510922035e8a5bd75113d9f04b777b77

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
CJ3439KDW
V(BR)DSS
20 V
N channel+P Channel MOSFET
ID
RDS(on)MAX
SOT-363
380mΩ@ 4.5V 450mΩ@ 2.5V 0.75A
[email protected] -20 V
520mΩ@-4.5V 700mΩ@-2.5V -0.66A
950mΩ(TYP)@-1.8V FEATURE
z Surface Mount Package
z Low RDS(on)
z Operated at Low Logic Level Gate Drive
z ESD Protected Gate
z Including a N-ch CJ3134K and a P-ch CJ3139K
(independently) In a Package
APPLICATION
z Load/ Power Switching
z Interfacing Switching
z Battery Management for Ultra Small Portable Electronics
z Logic Level Shift
Equivalent Circuit
MARKING
D1
6
1
S1
G2
5
2
G1
S2
4
3
D2
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
N-MOSFET
Drain-Source Voltage
VDS
20
V
Typical Gate-Source Voltage
VGS
±12
V
Continuous Drain Current (note 1)
ID
0.75
A
Pulsed Drain Current (tp=10us)
IDM
1.8
A
Drain-Source Voltage
VDS
-20
V
Typical Gate-Source Voltage
VGS
±12
V
Continuous Drain Current (note 1)
ID
-0.66
A
Pulsed Drain Current (tp=10us)
IDM
-1.2
A
RθJA
833
℃/W
P-MOSFET
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
TL
260
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
www.cj-elec.com
1
D,Mar,2016
MOSFET ELECTRICAL CHARACTERISTICS
N-ch MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
1
µA
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
±20
uA
VGS(th)
VDS =VGS, ID =250µA
Gate threshold voltage (note 2)
Drain-source on-resistance(note 2)
RDS(on)
20
V
0.35
1.1
V
VGS =4.5V, ID =0.65A
380
mΩ
VGS =2.5V, ID =0.55A
450
mΩ
VGS =1.8V, ID =0.45A
800
mΩ
1.2
V
120
Forward tranconductance(note 2)
gFS
VDS =10V, ID =0.8A
Diode forward voltage
VSD
IS=0.15A, VGS = 0V
1.6
S
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
79
VDS =16V,VGS =0V,f =1MHz
13
20
pF
pF
9
15
pF
Crss
SWITCHING CHARACTERISTICS (note 3,4)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
VGS=4.5V,VDS=10V,
ID=500mA,RGEN=10Ω
tf
6.7
ns
4.8
ns
17.3
ns
7.4
ns
P-ch MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
-1
µA
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
(note 2)
Drain-source on-resistance(note 2)
V(BR)DSS
VGS = 0V, ID =-250µA
IDSS
VDS =-20V,VGS = 0V
IGSS
VGS =±10V, VDS = 0V
VGS(th)
VDS =VGS, ID =-250µA
RDS(on)
-20
V
-0.35
VGS =-4.5V, ID =-1A
VGS =-2.5V, ID =-0.8A
VGS =-1.8V, ID =-0.5A
950
1.2
Forward tranconductance(note 2)
gFS
VDS =-10V, ID =-0.54A
Diode forward voltage
VSD
IS=-0.5A, VGS = 0V
±20
uA
-1.1
V
520
mΩ
700
mΩ
mΩ
S
-1.2
V
170
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
113
VDS =-16V,VGS =0V,f =1MHz
15
25
pF
pF
9
15
pF
SWITCHING CHARACTERISTICS (note 3, 4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
VGS=-4.5V,VDS=-10V,
ID=-200mA,RGEN=10Ω
tf
9
ns
5.8
ns
32.7
ns
20.3
ns
Notes :
1.Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300μs, duty cycle≤2%.
3. Switching characteristics are independent of operating junction temperature.
4. Graranted by design,not subject to producting.
www.cj-elec.com
2
D,Mar,2016
7\SLFDO&KDUDFWHULVWLFV
N-Channel MOS
Output Characteristics
4.5
Transfer Characteristics
4.0
5.0
VGS=4V,5V
Ta=25℃
VDS=3V
VGS=3V
3.5
VGS=2.5V
3.0
Pulsed
Pulsed
(A)
ID
3.5
3.0
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
4.0
VGS=2V
2.5
2.0
1.5
Ta=100℃
2.0
1.5
0.5
0.5
0.0
0.0
Ta=25℃
1.0
VGS=1.5V
1.0
2.5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
DRAIN TO SOURCE VOLTAGE
4.0
VDS
4.5
0.0
5.0
0
(V)
1
2
GATE TO SOURCE VOLTAGE
3
VGS
4
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
500
800
Pulsed
Ta=25℃
700
350
(m)
400
VGS=2.5V
300
VGS=4.5V
500
250
200
0.1
ID=0.65A
600
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(m)
VGS=1.8V
RDS(ON)
450
Pulsed
Ta=100℃
400
300
Ta=25℃
200
0.2
0.3
0.4
0.5
0.7
0.6
DRAIN CURRENT
0.8
ID
0.9
1.0
1.1
100
1.2
1
(A)
2
3
GATE TO SOURCE VOLTAGE
4
VGS
5
(V)
Threshold Voltage
IS —— VSD
2
0.8
Pulsed
1
VTH
0.1
Ta=100℃
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
0.7
Ta=25℃
0.6
ID=250uA
0.5
0.4
0.3
0.01
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
1.2
VSD (V)
1.4
1.6
0.2
25
50
75
JUNCTION TEMPERATURE
100
Tj
125
(℃ )
ZZZFMHOHFFRP3 D,Mar,2016
7\SLFDO&KDUDFWHULVWLFV
P-Channel MOS
Output Characteristics
-3.0
VGS=-4V,-5V
VDS=-3V
Ta=25℃
(A)
-2.0
VGS=-2.5V
DRAIN CURRENT
DRAIN CURRENT
Ta=25℃
ID
-2.0
ID
(A)
Pulsed
VGS=-3V
Pulsed
-2.5
Transfer Characteristics
-2.5
VGS=-2V
-1.5
-1.0
-1.0
VGS=-1.5V
-0.5
-0.5
-0.0
-0
-1
-2
-3
-4
DRAIN TO SOURCE VOLTAGE
VDS
-0.0
-5
-0
(V)
-1
Ta=25℃
Pulsed
Pulsed
800
700
VGS=-2.5V
600
(m)
VGS=-1.8V
900
800
RDS(ON)
900
700
ON-RESISTANCE
(m)
RDS(ON)
-4
(V)
1000
1000
500
ID=-1A
Ta=100℃
600
500
Ta=25℃
400
400
300
-0.5
-3
VGS
RDS(ON) —— VGS
RDS(ON) —— ID
1100
-2
GATE TO SOURCE VOLTAGE
1200
ON-RESISTANCE
Ta=100℃
-1.5
VGS=-4.5V
-0.6
-0.7
-0.8
-0.9
DRAIN CURRENT
-1.0
ID
-1.1
300
-1.2
-1
(A)
-2
-3
-4
GATE TO SOURCE VOLTAGE
VGS
-5
(V)
Threshold Voltage
IS —— VSD
-2
-0.8
Pulsed
-0.6
VTH
Ta=100℃
Ta=25℃
-0.1
-0.01
-0.0
-0.2
-0.4
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
(V)
-1
-0.6
-0.8
SOURCE TO DRAIN VOLTAGE
-1.0
VSD (V)
-1.2
-1.4
ID=-250uA
-0.4
-0.2
-0.0
25
50
75
JUNCTION TEMPERATURE
100
TJ
125
(℃ )
ZZZFMHOHFFRP4 D,Mar,2016
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Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.
0.150
2.000
2.200
1.150
1.350
2.150
2.4
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.00
0.006
0.079
0.087
0.045
0.053
0.085
0.09
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
627 6XJJHVWHG3DG/D\RXW
ZZZFMHOHFFRP5D,Mar,2016
6277DSHDQG5HHO
SOT-363 Tape and reel
SOT-363 Embossed Carrier Tape
P0
C
d
P1
Packaging Description:
SOT-363 parts are shipped in tape. The carrier
tape is made from a dissipative (carbon filled)
polycarbonate resin. The cover tape is a multilayer
film (Heat Activated Adhesive in nature) primarily
composed of polyester film, adhesive layer, sealant,
and anti-static sprayed agent. These reeled parts in
standard option are shipped with 3,000 units per 7"
or 17.8cm diameter reel. The reels are clear in color
and is made of polystyrene plastic (anti-static
coated).
B
F
W
E
A
P
A
A
A-A
Dimensions are in millimeter
Pkg type
A
B
C
d
E
F
P0
P
P1
W
SOT-363
2.25
2.55
1.20
Ø1.50
1.75
3.50
4.00
4.00
2.00
8.00
SOT-363 Tape Leader and Trailer
Leader Tape
Trailer Tape
50±2 Empty Pockets
100±2 Empty Pockets
Components
SOT-363 Reel
D
I
G
W2
3000
H
2500
2000
1500
1000
D2
D1
500
W1
Dimensions are in millimeter
Reel Option
D
D1
D2
G
H
I
W1
W2
7''Dia
Ø178.00
54.40
13.00
R78.00
R25.60
R6.50
9.50
12.30
G.W.(kg)
REEL
Reel Size
Box
Box Size(mm)
Carton
Carton Size(mm)
3000 pcs
7 inch
30,000 pcs
203×203×195
120,000 pcs
438×438×220
ZZZFMHOHFFRP6D,Mar,2016