DMC25D0UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Device V(BR)DSS Q1 25V Q2 Features and Benefits -30V ID TA = +25°C RDS(ON) 4Ω @ VGS = 4.5V 0.4 A 80mΩ @ VGS= -12V -3.2 A 125mΩ @ VGS= -4.5V -2.6 A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Gate on N-Channel (>6kV Human Body Model) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: TSOT26 Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 DC-DC Converters Power Management Functions Load Switch Weight: 0.013 grams (Approximate) D2 D1 TSOT26 G2 G1 Gate Protection Diode Top View Top View Internal Circuit S2 S1 Q1 N-Channel MOSFET Q2 P-Channel MOSFET Ordering Information (Note 4) Part Number DMC25D0UVT-7 DMC25D0UVT-13 Notes: Case TSOT26 TSOT26 Packaging 3000 / Tape & Reel 10000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information C5D Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMC25D0UVT Document number: DS37508 Rev. 3 - 2 Mar 3 C5D = Product Type Marking Code YM or YM = Date Code Marking Y or Y= Year (ex: C = 2015) M = Month (ex: 9 = September) YM INFORMATION ADVANCE NEW PRODUCT Product Summary 2017 E Apr 4 May 5 2018 F Jun 6 2019 G Jul 7 1 of 11 www.diodes.com Aug 8 2020 H Sep 9 Oct O 2021 I Nov N Dec D April 2015 © Diodes Incorporated DMC25D0UVT Maximum Ratings – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic INFORMATION ADVANCE NEW PRODUCT Drain-Source Voltage Symbol VDSS Gate-Source Voltage VGSS Continuous Drain Current (Note 5) VGS = 4.5V Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 6) ID IS IDM Value 25 -0.5 +8 0.4 1.2 1.5 Unit V Value -30 ±12 -3.2 -14.4 -2.6 -1.2 -20 Unit V V A A A A A Value 1.2 101 5 37 -55 to +150 Unit W V A A A Maximum Ratings – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Note 9 Continuous Drain Current (Note 5) VGS = -10V ID Continuous Drain Current (Note 5) VGS = -4.5V Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 6) IS IDM Thermal Characteristics Characteristic Symbol PD Power Dissipation (Note 5) Steady State Note 9 Thermal Resistance, Junction to Ambient (Note 5) RθJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RθJC TJ, TSTG °C/W °C/W °C Electrical Characteristics – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 25 — — — — — — 1 100 V µA nA VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS(TH) RDS(ON) VSD 0.65 — — 0.85 3.8 0.76 1.5 4 1.2 V Ω V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 0.4A VGS = 0V, IS = 0.29A Ciss Coss Crss Rg Qg Qg Qgs Qgd — — — — — — — — — — — — 26.2 7.1 2.7 84.5 0.4 0.7 0.1 0.1 3 2.3 7.7 3.7 — — — — — — — — — — — — pF VDS = 10V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 5V, ID = 0.2A ns VGS = 4.5V, VDS = 6V, RG = 50Ω, ID = 0.5A tD(ON) tR tD(OFF) tF Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%. DMC25D0UVT Document number: DS37508 Rev. 3 - 2 2 of 11 www.diodes.com April 2015 © Diodes Incorporated DMC25D0UVT INFORMATION ADVANCE NEW PRODUCT Electrical Characteristics – Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -24V, VGS = 0V VGS = ±12V, VDS = 0V VGS(TH) RDS(ON) -0.9 59 75 — -0.7 -1.5 80 125 300 -1.2 V Static Drain-Source On-Resistance -0.5 — — — — VDS = VGS, ID = -250μA VGS = -12V, ID = -2.3A VGS = -4.5V, ID = -1.9A VGS = -2.5V, ID = -1A VGS = 0V, IS = -1A — — — — — — — — — — — — 854 53 47 11 10 21 1.5 2.8 3.5 3.3 61.4 14.6 — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF mΩ V Test Condition pF VDS = -15V, VGS = 0V, f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -15V, ID = -4A ns VGS = -10V, VDS = -15V, RG = 6Ω, ID = -1A 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to production testing. DMC25D0UVT Document number: DS37508 Rev. 3 - 2 3 of 11 www.diodes.com April 2015 © Diodes Incorporated DMC25D0UVT Typical Characteristics - N-CHANNEL 1 1.5 VGS=3.5V VDS=5V VGS=4.0V 0.8 VGS=2.5V 0.9 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=4.5V VGS=3.0V VGS=2.0V 0.6 VGS=1.5V 0.3 85℃ 25℃ 0.6 125℃ -55℃ 150℃ 0.4 0.2 VGS=1.2V 0 0.0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 1.5 1.2 0.9 VGS=4.5V 0.6 0.3 0 0 0.3 0.6 0 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.9 1.2 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 4 3 2 ID=400mA 1 0 1.5 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 8 1.8 VGS=4.5V 1.5 125℃ 150℃ 1 85℃ 25℃ 0.5 -55℃ RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2 3 5 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) INFORMATION ADVANCE NEW PRODUCT 1.2 VGS=4.5V, ID=500mA 1.6 1.4 VGS=2.5V, ID=100mA 1.2 1 0.8 0.6 0 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Temperature DMC25D0UVT Document number: DS37508 Rev. 3 - 2 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature 4 of 11 www.diodes.com -25 April 2015 © Diodes Incorporated 1.2 VGS(TH), GATE THESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω) 2 1.5 VGS=2.5V, ID=100mA 1 VGS=4.5V, ID=500mA 0.5 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 1 ID=1mA 0.9 0.8 ID=250µA 0.7 0.6 0.5 -50 150 1 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Theshold Variation vs Junction Temperature 100 CT, JUNCTION CAPACITANCE (pF) VGS=0V 0.9 IS, SOURCE CURRENT (A) 1.1 0.4 0 0.8 0.7 0.6 0.5 0.4 TA=150℃ 0.3 0.2 TA=85℃ TA=125℃ TA=25℃ 0.1 f=1MHz Ciss 10 Coss Crss TA=-55℃ 0 1 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs Current 1.5 0 8 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 20 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 6 VGS (V) INFORMATION ADVANCE NEW PRODUCT DMC25D0UVT 4 VDS=5V, ID=200mA 2 1 DC PW =10s PW =1s PW =100ms TJ(Max)=150℃ TA=25℃ PW =10ms VGS=4.5V Single Pulse DUT on 1*MRP Board 0.1 0.01 0 0 0.1 0.2 0.3 0.4 Qg (nC) 0.5 0.6 0.7 0.1 Document number: DS37508 Rev. 3 - 2 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Figure 11. Gate Charge DMC25D0UVT PW =1ms PW =100µs 5 of 11 www.diodes.com April 2015 © Diodes Incorporated DMC25D0UVT r(t), TRANSIENT THERMAL RESISTANCE INFORMATION ADVANCE NEW PRODUCT 1 D=0.9 D=0.7 D=0.5 0.1 D=0.3 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA (t)=r(t) * RθJA RθJA=147℃/W Duty Cycle, D=t1 / t2 D=0.005 D=Single Pulse 0.001 1E-05 DMC25D0UVT Document number: DS37508 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance 6 of 11 www.diodes.com 10 100 1000 April 2015 © Diodes Incorporated DMC25D0UVT Typical Characteristics - P-CHANNEL 15.0 10 VDS=-5V VGS=-10V VGS=-2.5V 85℃ VGS=-3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VGS=-4.0V 9.0 VGS=-4.5V VGS=-2.0V 6.0 3.0 VGS=-1.5V 125℃ 25℃ 150℃ -55℃ 6 4 2 VGS=-1.3V 0 0.0 0 1 2 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 14. Typical Output Characteristic 0 3 0.15 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 15. Typical Transfer Characteristic 3 0.3 ID=-2.3A 0.25 VGS=-2.5V 0.09 VGS=-4.5V 0.06 VGS=-10V 0.03 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.12 ID=-1.9A 0.2 0.15 0.1 ID=-1.0A 0.05 0 0 2 3 4 5 6 7 8 9 10 ID, DRAIN-SOURCE CURRENT (A) Figure 16. Typical On-Resistance vs Drain Current and Gate Voltage 0.12 VGS=-4.5V 150℃ 0.1 125℃ 0.08 85℃ 0.06 25℃ 0.04 -55℃ 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) INFORMATION ADVANCE NEW PRODUCT 12.0 2 4 6 VGS, GATE-SOURCE VOLTAGE (V) Figure 17. Typical Transfer Characteristic 8 1.8 1.6 VGS=-4.5V, ID=-2.0A 1.4 1.2 VGS=-10V, ID=-3.0A 1 0.8 0.6 0.02 0 2 4 6 8 10 ID, DRAIN CURRENT (A) Figure 18. Typical On-Resistance vs Drain Current and Temperature DMC25D0UVT Document number: DS37508 Rev. 3 - 2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 19. On-Resistance Variation with Temperature 7 of 11 www.diodes.com April 2015 © Diodes Incorporated VGS(TH), GATE THESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-ESISTANCE (Ω) 1.5 0.12 0.1 VGS=-4.5V, ID=-2.0A 0.08 0.06 VGS=-10V, ID=-3.0A 0.04 0.02 1.2 ID=-1mA 0.9 ID=-250µA 0.6 0.3 0 0 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 20. On-Resistance Variation with Temperature 10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 21. Gate Theshold Variation vs Junction Temperature 10000 IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) VGS=0V 8 6 4 TA=150℃ 2 TA=85℃ 1000 150℃ 125℃ 100 85℃ 10 25℃ 1 TA=25℃ TA=125℃ TA=-55℃ 0.1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 22. Diode Forward Voltage vs Current 0 1.5 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figue 23. Typical Drain-Source Leakge Current vs Voltage 10 10000 f=1MHz 8 Ciss 1000 6 VGS (V) CT, JUNCTION CAPACITANCE (pF) INFORMATION ADVANCE NEW PRODUCT DMC25D0UVT 100 4 VDS=-15V, ID=-4A Coss 2 Crss 10 0 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 24. Typical Junction Capacitance DMC25D0UVT Document number: DS37508 Rev. 3 - 2 30 0 8 of 11 www.diodes.com 2 4 6 8 10 12 14 16 18 20 22 Qg (nC) Figure 25. Gate Charge April 2015 © Diodes Incorporated DMC25D0UVT 100 ID, DRAIN CURRENT (A) INFORMATION ADVANCE NEW PRODUCT RDS(ON) Limited 10 1 0.1 DC PW =10s PW =1s PW =100ms PW =10ms TJ(Max)=150℃ PW =1ms TA=25℃ PW =100µs VGS=-4.5V Single Pulse DUT on 1*MRP Board 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 26. SOA, Safe Operation Area 100 Application Circuit DMC25D0UVT Document number: DS37508 Rev. 3 - 2 9 of 11 www.diodes.com April 2015 © Diodes Incorporated DMC25D0UVT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. INFORMATION ADVANCE NEW PRODUCT D e1 E E1 L2 c 4x1 e L 6x b A A2 A1 TSOT26 Dim Min Max Typ A 1.00 A1 0.01 0.10 A2 0.84 0.90 D 2.90 E 2.80 E1 1.60 b 0.30 0.45 c 0.12 0.20 e 0.95 e1 1.90 L 0.30 0.50 L2 0.25 θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMC25D0UVT Document number: DS37508 Rev. 3 - 2 10 of 11 www.diodes.com April 2015 © Diodes Incorporated DMC25D0UVT IMPORTANT NOTICE INFORMATION ADVANCE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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