AP9578GH-HF (MN0302-17) - Advanced Power Electronics Corp

AP9578GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
-60V
RDS(ON)
160mΩ
ID
G
-10A
S
Description
AP9578 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
G
D
S
TO-252(H)
Absolute Maximum [email protected]=25oC(unless otherwise specified)
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
+25
V
[email protected]=25℃
Drain Current, VGS @ 10V
-10
A
[email protected]=100℃
Drain Current, VGS @ 10V
-6
A
-45
A
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
28
W
Linear Derating Factor
0.23
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
3
Value
Units
4.5
℃/W
62.5
℃/W
1
201501274
AP9578GH-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=-10V, ID=-5A
-
-
160
mΩ
VGS=-4.5V, ID=-3A
-
-
200
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
8
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (T j=125 C) VDS=-48V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+100
nA
ID=-5A
-
9
16
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
2
td(on)
Turn-on Delay Time
VDS=-30V
-
9
-
ns
tr
Rise Time
ID=-5A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
32
-
ns
tf
Fall Time
VGS=-10V
-
27
-
ns
Ciss
Input Capacitance
VGS=0V
-
760
1220
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
Test Conditions
IS=-5A, VGS=0V
2
Max. Units
-1.2
V
trr
Reverse Recovery Time
IS=-5A, VGS=0V,
-
41
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
83
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9578GH-HF
30
25
-10V
-7.0V
o
T C = 25 C
25
-10V
- 7 .0V
T C = 150 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
20
-5.0V
-4.5V
20
15
10
V G = -3.0 V
-5.0V
-4.5V
15
10
V G = -3.0 V
5
5
0
0
0
2
4
6
8
10
12
0
Fig 1. Typical Output Characteristics
4
6
8
10
12
Fig 2. Typical Output Characteristics
175
2.0
I D = -5 A
V G = - 10V
Normalized RDS(ON)
I D = -3 A
T C =25 ℃
165
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
155
145
1.6
1.2
0.8
135
0.4
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10.0
2.0
Normalized VGS(th)
8.0
-IS(A)
6.0
o
4.0
o
T j =150 C
T j =25 C
1.5
1.0
0.5
2.0
0.0
0.0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9578GH-HF
f=1.0MHz
1000
I D = -5A
V DS = -48V
C iss
8
6
C (pF)
-VGS , Gate to Source Voltage (V)
10
100
C oss
4
C rss
2
0
10
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R thjc)
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
10
100us
1ms
1
10ms
100ms
DC
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP9578GH-HF
MARKING INFORMATION
9578GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
5