AO7600 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO7600 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected. n-channel VDS (V) = 20V ID = 0.9A (VGS=4.5V) p-channel -20V -0.6A (VGS=-4.5V) RDS(ON) < 300mΩ (VGS=4.5V) < 350mΩ (VGS=2.5V) < 450mΩ (VGS=1.8V) RDS(ON) < 550mΩ (VGS=-4.5V) < 700mΩ (VGS=-2.5V) < 950mΩ (VGS=-1.8V) SC70-6L (SOT-363) Pin1 Bottom View Top View D2 D1 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 G2 G1 S2 S1 n-channel p-channel Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Max n-channel 20 Max p-channel -20 Gate-Source Voltage VGS Continuous Drain Current TA=25°C A TA=70°C 0.9 -0.6 ID 0.7 -0.48 Pulsed Drain Current B IDM 5 -3 TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range ±8 Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Rev 5: April 2015 ±8 V A 0.3 0.3 0.19 0.19 -55 to 150 -55 to 150 PD TJ, TSTG Units V Symbol RθJA RθJL RθJA RθJL www.aosmd.com W °C Device n-ch n-ch n-ch Typ 360 400 300 Max 415 460 350 Units °C/W °C/W °C/W p-ch p-ch p-ch 360 400 300 415 460 350 °C/W °C/W °C/W Page 1 of 8 N-Channel: Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C 5 25 µA 0.9 V 181 300 253 330 VGS=2.5V, ID=0.75A 237 350 mΩ VGS=1.8V, ID=0.7A 317 450 mΩ 1 V 0.4 A VDS=0V, VGS=±8V VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 5 VGS=4.5V, ID=0.9A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=0.8A 2.6 VSD Diode Forward Voltage IS=0.5A,VGS=0V 0.69 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 101 VGS=0V, VDS=10V, f=1MHz Gate Source Charge VGS=4.5V, VDS=10V, ID=0.8A mΩ S 120 17 pF pF 14 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs µA 0.75 Gate-Body leakage current Gate Threshold Voltage Coss Units V VDS=16V, VGS=0V VGS(th) Static Drain-Source On-Resistance Max 20 IGSS RDS(ON) Typ pF 3 4 1.57 1.9 Ω nC 0.13 nC Qgd Gate Drain Charge 0.36 nC tD(on) Turn-On DelayTime 3.2 ns tr Turn-On Rise Time 4 ns tD(off) Turn-Off DelayTime 15.5 ns tf trr Turn-Off Fall Time IF=0.8A, dI/dt=100A/µs 6.7 Qrr Body Diode Reverse Recovery Charge IF=0.8A, dI/dt=100A/µs 1.6 Body Diode Reverse Recovery Time VGS=5V, VDS=10V, RL=12.5Ω, RGEN=6Ω 2.4 ns 8.1 ns nC 1in 2 A: The value of R θJA is measured with the device mounted on FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: April 2015 www.aosmd.com Page 2 of 8 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 10 10V 8V VDS=5V 5V 8 3 4V 125°C 3.5V ID(A) ID (A) 6 25°C 3V 4 2 2.5V 1 VGS=2V 2 0 0 0 1 2 3 4 5 0 0.5 VDS (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 480 1.8 VGS=1.8V 440 Normalized On-Resistance VGS=1.8V 400 RDS(ON) (mΩ) 1 360 320 VGS=2.5V 280 240 VGS=4.5V 200 160 1.6 VGS=2.5V ID=0.75A ID=0.7A 1.4 VGS=4.5V 1.2 ID=0.9A 1 0.8 0 1 2 3 4 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 500 1E+01 460 1E+00 125° ID=0.9A 380 1E-01 340 300 IS (A) RDS(ON) (mΩ) 420 125° 1E-02 25° 260 1E-03 220 25° 180 1E-04 140 1 2 3 4 5 6 7 8 1E-05 0.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev 5: April 2015 www.aosmd.com 0.4 0.8 1.2 1.6 2.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 8 N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 5 VDS=10V ID=0.9A Capacitance (pF) VGS (Volts) 4 3 2 150 Ciss 100 Coss Crss 50 1 0 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 TJ(Max)=150°C, RDS(ON) limited TJ(Max)=150° C 100µs 10ms 1.0 Power (W) ID (Amps) 12 1ms 0.1s 1s 10s 8 4 DC 0 0.001 0.0 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=415°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 20 16 10µs 0.1 15 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev 5: April 2015 www.aosmd.com Page 4 of 8 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C -5 ±10 µA V 415 550 542 700 VGS=-2.5V, ID=-0.5A 590 700 mΩ VGS=-1.8V, ID=-0.4A 700 950 mΩ VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -3 VGS=-4.5V, ID=-0.6A TJ=125°C gFS Forward Transconductance VDS=-5V, ID=-0.6A VSD Diode Forward Voltage IS=-0.5A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge A 1.7 -0.86 114 VGS=0V, VDS=-10V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-0.6A mΩ S -1 V -0.4 A 140 17 pF pF 14 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Qgs µA -0.9 VDS=0V, VGS=±8V Gate Threshold Voltage Coss Units -0.6 Gate-Body leakage current VGS(th) Static Drain-Source On-Resistance Max V VDS=-16V, VGS=0V IGSS RDS(ON) Typ pF 12 17 1.44 1.8 Ω nC 0.14 nC Qgd Gate Drain Charge 0.35 nC tD(on) Turn-On DelayTime 6.5 ns 6.5 ns 18.2 ns VGS=-4.5V, VDS=-10V, RL=16.7Ω, RGEN=3Ω tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-0.6A, dI/dt=100A/µs 10 Qrr Body Diode Reverse Recovery Charge IF=-0.6A, dI/dt=100A/µs 3 Body Diode Reverse Recovery Time 5.5 ns 13 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any agiven givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thet t ≤≤10s 10sthermal thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 80 µs µs pulses, pulses, duty duty cycle cycle 0.5% 0.5% max. max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: April 2015 www.aosmd.com Page 5 of 8 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 6 -6V -10V 25° -4.5V VDS=-5V -4V 3 125°C -3.5V -ID(A) -ID (A) 4 -3V 2 -2.5V 2 1 VGS=-2.0V 0 0 0 1 2 3 4 5 0 0.5 900 1.5 2 2.5 3 3.5 4 4.5 1.6 VGS=-1.8V Normalized On-Resistance VGS=-1.8V 800 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 700 VGS=-2.5V 600 500 VGS=-4.5V 400 300 ID=-0.4A 1.4 VGS=-2.5V ID=-0.5A 1.2 VGS=-4.5V ID=-0.6A 1 0.8 0 1 2 3 4 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 900 1.0E+00 ID=-0.6A 800 1.0E-01 1.0E-02 600 -IS (A) RDS(ON) (mΩ) 125°C 700 125° 500 25°C 1.0E-03 1.0E-04 25° 400 1.0E-05 300 0 2 4 6 8 10 1.0E-06 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev 5: April 2015 www.aosmd.com 0.0 0.4 0.8 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics Page 6 of 8 P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 5 VDS=-10V ID=-0.6A Capacitance (pF) -VGS (Volts) 4 3 2 1 0 0.0 0.5 1.0 1.5 Ciss 150 100 Coss 50 Crss 0 2.0 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100µs 10 10ms 0.1s 1s 10s 20 TJ(Max)=150° C 12 Power (W) -ID (Amps) 1ms 0.10 15 14 TJ(Max)=150°C, TA=25°C 1.00 10 -VDS (Volts) Figure 8: Capacitance Characteristics 10.00 RDS(ON) limited 5 DC 8 6 4 0.01 2 0 0.001 0.00 0.1 1 10 100 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=415°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Rev 5: April 2015 www.aosmd.com Page 7 of 8 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveform s RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 5: April 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 8 of 8