BSS138 50V N-Channel MOSFET GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON) < 6Ω @ VGS=4.5V RDS(ON) < 3.5Ω @ VGS=10V ESD Rating：1000V HBM ● High Power and current handing capability ● Lead free product ● Surface Mount Package Schematic Diagram APPLICATIONS ●Direct Logic-Level Interface: TTL/CMOS ●Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. ●Battery Operated Systems ●Solid-State Relays Marking and Pin Assignment SOT-23 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size S138 BSS138 SOT-23 Ø180mm Tape Width Quantity 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 50 V Gate-Source Voltage V GS ±20 V ID 0.22 ID(70℃) 0.18 IDM 0.88 A PD 0.43 W TJ,TSTG -55 To 175 ℃ R θJA 350 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range A THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max OFF CHARACTERISTICS www.goodark.com Page 1 of 7 Rev.2.2 Unit BSS138 50V N-Channel MOSFET Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=50V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V 10 uA BVGSO V DS=0V, IG=±250uA ±20 Gate Threshold Voltage VGS(th) VDS=VGS,ID=1mA 0.8 Drain-Source On-State Resistance RDS(ON) Gate-Source Breakdown Voltage 50 V V ON CHARACTERISTICS (Note 3) Forward Transconductance gFS 1.5 VGS=10V, ID=0.22A 3.5 VGS=4.5V, ID=0.22A 6 VDS=10V,ID=0.22A 0.1 V Ω S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss 30 VDS=25V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 6 Turn-on Delay Time td(on) 2.6 Turn–On Rise Time tr Turn-Off Delay Time td(off) PF 15 SWITCHING CHARACTERISTICS (Note 4) VDD=30V,VGS=10V, R GEN=6Ω，ID=0.22A 9 Turn–Off Fall Time tf 6 Total Gate Charge Qg 1.7 Gate–Source Charge Qgs Gate–Drain Charge Qgd VDS=25V,ID=0.22A,VGS=10V nS 20 2.4 nC 0.1 0.4 DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.44A 1.4 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 7 Rev.2.2 V BSS138 50V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin ton tr Vout D 90% VOUT G toff tf td(off) 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit PD Power(W) ID- Drain Current (A） Figure 2:Switching Waveforms TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 4 Drain Current ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS www.goodark.com Figure 6 Drain-Source On-Resistance Page 3 of 7 Rev.2.2 BSS138 ID- Drain Current (A) Normalized On-Resistance 50V N-Channel MOSFET Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(Ω) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Is- Reverse Drain Current (A) Vgs Gate-Source Voltage (V) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge www.goodark.com Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward Page 4 of 7 Rev.2.2 BSS138 ID- Drain Current (A) 50V N-Channel MOSFET Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 5 of 7 Rev.2.2 BSS138 50V N-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 6 of 7 Rev.2.2 BSS138 50V N-Channel MOSFET SOT 23 Tape and Reel Information Dimensions in Millimeters (UNIT: mm) NOTES： 1. 2. 3. All dimensions are in millimeters. 10 Sprocket hole pitch cumulative tolerance ±0.20MAX General tolerance ±0.25 www.goodark.com Page 7 of 7 Rev.2.2