BSS138

BSS138
50V N-Channel MOSFET
GENERAL FEATURES
● VDS = 50V,ID = 0.22A
RDS(ON) < 6Ω @ VGS=4.5V
RDS(ON) < 3.5Ω @ VGS=10V
ESD Rating:1000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Schematic Diagram
APPLICATIONS
●Direct Logic-Level Interface: TTL/CMOS
●Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
●Battery Operated Systems
●Solid-State Relays
Marking and Pin Assignment
SOT-23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
S138
BSS138
SOT-23
Ø180mm
Tape Width
Quantity
8 mm
3000 units
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
50
V
Gate-Source Voltage
V GS
±20
V
ID
0.22
ID(70℃)
0.18
IDM
0.88
A
PD
0.43
W
TJ,TSTG
-55 To 175
℃
R θJA
350
℃/W
Drain [email protected] Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
A
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
OFF CHARACTERISTICS
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Page 1 of 7
Rev.2.2
Unit
BSS138
50V N-Channel MOSFET
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=50V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
10
uA
BVGSO
V DS=0V, IG=±250uA
±20
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=1mA
0.8
Drain-Source On-State Resistance
RDS(ON)
Gate-Source Breakdown Voltage
50
V
V
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
1.5
VGS=10V, ID=0.22A
3.5
VGS=4.5V, ID=0.22A
6
VDS=10V,ID=0.22A
0.1
V
Ω
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
30
VDS=25V,VGS=0V,
F=1.0MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
6
Turn-on Delay Time
td(on)
2.6
Turn–On Rise Time
tr
Turn-Off Delay Time
td(off)
PF
15
SWITCHING CHARACTERISTICS (Note 4)
VDD=30V,VGS=10V,
R GEN=6Ω,ID=0.22A
9
Turn–Off Fall Time
tf
6
Total Gate Charge
Qg
1.7
Gate–Source Charge
Qgs
Gate–Drain Charge
Qgd
VDS=25V,ID=0.22A,VGS=10V
nS
20
2.4
nC
0.1
0.4
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=0.44A
1.4
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 7
Rev.2.2
V
BSS138
50V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Vgs
Rgen
td(on)
Rl
Vin
ton
tr
Vout
D
90%
VOUT
G
toff
tf
td(off)
90%
INVERTED
10%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
PD Power(W)
ID- Drain Current (A)
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
ID- Drain Current (A)
Rdson On-Resistance(Ω)
Figure 4 Drain Current
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
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Figure 6 Drain-Source On-Resistance
Page 3 of 7
Rev.2.2
BSS138
ID- Drain Current (A)
Normalized On-Resistance
50V N-Channel MOSFET
Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Rdson On-Resistance(Ω)
Figure 7 Transfer Characteristics
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Is- Reverse Drain Current (A)
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 11 Gate Charge
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Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
Page 4 of 7
Rev.2.2
BSS138
ID- Drain Current (A)
50V N-Channel MOSFET
Vds Drain-Source Voltage (V)
Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Figure 13
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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Page 5 of 7
Rev.2.2
BSS138
50V N-Channel MOSFET
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT: mm)
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions in Millimeters
MIN.
MAX.
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
2.000
0.550REF
0.300
0.500
0°
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 6 of 7
Rev.2.2
BSS138
50V N-Channel MOSFET
SOT 23 Tape and Reel Information
Dimensions in Millimeters (UNIT: mm)
NOTES:
1.
2.
3.
All dimensions are in millimeters.
10 Sprocket hole pitch cumulative tolerance ±0.20MAX
General tolerance ±0.25
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Page 7 of 7
Rev.2.2