SSF2300A

SSF2300A
20V N-Channel MOSFET
DESCRIPTION
D
The SSF2300A uses advanced trench technology to
provide excellent R DS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
G
S
Schematic Diagram
GENERAL FEATURES
● V DS = 20V,ID = 4.5A
R DS(ON) < 50mΩ @ VGS=2.5V
R DS(ON) < 40mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
●Power management
SOT-23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
2300A
SSF2300A
SOT-23
Ø180mm
8 mm
3000 units
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
20
V
Gate-Source Voltage
V GS
±10
V
ID
4.5
A
IDM
16
A
PD
1.2
W
TJ,TSTG
-55 To 150
℃
R θJA
140
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Suzhou Goodark Electronics Co., Ltd
BVDSS
VGS=0V ID=250μA
Page 1 of 6
20
V
Rev. 2.0
SSF2300A
20V N-Channel MOSFET
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±10V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
V DS=VGS,ID=250μA
0.7
1.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=2.5V, ID=4A
35
50
mΩ
VGS=4.5V, ID=4.5A
28
40
mΩ
VDS=10V,ID=4.5A
8
S
500
PF
250
PF
90
PF
7
nS
55
nS
16
nS
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
0.5
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
V DS=10V,VGS=0V,
F=1.0MHz
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD=10V, R L = 2.8 Ω
VGS=4.5V,RGEN=6Ω,
ID=3.6A,
Turn-Off Fall Time
tf
10
nS
Total Gate Charge
Qg
10
nC
Gate-Source Charge
Qgs
2.3
nC
Gate-Drain Charge
Qgd
2.9
nC
V DS=10V,ID=4.2A,VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1.3A
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Suzhou Goodark Electronics Co., Ltd
Page 2 of 6
Rev. 2.0
SSF2300A
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
Vdd
td(on)
Rl
Vin
Vgs
Rgen
toff
tf
td(off)
90%
Vout
D
VOUT
90%
INVERTED
G
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 2: Switching Waveforms
PD Power(W)
ID- Drain Current (A）
Figure 1: Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Rdson On-Resistance(mΩ)
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
Suzhou Goodark Electronics Co., Ltd
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
Page 3 of 6
Rev. 2.0
SSF2300A
ID- Drain Current (A)
Normalized On-Resistance
20V N-Channel MOSFET
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(mΩ)
Figure 7 Transfer Characteristics
Vds Drain-Source Voltage (V)
Figure 9 RDS(ON) vs VGS
Figure 10 Capacitance vs VDS
Vgs Gate-Source Voltage (V)
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 11 Gate Charge
Suzhou Goodark Electronics Co., Ltd
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
Page 4 of 6
Rev. 2.0
SSF2300A
ID- Drain Current (A)
20V N-Channel MOSFET
Vds Drain-Source Voltage (V)
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Suzhou Goodark Electronics Co., Ltd
Page 5 of 6
Rev. 2.0
SSF2300A
20V N-Channel MOSFET
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Suzhou Goodark Electronics Co., Ltd
Page 6 of 6
Rev. 2.0