SSF6072G5
60V N-Channel MOSFET
Main Product Characteristics
VDSS
60V
RDS(on)
67mΩ (typ.)
ID
4A
6072
SSF6072G5
SOT-223
Features and Benefits
Marking and Pin
Schematic Diagram
Assignment
Advanced MOSFET process technology
Special designed for DC-DC and DC-AC converters, load switching and general
purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in DC-DC and DC-AC converters and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
4
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
3
IDM
Pulsed Drain Current②
16
PD @TC = 25°C
Power Dissipation③
3.3
W
VDS
Drain-Source Voltage
60
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
15
mJ
IAS
Avalanche Current @ L=0.3mH
10
A
-55 to +175
°C
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
RθJA
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Characteristics
Typ.
Max.
Units
Junction-to-ambient (t ≤ 10s) ④
—
38
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
35
℃/W
Page 1 of 7
Rev.1.1
SSF6072G5
60V N-Channel MOSFET
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
gfs
unless otherwise specified
Min.
Typ.
Max.
Units
60
—
—
V
—
67
100
—
76
115
1
—
2.5
—
—
1
—
—
10
—
—
100
—
—
-100
Forward Transconductance
1
—
—
Qg
Total gate charge
—
12
—
Qgs
Gate-to-Source charge
—
3.5
—
Qgd
Gate-to-Drain("Miller") charge
—
3.7
—
td(on)
Turn-on delay time
—
9.2
—
tr
Rise time
—
16.7
—
td(off)
Turn-Off delay time
—
35.4
—
tf
Fall time
—
8.6
—
Ciss
Input capacitance
—
582
—
Coss
Output capacitance
—
49
—
Crss
Reverse transfer capacitance
—
36
—
mΩ
V
μA
nA
S
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1.5A
VGS=5V,ID = 1.5A
VDS = VGS, ID = 250μA
VDS = 60V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
VDS = 15 V ID = 1.5A
ID = 4A,
nC
VDS=40V,
VGS =10V
ns
VGS=10V, VDS=25V,
RGEN=50Ω，ID = 1.2A,
VGS = 0V
pF
VDS = 30V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
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Min.
Typ.
Max.
Units
—
—
4
A
—
—
16
A
—
—
1.5
V
Page 2 of 7
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=4A, VGS=0V
Rev.1.1
SSF6072G5
60V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 7
Rev.1.1
SSF6072G5
60V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Typical Capacitance Vs. Drain-to-Source Voltage
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Figure 4: Normalized On-Resistance Vs. Case
Case Temperature
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Temperature
Page 4 of 7
Rev.1.1
SSF6072G5
60V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Maximum Effective Transient Thermal
Temperature
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Impedance, Junction-to-Case
Page 5 of 7
Rev.1.1
SSF6072G5
60V N-Channel MOSFET
Mechanical Data
SOT-223 Dimensions in Millimeters (UNIT: mm)
Notes：
① Dimensions are inclusive of plating
② Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 6 mils.
③ Dimension L is measured in gauge plane.
④ Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 6 of 7
Rev.1.1
SSF6072G5
60V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF6072G5
Package (Available)
SOT-223
Operating Temperature Range
C : -55 to 175ºC
Devices per Unit
Package
Type
Units/ Tube
Tubes/
Inner Box
Units/
Inner Box
Inner Boxes/
Carton Box
Units/
Carton Box
SOT-223
2500pcs
2pcs
5000pcs
8pcs
40000pcs
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ or 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=125℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 7 of 7
Rev.1.1