AP30P10GS-HF (MN0307-19) - Advanced Power Electronics Corp

AP30P10GS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
-100V
RDS(ON)
80mΩ
ID
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
G
-25A
S
Description
AP30P10 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance.
GD
S
TO-263(S)
Absolute Maximum [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
+20
V
[email protected]=25℃
Drain Current, VGS @ 10V
-25
A
[email protected]=100℃
Drain Current, VGS @ 10V
-15
A
-80
A
89
W
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
3
Value
Units
1.4
℃/W
40
℃/W
1
201501273
AP30P10GS-HF
o
Electrical [email protected]=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-100
-
-
V
VGS=-10V, ID=-12A
-
-
80
mΩ
VGS=-4.5V, ID=-8A
-
-
100
mΩ
VGS=0V, ID=-1mA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-12A
-
23
-
S
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-18A
-
50
80
nC
Qgs
Gate-Source Charge
VDS=-80V
-
7.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
16.5
-
nC
td(on)
Turn-on Delay Time
VDS=-50V
-
12
-
ns
tr
Rise Time
ID=-18A
-
33
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
61
-
ns
tf
Fall Time
RD=2.8Ω
-
78
-
ns
Ciss
Input Capacitance
VGS=0V
-
2580 4130
pF
Coss
Output Capacitance
VDS=-25V
-
185
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Min.
Typ.
IS=-18A, VGS=0V
-
-
-1.3
IS=-18A, VGS=0V,
-
53
-
ns
-
nC
Source-Drain Diode
Symbol
Parameter
2
VSD
Forward On Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
dI/dt=-100A/µs
-
125
Max. Units
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP30P10GS-HF
60
80
-10V
- 7 .0V
- 6 .0V
- 5.0 V
60
50
V G = - 4 .0 V
40
-10V
-7.0V
-6.0V
-5.0V
T C =150 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
T C = 25 o
C
40
V G = -4.0V
30
20
20
10
0
0
0
4
8
12
16
20
0
4
Fig 1. Typical Output Characteristics
12
16
20
Fig 2. Typical Output Characteristics
80
2.0
I D = -8 A
I D = - 12 A
V G = -10V
T C =25 ℃
Normalized RDS(ON)
76
RDS(ON) (mΩ )
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
72
68
1.6
1.2
0.8
64
60
0.4
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
25
1.2
Normalized VGS(th)
-IS(A)
20
15
T j =150 o C
T j =25 o C
10
1.0
0.8
0.6
5
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP30P10GS-HF
f=1.0MHz
10000
V DS = - 80 V
I D = - 18 A
10
C iss
8
1000
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C oss
C rss
100
4
2
10
0
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R thjc)
Operation in this area
limited by RDS(ON)
100us
10
-ID (A)
1ms
10ms
100ms
DC
1
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP30P10GS-HF
MARKING INFORMATION
30P10GS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5