ROHM RF08L6S

Super Fast Recovery Diode
RF08L6S
●Dimensions(Unit : mm)
●Series
Standard Fast Recovery
●Land size figure (Unit : mm)
20
4.2
6
②
0.1±0.02
0.1
5.0±0.3
86
①
4.5±0.2
●Applications
General rectification
1.2±0.3
2.0
2.6±0.2
PMDS
●Features
1)Small power mold type.(PMDS)
2)high switching speed
3)Low forward voltage
2.0±0.2
1.5±0.2
●Structure
ROHM : PMDS
JEDEC : SOD-106
Manufacture date
①
②
●Construction
Silicon epitaxial planar
●Taping dimensions(Unit : mm)
2.0±0.05
0.3
φ1.55±0.05
12±0.2
5.5±0.05
0.05
9.5±0.1
5.3±0.1
1.75±0.1
4.0±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
●Absolute maximum ratings(Tl=25℃)
Parameter
Symbol
Repetitive peak Reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
●Electrical characteristics (Tj=25℃)
Parameter
Symbol
VF
Forward voltage
Conditions
D≦0.5
Direct voltage
Glass epoxy substrate mounted
60Hz half sin wave, Non-repetitive
Ta=25℃
one cycle peak value, Tj=25℃
Tl=100℃
Limits
600
600
0.8
Unit
V
V
A
20
A
150
-55to+150
℃
℃
Conditions
Min.
Typ.
Max.
Unit
IF=0.8A
-
1
1.3
V
Reverse current
IR
VR=600V
-
0.01
10
µA
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25×I R
-
50
70
ns
Rth(j-l)
junction to lead
-
-
23
℃/W
Thermal Resistance
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©2009 ROHM Co., Ltd. All rights reserved.
1/2
2009.04 - Rev.A
RF08L6S
10000
REVERSE CURRENT:IR(nA)
Tj=125℃
1
Tj=150℃
0.1
Tj=25℃
Tj=75℃
0.01
100
1000
Tj=150℃
100
Tj=125℃
10
f =1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
10
FORWARD CURRENT:IF(A)
Data Sheet
Tj=75℃
1
10
Tj=25℃
0.1
0.001
0
500
1000
1500
1
0
2000
100
200
FORWARD VOLTAGE:VF (mV)
VF -I F CHARACTERISTICS
300
400
0
1000
AVE:999.5mV
950
10
AVE:7.35nA
1
Ct DISPERSION MAP
1cyc
60
8.3ms
40
AVE:49.4A
20
1000
IF=0.5A
IR =1A
Irr=0.25*IR
Tj=25℃
55
50
45
PEAK SURGE
FORWARD CURRENT:IFSM(A)
RESERVE RECOVERY TIME:trr(ns)
60
AVE:48.8ns
40
35
10
1
30
AVE:9.80kV
20
15
10
AVE:2.70kV
5
0
10
10
TIME:t(ms)
I FSM-t CHARACTERISTICS
10
NUMBER OF CY CLES
I FSM-CY CLE CHARACTERISTICS
1000
25
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
100
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
t
8.3ms
1cyc
1
1000
Ifsm
8.3ms
100
trr DISPERSION MAP
I FSM DISRESION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
30
0
1
AVE:44.2pF
40
I R DISPERSION MAP
Ifsm
Rth(j-a)
1ms
100
time
300us
Rth(j-l)
10
1
On Glass Epoxi Board
0.1
C=200pF
R=0Ω
100
C=100pF
R=1.5kΩ
0.001
0.01
0.1
1
10
100
Io
0V
1.6
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D=0.8
1.2
FORWARD POWER
DISSIPATION:Pf(W)
D=0.5
half sin wav e
D=0.2
1
0.8
D=0.1
D=0.05
0.6
0.4
0.2
D=0.8
T
1
half sin wav e
0.8
0.6
D=0.2
0.4
D=0.1
0.5
1
1.5
2
D.C.
T
D=t/T
VR=480V
Tj=150℃
1.4
D=0.8
1.2
D=0.5
1
half sin wav e
0.8
0.6
0.4
0.2
D=0.0
0
0
D=t/T
VR=480V
Tj=150℃
VR
t
1.6
VR
t
D=0.5
0.2
0
0V
1.4
1.2
1.8
Io
0A
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
1.8
D=0.2
D=0.1
D=0.05
0
0
30
60
90
120
150
0
30
60
90
AVERAGE RECTIFIED
AMBIENT TEMPERATURE:Ta(℃)
LEAD TEMPARATURE:Tl(℃)
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
Derating Curv e゙(Io-Ta)
Derating Curv e゙(Io-Tl)
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©2009 ROHM Co., Ltd. All rights reserved.
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
D.C.
100
IF =100mA
IM=10mA
0A
1.4
30
30
VF DISPERSION MAP
80
25
50
0.1
900
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
f=1MHz
V R=0V
Tj=25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Tj=25℃
VR=600V
n=30pcs
REVERSE CURRENT:IR (nA)
Tj=25℃
n=30pcs
1050
5
60
I F =0.8A
FORWARD VOLTAGE:VF(mV)
600
100
1100
PEAK SURGE
FORWARD CURRENT:IFSM(A)
500
REVERSE VOLTAGE:VR(V)
VR-I R CHARACTERISTICS
2/2
120
150
2009.04 - Rev.A
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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