AP2763I-A - Advanced Power Electronics Corp

AP2763I-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test
D
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
BVDSS
750V
RDS(ON)
1.45Ω
ID
4
8A
G
▼ RoHS Compliant & Halogen-Free
S
Description
AP2763 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink
G
D
TO-220CFM(I)
S
.
Absolute Maximum [email protected]=25oC(unless
otherwise specified)
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=100℃
Drain Current, VGS @ 10V
4
Drain Current, VGS @ 10V
4
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2
Rating
Units
750
V
+30
V
8
A
5
A
30
A
50
W
18
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
201502254
AP2763I-A-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
3
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
750
-
-
V
VGS=10V, ID=4.0A
-
-
1.45
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4.0A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS= +30V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=4A
-
47
75
nC
Qgs
Gate-Source Charge
VDS=600V
-
8.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
20
-
nC
td(on)
Turn-on Delay Time
VDD=360V
-
15
-
ns
tr
Rise Time
ID=4A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
74
-
ns
tf
Fall Time
VGS=10V
-
21
-
ns
Ciss
Input Capacitance
VGS=0V
-
1880 3010
pF
Coss
Output Capacitance
VDS=25V
-
140
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
9
-
pF
Rg
Gate Resistance
-
2.6
5.2
Ω
Min.
Typ.
IS=4.0A, VGS=0V
-
-
1.5
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=4.0A, VGS=0V,
-
400
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , RG=25Ω, L=1mH
3.Pulse test
4.Ensure that the junction temperature does not exceed T Jmax..
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2763I-A-HF
5.0
5.00
10V
7.0V
5.0V
ID , Drain Current (A)
4.0
10V
7.0V
5.0V
4.5V
T C =150 o C
4.00
ID , Drain Current (A)
o
T C =25 C
3.0
4.5V
2.0
3.00
2.00
V G =4.0V
1.00
1.0
V G =4.0V
0.00
0.0
0
2
4
6
8
10
0
8
12
16
20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1.2
I D = 4.0 A
V G =10V
1.1
1.0
.
Normalized RDS(ON)
2.5
Normalized BVDSS
4
V DS , Drain-to-Source Voltage (V)
2.0
1.5
1.0
0.9
25
0.5
0.0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
o
Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
10.0
T j =150 o C
T j =25 o C
IS(A)
6.0
Normalized VGS(th)
8.0
4.0
1.2
0.8
2.0
0.0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2763I-A-HF
f=1.0MHz
12
10000
I D = 4.5 A
C iss
V DS = 380 V
V DS = 480 V
V DS = 600 V
8
1000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C oss
100
4
C rss
10
2
1
0
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100.00
1
10.00
ID (A)
100us
1ms
1.00
10ms
100ms
0.10
1s
DC
T C =25 o C
Single Pulse
.
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
25
0.001
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP2763I-A-HF
MARKING INFORMATION
Part Number
Option
A
2763I
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
.
5