RFUH25TB3SFH : Diodes

Data Sheet
AEC-Q101 Qualified
Super Fast Recovery Diode
RFUH25TB3SFH
zSerise
Super Fast Recovery
zDimensions(Unit : mm)
zStructure
㻠㻚㻡㼼㻜㻚㻟
䚷䚷䚷㻌㻜㻚㻝
zApplications
General rectification
㻞㻚㻤㼼㻜㻚㻞
䚷䚷䚷㻌㻜㻚㻝
㻡㻚㻜㼼㻜㻚㻞
FUH25T
B3S ձ
㻝㻟㻚㻡㻹㻵㻺
㻝㻚㻞
㻝㻚㻟
zConstruction
Silicon epitaxial planer type
㻝㻡㻚㻜㼼㻜㻚㻠
㻌㻌㻌㻌㻌䚷㻌㻜㻚㻞
㻤㻚㻜
zFeatures
1)Ultra low switching loss
2)High current overload capacity
㻤㻚㻜㼼㻜㻚㻞
㻝㻞㻚㻜㼼㻜㻚㻞
㻝㻜㻚㻜㼼㻜㻚㻟
䚷䚷䚷㻌㻜㻚㻝
㻜㻚㻤
㻔㻝㻕 㻔㻞㻕 㻔㻟㻕
2.54d0.5
2.54d0.5
㻜㻚㻣㼼㻜㻚㻝
㻌㻌㻌㻌㻌㻌㻌㻜㻚㻜㻡
㻞㻚㻢㼼㻜㻚㻡
ROHM : TO220FN
ձ Manufacture Year Week
zAbsolute Maximum Ratings(Tc=25°C)
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Parameter
VRM
Duty䍺0.5
350
V
Reverse voltage
VR
Direct voltage
350
V
Average rectified foward current
Io
20
A
100
A
°C
°C
IFSM
Forward current surge peak
60Hz half sin wave , Resistive load
Tc=74°C
60Hz half sin wave , Non-repetitive at Tj=25°C
Junction temperature
Tj
150
Storage temperature
Tstg
55 to 150
zElectrical Characteristics(Tj=25°C)
Parameter
Conditions
Min.
Typ.
Max.
Unit
VF
IF=20A
䠉
1.25
1.45
V
Reverse current
IR
VR=350V
䠉
0.05
10
μA
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25×IR
䠉
18
30
ns
Rth(j-c)
Junction to case
䠉
䠉
2.0
°C/W
Symbol
Forward voltage
Thermal resistance
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1/4
2012.06 - Rev.A
RFUH25TB3SFH
Data Sheet
100
100000
Tj=150°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
10000
Tj=150°C
10
Tj=125°C
Tj=75°C
1
Tj=25°C
Tj=125°C
1000
Tj=75°C
100
Tj=25°C
10
1
0.1
0
500
1000
1500
2000
0
2500
50
100
150
200
250
300
350
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100
1290
IF=20A
VR=350V
Tj=25°C
Tj=25°C
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
1270
1250
1230
1210
AVE:1218mV
1190
10
AVE:24.5nA
1170
1
1150
IR DISPERSION MAP
VF DISPERSION MAP
400
1000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MHz
100
395
f=1MHz
VR=0V
390
Tj=25°C
385
380
375
AVE:386pF
370
365
360
355
350
10
0
5
10
15
20
25
30
Ct DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
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© 2012 ROHM Co., Ltd. All rights reserved.
2/4
2012.06 - Rev.A
RFUH25TB3SFH
Data Sheet
360
30
IF=0.5A
IR=1.0A
Irr=0.25×IR
RESERVE RECOVERY TIME:trr(ns)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
340
320
300
280
AVE:306A
260
240
IFSM
220
8.3ms
25
Tj=25°C
20
15
AVE:17.4ns
10
5
1cyc.
0
200
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
1000
IFSM
8.3ms 8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
1cyc.
100
10
time
100
10
1
10
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
8
AVE:10.6kV
6
AVE:0.95kV
2
C=200pF
R=0Ω
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
10
0
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
12
4
10
1
0.1
10
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
Rth(j-c)
0.1
0.001
C=100pF
R=1.5kΩ
Rth(j-a)
10
3/4
2012.06 - Rev.A
RFUH25TB3SFH
Data Sheet
60
35
D.C.
50
30
D=0.8
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
FORWARD POWER
DISSIPATION:Pf(W)
D=0.5
40
half sin wave
D=0.2
30
D=0.1
D=0.05
20
10
Io
VR
t
25
T
20
D.C.
D=t/T
VR=350V
Tj=150°C
D=0.8
D=0.5
15
half sin wave
D=0.2
10
D=0.1
5
D=0.05
0
0
0
5
10
15
20
25
30
0
35
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
D.C.
30
0A
Io
0V
VR
D=0.8
t
T
25
D=0.5
30
60
90
120
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
35
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
0V
D=t/T
VR=350V
Tj=150°C
20
half sin wave
15
D=0.2
10
D=0.1
D=0.05
5
0
0
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2012 ROHM Co., Ltd. All rights reserved.
4/4
2012.06 - Rev.A
Notice
Notes
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R1120A