitance(pF)
0.6
Figure 8. Body Diode Forward Voltage
Variation with Source Current
900
600
Ciss
450
300
Coss
150
Crss
0
5
10
15
20
25
VDS=15V
ID=6.5A
8
6
4
2
0
30
2
0
4
8
6
10
12
14
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
16
80
I D, Drain Current(A)
1000
Switching Time(ns)
0.3
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
0
25 C
125 C
100
Tr
TD(off)
Tf
TD(on)
10
VDS=15V,ID=1A
VGS=10V
1
10
RD
ON
S(
)L
im
it
10
1m
10
1
DC
10
ms
0m
s
0u
s
s
VGS=10V
Single Pulse
TA=25 C
0.1
0.03
1
6 10
60 100
600
0.1
Rg, Gate Resistance(Ω)
1
10
30
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Figure 11. switching characteristics
Oct,23,2008
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STM6914
Ver 1.0
V ( BR )D S S
15V
tp
D R IVE R
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
Normalized Transient
Thermal Resistance
10
1
0.5
0.2
0.1
P DM
0.05
t1
0.1
t2
0.02
0.01
0.01
0.00001
1.
2.
3.
4.
Single Pulse
0.0001
0.001
0.01
0.1
1
10
R įJ A (t)=r (t) * R įJ A
R įJ A =S ee Datas heet
T J M-T A = P DM* R įJ A (t)
Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
Oct,23,2008
5
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STM6914
Ver 1.0
PACKAGE OUTLINE DIMENSIONS
SO-8
1
L
E
D
A
C
0.015X45±
B
A1
e
0.008
TYP.
0.016 TYP.
0.05 TYP.
H
MILLIME T E R S
INC HE S
S Y MB OLS
MIN
A
A1
D
E
H
L
1.35
0.10
4.80
3.81
5.79
0.41
0±
MAX
1.75
0.25
4.98
3.99
6.20
1.27
8±
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0±
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8±
Oct,23,2008
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STM6914
Ver 1.0
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1
D1
P2
B0
E
E2
E1
A
A0
A
P0
D0
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:р
PACKAGE
A0
SOP 8N
150п
6.50
²0.15
B0
K0
D0
D1
E
5.25
²0.10
2.10
²0.10
ӿ1.5
(MIN)
ӿ1.55
²0.10
12.0
+0.3
- 0.1
E1
1.75
²0.10
E2
P0
P1
P2
T
5.5
²0.10
8.0
²0.10
4.0
²0.10
2.0
²0.10
0.30
²0.013
SO-8 Reel
W1
S
K
V
M
N
G
R
H
W
UNIT:р
TAPE SIZE
12 р
REEL SIZE
M
N
W
W1
H
ӿ330
330
² 1
62
²1.5
12.4
+ 0.2
16.8
- 0.4
ӿ12.75
+ 0.15
K
S
G
R
V
2.0
²0.15
Oct,23,2008
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