ZVP0545GTA - Diodes Incorporated

ZVP0545G
Green
SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Features and Benefits
Mechanical Data

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450 Volt VDS
RDS(ON) = 150Ω
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
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Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound; UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
SOT223
D
G
S
Top View
Pin Out - Top
View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
ZVP0545GTA
Notes:
Marking
ZVP0545
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
ZVN
ZVP
0545
4310
ZVP0545G
Document number: DS33390 Rev. 4 - 2
YWW
SOT223
ZVP0545 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01 to 53)
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ZVP0545G
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
ID
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Value
-75
-400
Unit
V
V
mA
mA
Value
2
-55 to +150
Unit
W
°C
-450
±20
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Operating and Storage Temperature Range
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current (TJ = +25°C)
Gate-Source Leakage
On-State Drain Current (Note 5)
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)(Note 6)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
Notes:
Symbol
PD
TJ, TSTG
Symbol
Min
Typ
Max
Unit
BVDSS
-450
-
-
V
IDSS
-
-
-20
-2
µA
mA
IGSS
ID(ON)
-100
-
20
-
nA
mA
VGS(TH)
RDS(ON)
gfs
-1.5
40
-
-4.5
150
-
V
Ω
S
Ciss
Coss
Crss
-
-
120
20
5
10
15
15
20
pF
pF
pF
ns
ns
ns
ns
tD(ON)
tR
tD(OFF)
tF
Test Condition
VGS = 0V, ID = 1mA
VDS = -450V, VGS = 0V
VDS = -360V, VGS = 0V, TA =
+125°C (Note 6)
VGS = ±20V, VDS = 0V
VGS = -10V, VDS = -25V
VDS = VGS, ID = -1mA
VGS = -10V, ID = -50mA
VDS = -25V, ID = -50mA
VDS = -25V, VGS = 0V, f = 1.0MHz
VDD = -25V, ID = -50mA
5. Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%.
6. Sample test.
7. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.
ZVP0545G
Document number: DS33390 Rev. 4 - 2
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ZVP0545G
0.12
VDS=-50V
-55℃
0.3
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25℃
VGS=-8.0V
VGS=-10V
0.2
VGS=-5.0V
0.1
VGS=-4.5V
0.09
125℃
85℃
150℃
0.06
0.03
VGS=-4.0V
VGS=-3.5V
0
0.0
10
20
30
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
50
200
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
180
160
140
120
VGS=-10V
100
80
260
220
180
140
0
125℃
200
85℃
150
25℃
100
50
-55℃
4
8
12
16
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
150℃
250
ID=-50mA
100
0.05
0.1
0.15
0.2
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
VGS=-10V
6
300
0
300
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
2.4
2.2
2
1.8
1.6
VGS=-10V, ID=-50mA
1.4
1.2
1
0.8
0.6
0.4
0
0
0.03
0.06
0.09
0.12
0.15
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Junction Temperature
ZVP0545G
Document number: DS33390 Rev. 4 - 2
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-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (℃)
150
Figure 6. On-Resistance Variation with Junction
Temperature
June 2015
© Diodes Incorporated
300
3.4
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ZVP0545G
250
200
VGS=-10V, ID=-50mA
150
100
50
3.2
ID=-1mA
3
2.8
ID=-250µA
2.6
2.4
0
2.2
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
-50
VGS=0V
0.16
0.12
0.08
TJ=85℃
TJ=150℃
0.04
TJ=25℃
TJ=125℃
150℃
IDSS, LEAKAGE CURRENT (nA)
IS, SOURCE CURRENT (A)
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
10000
0.2
1000
125℃
100
85℃
10
25℃
1
TJ=-55℃
0
0
0.1
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
0
90
180
270
360
450
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakge Current vs
Voltage
1.5
1
100
RDS(ON)
Limited
f=1MHz
PW =1ms
Ciss
ID, DRAIN CURRENT (A)
CT, JUNCTION CAPACITANCE (pF)
-25
Coss
10
0.1
DC
PW =10s
PW =1s
0.01
TJ(Max)=150℃
PW =100ms
TC=25℃
VGS=4.5V
PW =10ms
Single Pulse
DUT on 1*MRP Board
Crss
1
PW =100μs
0.001
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
ZVP0545G
Document number: DS33390 Rev. 4 - 2
30
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1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
June 2015
© Diodes Incorporated
ZVP0545G
r(t), TRANSIENT THERMAL RESISTANCE
1
D=0.9
D=0.7
D=0.3
D=0.5
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=114℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
ZVP0545G
Document number: DS33390 Rev. 4 - 2
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ZVP0545G
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
Q
b1
C
E
E1
Gauge
Plane
0.25
Seating
Plane
e1
L
b
0°
e
A1
7°
7°
A
0°
-1
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
C1
Dimensions Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
Y2
Y
X
ZVP0545G
Document number: DS33390 Rev. 4 - 2
C
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ZVP0545G
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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ZVP0545G
Document number: DS33390 Rev. 4 - 2
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