a5ecf7966af377f7b6cba31d5b65453f

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL6602
P-channel and N-channel Complementary MOSFETS
P-channel
V(BR)DSS
SOT-23-6L
ID
RDS(on)MAX
135 mΩ@-10V -2.3A 185mΩ@-4.5V
-30V
265mΩ@-2.5V
N-channel
V(BR)DSS
ID
RDS(on)MAX
[email protected] 3.4A [email protected]
30V
[email protected]
GENERAL DESCRIPTION
The CJL6602 uses advanced trench technology to provide excellent RDS(on)
and low gate charge. The complementary MOSFETS form a high-speed
power inverter and suitable for a multitude of applications.
Equivalent Circuit
MARKING
L6602
Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
(1)
Continuous Drain Current
Pulsed Drain Current
(2)
Value
Symbol
Unit
N-channel
P-channel
VDS
30
-30
V
VGS
±12
±12
V
ID
3.4
-2.3
A
IDM
30
-30
A
PD
0.35
0.35
W
RθJA
357
357
℃/W
Junction Temperature
TJ
150
150
℃
Storage Temperature
Tstg
-55~+150
-55~+150
℃
Power Dissipation
Thermal Resistance from Junction to Ambient(1)
2
1.The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The value in any given application depends on the user's specific board design.The current ratings is based on
t≤10s thermal rasistance rating.
2. Repetitive rating,pulse with limited by junction temperature.
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A,Oct,2015
MOSFET ELECTRICAL CHARACTERISTICS
N-channel MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static characteristics
Drain-source breakdown voltage
V(BR) DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =24V,VGS = 0V
Gate-source leakage current (note1)
IGSS
VGS =±12V, VDS = 0V
Drain-source on-resistance (note1)
Forward tranconductance (note1)
Gate threshold voltage
Diode forward voltage (note1)
30
V
1
µA
±100
nA
VGS =10V, ID =3A
45
60
mΩ
RDS(on) VGS =4.5V, ID =3A
50
75
mΩ
VGS =2.5V, ID =2A
60
115
mΩ
1.4
V
1
V
gFS
VGS(th)
VSD
VDS =5V, ID =3A
VDS =VGS, ID =250µA
5
S
0.6
IS=1A,VGS=0V
Dynamic characteristics (note2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate resistance
Rg
VGS =0V,VDS =15V ,f =1MHz
VGS =0V,VDS =0V,f =1MHz
390
pF
54.5
pF
41
pF
3
Ω
4
ns
Switching Characteristics(note2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
VGS=10V,VDS=15V,
2
ns
RL=5Ω,RGEN=6Ω
22
ns
3
ns
tf
P-channel MOSFET Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static characteristics
Drain-source breakdown voltage
V(BR) DSS
VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-24V,VGS = 0V
Gate-source leakage current
IGSS
VGS =±12V, VDS = 0V
Drain-source on-resistance (note1)
RDS(on)
-30
-1
Gate threshold voltage
Diode forward voltage (note1)
gFS
VGS(th)
VDS
µA
±100
nA
VGS =-10V, ID =-2.3A
75
135
mΩ
VGS =-4.5V, ID =-2A
95
185
mΩ
140
265
mΩ
VGS =-2.5V, ID =-1A
Forward tranconductance (note1)
V
VDS =-5V, ID =-2.3A
4.5
VDS =VGS, ID =-250µA
-0.6
S
IS=-1A,VGS=0V
-1.4
V
-1
V
Dynamic characteristics (note2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate resistance
Rg
409
pF
55
pF
42
pF
12
Ω
13
ns
VGS=-10V,VDS=-15V,
10
ns
RL=6Ω,RGEN=6Ω
28
ns
13
ns
VGS =0V,VDS =-15V,f =1MHz
VGS =0V,VDS =0V,f =1MHz
Switching Characteristics (note2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Notes :
td(on)
tr
td(off)
tf
1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
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A,Oct,2015
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N-Channel-MOS
Output Characteristics
Transfer Characteristics
14
14
Ta=25℃
VDS=3V
VGS=3V,4V,5V,6V
Pulsed
Ta=25℃
10
8
DRAIN CURRENT
ID
(A)
10
ID
DRAIN CURRENT
Pulsed
12
(A)
12
VGS=2V
6
4
VGS=1.8V
2
0
8
Ta=100℃
6
4
2
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
VDS
0
0.0
5
(V)
0.5
1.0
1.5
2.0
GATE TO SOURCE VOLTAGE
VGS
2.5
3.0
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
70
160
Ta=25℃
Pulsed
Pulsed
(m)
60
50
ON-RESISTANCE
ON-RESISTANCE
120
RDS(ON)
VGS=2.5V
RDS(ON)
(m)
ID=3A
VGS=4.5V
40
Ta=100℃
80
40
Ta=25℃
VGS=10V
30
1
2
3
DRAIN CURRENT
ID
0
4
0
(A)
2
4
6
GATE TO SOURCE VOLTAGE
8
VGS
10
(V)
Threshold Voltage
IS —— VSD
4
1.5
(V)
Pulsed
VTH
Ta=100℃
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
1
Ta=25℃
0.1
0.01
0.0
0.4
0.8
SOURCE TO DRAIN VOLTAGE
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1.0
0.5
0.0
25
1.2
VSD (V)
ID=250uA
50
75
JUNCTION TEMPERATURE
3
100
Tj
125
( ℃)
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7\SLFDO&KDUDFWHULVWLFV
P-Channel-MOS
Output Characteristics
Transfer Characteristics
-14
-14
VGS=-4V,-5V,-6V
Ta=25℃
Pulsed
-12
-10
Ta=25℃
ID
(A)
VGS=-3V
-10
-8
DRAIN CURRENT
ID
(A)
-12
DRAIN CURRENT
VDS=-3V
Pulsed
VGS=-2.5V
-6
-4
-2
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
-4
VDS
Ta=100℃
-6
-4
-2
VGS=-2V
-0
-8
-0
-5
-0
(V)
-1
-2
-3
GATE TO SOURCE VOLTAGE
-4
VGS
-5
(V)
RDS(ON) —— VGS
RDS(ON) —— ID
200
300
Ta=25℃
Pulsed
Pulsed
(m)
RDS(ON)
100
VGS=-4.5V
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(m)
ID=-2.3A
VGS=-2.5V
150
VGS=-10V
50
0
-0.5
-1.0
-1.5
-2.0
-2.5
DRAIN CURRENT
-3.0
ID
-3.5
200
Ta=100℃
100
Ta=25℃
0
-4.0
-0
(A)
-2
-4
-6
GATE TO SOURCE VOLTAGE
-8
VGS
-10
(V)
Threshold Voltage
IS —— VSD
-1.6
-4
VTH
Ta=100℃
THRESHOLD VOLTAGE
-1
SOURCE CURRENT
IS (A)
(V)
Pulsed
Ta=25℃
-1.2
ID=-250uA
-0.8
-0.4
-0.1
-0.0
-0.4
-0.8
SOURCE TO DRAIN VOLTAGE
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-1.2
25
-1.6
VSD (V)
50
75
JUNCTION TEMPERATURE
4
100
Tj
125
( ℃)
A,Oct,2015
SOT-23-6L Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E1
E
e
e1
L
θ
Dimensions In Millimeters
Max.
Min.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
SOT-23-6L Suggested Pad Layout
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SOT-23-6L Tape and Reel
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