AP30SL60WL-A - Advanced Power Electronics Corp

AP30SL60WL-A
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Fast Switching Characteristic
D
VDS @ Tj,max.
700V
▼ Simple Drive Requirement
RDS(ON)
0.13Ω
▼ RoHS Compliant & Halogen-Free
3
ID
26.2A
G
S
Description
AP30SL60 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-247 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
S
TO-247 (WL)
D
G
.
Absolute Maximum [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=100℃
Rating
Units
650
V
+20
V
3
26.2
A
3
16.5
A
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
1
IDM
Pulsed Drain Current
66
A
[email protected]=25℃
Total Power Dissipation
178
W
[email protected]=25℃
Total Power Dissipation
3.12
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.7
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
40
℃/W
Data & specifications subject to change without notice
1
201409191
AP30SL60WL-A
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
650
-
-
V
VGS=10V, ID=14A
-
-
0.13
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=14A
-
25
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=14A
-
70
112
nC
Qgs
Gate-Source Charge
VDS=480V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
28
-
nC
td(on)
Turn-on Delay Time
VDD=300V
-
16
-
ns
tr
Rise Time
ID=14A
-
33
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
77
-
ns
tf
Fall Time
VGS=10V
-
44
-
ns
Ciss
Input Capacitance
VGS=0V
-
2630 4208
pF
Coss
Output Capacitance
VDS=100V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Rg
Gate Resistance
f=1.0MHz
-
4.5
9
Ω
Min.
Typ.
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=14A, VGS=0V
-
0.85
-
V
trr
Reverse Recovery Time
IS=14A, VGS=0V
-
340
-
ns
Qrr
Reverse Recovery Charge
dI/dt=50A/µs
-
3
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Limited by max. junction temperature. Maximum duty cycle D=0.75
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP30SL60WL-A
30
60
o
T C =150 C
ID , Drain Current (A)
T C =25 C
50
ID , Drain Current (A)
o
10V
8.0V
7.0V
6.0V
40
V G =5.0V
30
20
0.37Ω
20
10V
8.0V
7.0V
6.0V
V G =5.0V
10
10
0
0
0
4
8
12
16
20
0
24
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
24
32
Fig 2. Typical Output Characteristics
160
4
I D =14A
V G =10V
I D =14A
o
140
130
.
Normalized RDS(ON)
T C =25 C
150
RDS(ON) (mΩ)
16
V DS , Drain-to-Source Voltage (V)
3
2
120
1
110
0
100
2
4
6
8
-50
10
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C )
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
16
I D =250uA
1.5
IS (A)
Normalized VGS(th)
12
8
T j = 150 o C
T j = 25 o C
1
0.5
4
0
0
0
0.2
0.4
0.6
0.8
1
V SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
-25
0
25
50
75
100
125
150
o
T j , Junction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP30SL60WL-A
f=1.0MHz
12
8000
I D =14A
V DS =480V
6000
0.37Ω
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
4000
4
C iss
2000
2
0
0
0
20
40
60
80
100
0
100
200
300
400
500
600
C oss
C rss
700
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this area
limited by RDS(ON)
10
ID (A)
10us
100us
1ms
10ms
1
100ms
DC
o
T C =25 C
Single Pulse
0.1
.
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP30SL60WL-A
MARKING INFORMATION
Part Number
Package Code : WL
30SL60WL
A
Option
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
.
5