MTB55N03J3

CYStech Electronics Corp.
Spec. No. : C723J3
Issued Date : 2012.05.07
Revised Date : 2013.12.26
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB55N03J3
BVDSS
ID
RDS(ON)@VGS=10V, ID=12A
RDS(ON)@VGS=4.5V, ID=6A
30V
24A
34mΩ(typ)
58mΩ(typ)
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
TO-252(DPAK)
MTB55N03J3
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
MTB55N03J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB55N03J3
CYStek Product Specification
Spec. No. : C723J3
Issued Date : 2012.05.07
Revised Date : 2013.12.26
Page No. : 2/ 9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.2mH, ID=24A, RG=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
Total Power Dissipation @ TC=25℃
Total Power Dissipation @ TC=100℃
Operating Junction and Storage Temperature Range
VDS
VGS
30
±20
24
15
50
24
57.6
3
50
20
-55~+150
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Unit
V
A
mJ
W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle ≤ 1%.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Rth,j-a
Value
2.5
50 (Note 1)
110 (Note 2)
Unit
°C/W
Note : 1.When mounted on PCB of 1 in² pad area, t≤10s.
2. When mounted on the minimum pad size recommended (PCB mount), t≤10s.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
MTB55N03J3
Min.
Typ.
Max.
Unit
Test Conditions
30
1
-
1.8
34
58
11
2.5
±100
1
25
45
70
-
V
V
nA
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VGS=±20, VDS=0V
VDS =30V, VGS =0V
VDS =24V, VGS =0V, Tj=125°C
VGS =10V, ID=12A
VGS =4.5V, ID=6A
VDS =5V, ID=10A
-
9
1.7
2.5
4
7
11
4
-
μA
mΩ
S
nC
VDS=15V, ID=12A, VGS=10V
ns
VDS=15V, ID=1A, VGS=10V, RGS=6Ω
CYStek Product Specification
CYStech Electronics Corp.
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
398
39
35
-
-
1.06
28
40
12
20
1.3
-
pF
Spec. No. : C723J3
Issued Date : 2012.05.07
Revised Date : 2013.12.26
Page No. : 3/ 9
VDS=15V,VGS=0V, f=1MHz
A
V
ns
nC
IF=12A, VGS=0V
IF=12A, VGS=0, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTB55N03J3
CYStek Product Specification
Spec. No. : C723J3
Issued Date : 2012.05.07
Revised Date : 2013.12.26
Page No. : 4/ 9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
25
ID, Drain Current(A)
1.4
10V
9V
8V
7V
VGS=6V
BVDSS, Normalized Drain-Source
Breakdown Voltage
30
VGS=5V
20
15
VGS=4V
10
5
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=3V
0.4
0
0
1
-60 -40 -20
5
2
3
4
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
10000
1000
VGS=3V
100
VGS=4.5V
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
VGS=10V
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
2
180
R DS(on), Normalized Static DrainSource On-State Resistance
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
ID=12A
160
140
120
100
80
60
40
VGS=10V, ID=12A
1.6
1.2
0.8
0.4
RDS(ON) @ Tj=25°C : 34 mΩ
20
0
0
0
MTB55N03J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723J3
Issued Date : 2012.05.07
Revised Date : 2013.12.26
Page No. : 5/ 9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), NormalizedThreshold Voltage
1000
Capacitance---(pF)
Ciss
100
C oss
Crss
1.4
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
10
0.1
1
10
VDS , Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VDS=5V
Pulsed
Ta=25°C
1
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance
60
Gate Charge Characteristics
10
0.1
VDS=15V
ID=12A
8
6
4
2
0
0.01
0.01
0.1
1
ID, Drain Current(A)
0
10
2
4
6
8
Qg, Total Gate Charge(nC)
10
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
30
100
10
1ms
10ms
100μs
ID, Maximum Drain Current(A)
RDS(on)
limited
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
100ms
DC
1
TC=25°C, Tj=150°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
0.1
25
20
15
10
5
0
0.01
0.1
MTB55N03J3
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723J3
Issued Date : 2012.05.07
Revised Date : 2013.12.26
Page No. : 6/ 9
Typical Characteristics(Cont.)
Transient Thermal Response Curves
ZθJC(t), Thermal Response
10
D=0.5
1
1.ZθJC(t)=2.5 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB55N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723J3
Issued Date : 2012.05.07
Revised Date : 2013.12.26
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTB55N03J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C723J3
Issued Date : 2012.05.07
Revised Date : 2013.12.26
Page No. : 8/ 9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB55N03J3
CYStek Product Specification
Spec. No. : C723J3
Issued Date : 2012.05.07
Revised Date : 2013.12.26
Page No. : 9/ 9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
B55
N03
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB55N03J3
CYStek Product Specification