AP4410GM-HF (MN0303-03) - Advanced Power Electronics Corp

AP4410GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
D
▼ Fast Switching
D
D
D
▼ Simple Drive Requirement
G
▼ RoHS Compliant & Halogen-Free
SO-8
S
BVDSS
30V
RDS(ON)
13.5mΩ
ID
10A
S
S
Description
AP4410 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
D D
G
G
S S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
o
Absolute Maximum [email protected]=25 C(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
Rating
Units
30
V
+25
V
10
A
8
A
50
A
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient3
50
℃/W
Data and specifications subject to change without notice
1
201501084
AP4410GM-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.037
-
V/℃
VGS=10V, ID=10A
-
-
13.5
mΩ
VGS=4.5V, ID=5A
-
-
22
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=15V, ID=10A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +25V
-
-
+100
nA
Qg
Total Gate Charge
ID=10A
-
13.5
-
nC
Qgs
Gate-Source Charge
VDS=15V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
7
-
nC
td(on)
Turn-on Delay Time
VDS=25V
-
14
-
ns
tr
Rise Time
ID=1A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
21
-
ns
tf
Fall Time
RD=25Ω
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
1160
-
pF
Coss
Output Capacitance
VDS=15V
-
240
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
165
-
pF
Min.
Typ.
IS=2.1A, VGS=0V
-
-
1.2
V
o
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
17.1
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4410GM-HF
150
200
o
T A =150 o C
10V
8.0V
150
ID , Drain Current (A)
ID , Drain Current (A)
T A =25 C
6.0V
100
50
8.0V
100
6.0V
50
V G =4.0V
V G =4.0V
0
0
0
1
2
3
4
5
6
7
0
8
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.8
I D =10A
I D =10A
V G =10V
1.6
T A =25 o C
Normalized RDS(ON)
18
RDS(ON) (mΩ )
10V
16
14
1.4
1.2
1
12
0.8
10
0.6
3
4
5
6
7
8
9
10
11
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
100.00
10.00
IS(A)
VGS(th) (V)
2
o
o
T j =150 C
T j =25 C
1.00
1
0.10
0
0.01
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Jujnction Temperature ( C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4410GM-HF
f=1.0MHz
10000
10
I D =10A
V DS =15V
8
1000
C iss
C (pF)
VGS , Gate to Source Voltage (V)
12
6
4
C oss
C rss
100
2
0
10
0
5
10
15
20
25
30
1
6
Q G , Total Gate Charge (nC)
11
16
21
26
31
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
1ms
10
ID (A)
Normalized Thermal Response (R thja)
DUTY=0.5
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Circuit
Charge
Q
Fig 12. Gate Charge Circuit
4
AP4410GM-HF
MARKING INFORMATION
Part Number
4410GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5