MTNK3N3

CYStech Electronics Corp.
ESD protected N-CHANNEL MOSFET
MTNK3N3
BVDSS
ID
RDSON
Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date : 2013.10.23
Page No. : 1/7
20V
100mA
3Ω
Description
• Low voltage drive, 1.8V
• Easy to use in parallel
• High speed switching
• ESD protected device
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTNK3N3
SOT-23
D
G
G：Gate
S：Source
D：Drain
S
Ordering Information
Device
MTNK3N3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTNK3N3
CYStek Product Specification
Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date : 2013.10.23
Page No. : 2/7
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
ESD susceptibility
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Symbol
BVDSS
Limits
20
±8
100
400
*1
300
350
*2
-55~+150
417
VGS
ID
IDM
PD
Tj
Rth,ja
Unit
V
V
mA
mA
mW
V
°C
°C/W
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
Min.
Typ.
Max.
Unit
20
0.5
100
1.7
3.5
-
1.0
±1
500
3
6
-
V
V
μA
nA
23
7.7
5.8
-
GFS
Dynamic
Ciss
Coss
Crss
Source-Drain Diode
*VSD
-
Test Conditions
mS
VGS=0, ID=100μA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0
VDS=20V, VGS=0
VGS=4.5V, ID=100mA
VGS=1.8V, ID=20mA
VDS=5V, ID=100mA
50
25
5
pF
VDS=10V, VGS=0, f=1MHz
1
V
VGS=0V, IS=10mA
Ω
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTNK3N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date : 2013.10.23
Page No. : 3/7
Typical Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
0.8
0.7
ID, Drain Current(A)
0.5
4.5V
0.7
4.0V
3.5V
0.6
ID, Drain Current(A)
5V
0.6
3V
0.4
2.5V
0.3
2.0V
0.2
1.8V
0.1
VDS=3V
0.5
0.4
0.3
0.2
VGS=1.5V
0.1
0
0
0
1
2
3
VDS, Drain-Source Voltage(V)
0
4
1
5
6
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Static Drain-Source On-State resistance vs Drain Current
10
R DS(ON), Static Drain-Source OnState Resistance(Ω)
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
7
VGS=1.8V
VGS=4.5V
1
0.001
6
5
ID=100mA
4
3
2
ID=20mA
1
0
0.01
0.1
ID, Drain Current(A)
1
0
Reverse Drain Current vs Source-Drain Voltage
2
4
6
8
VGS , Gate-Source Voltage(V)
10
Capacitance vs Drain-to-Source Voltage
1
100
0.9
0.8
Capacitance---(pF)
VSD, Source-Drain Voltage(V)
2
3
4
VGS, Gate-Source Voltage(V)
0.7
0.6
0.5
0.4
Ciss
C oss
10
Crss
0.3
0.2
1
0.1
0
MTNK3N3
0.1
0.2
0.3
IDR , Reverse Drain Current(A)
0.4
0.1
1
10
VDS, Drain-Source Voltage(V)
100
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date : 2013.10.23
Page No. : 4/7
Typical Characteristics(Cont.)
Power Derating Curves
PD, Power Dissipation(mW)
350
300
250
200
150
100
50
0
0
50
100
150
TA, Ambient Temperature(℃)
200
Recommended Soldering Footprint
MTNK3N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date : 2013.10.23
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTNK3N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date : 2013.10.23
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTNK3N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C447N3
Issued Date : 2010.08.18
Revised Date : 2013.10.23
Page No. : 7/7
SOT-23 Dimension
Marking:
Device Code
xx
K3
Date Code
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Gate 2.Source 3.Drain
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTNK3N3
CYStek Product Specification