Datasheet

AOC3862
12V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
• Trench Power MOSFET technology
• Low RSS(ON)
• With ESD protection to improve battery performance and safety
• Common drain configuration for design simplicity
• RoHS and Halogen-Free Compliant
Applications
VSS
12V
RSS(ON) (at VGS=4.5V)
< 3mΩ
RSS(ON) (at VGS=4.0V)
< 3.1mΩ
RSS(ON) (at VGS=3.8V)
< 3.2mΩ
RSS(ON) (at VGS=3.1V)
< 3.5mΩ
RSS(ON) (at VGS=2.5V)
< 4.4mΩ
Typical ESD protection
HBM Class 2
• Battery protection switch
• Mobile device battery charging and discharging
AlphaDFN 3.55x1.77_6
Top View
D2
D1
Bottom View
Bottom View
Top View
3
1
Pin1
S1
G1
S1
S2
G2
S2
G2
G1
Pin1
4
6
S2
S1
Pin1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOC3862
AlphaDFN 3.55x1.77_6
Tape & Reel
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Source-Source Voltage
Symbol
VSS
Gate-Source Voltage
Source Current(DC) Note1
Power Dissipation
V
VGS
±8
IS
27
100
TA=25°C
ISM
PD
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Symbol
t ≤ 10s
Maximum Junction-to-Ambient
RθJA
Steady-State
Maximum Junction-to-Ambient
Note 1. Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board.
Note 2. PW <10 µs pulses, duty cycle 1% max.
Rev.1.0: April 2016
Units
V
TA=25°C
Source Current(Pulse) Note2
Note1
Rating
12
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A
2.5
W
-55 to 150
°C
Typical
40
50
Units
°C/W
°C/W
Page 1 of 5
AOC3862
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVSSS
Source-Source Breakdown Voltage
Conditions
Min
Typ
Max
IS=250µA, VGS=0V
Test Circuit 6
VSS=12V, VGS=0V
Test Circuit 1
1
5
Units
12
V
ISSS
Zero Gate Voltage Source Current
IGSS
VGS(th)
Gate leakage current
VSS=0V, VGS=±8V
TJ=55°C
Test Circuit 2
±10
µA
Gate Threshold Voltage
VSS=VGS, IS=250µA
Test Circuit 3
0.4
0.8
1.2
V
VGS=4.5V, IS=5A
Test Circuit 4
1.7
2.38
3.0
2.3
3.3
4.1
VGS=4.0V, IS=5A
TJ=125°C
Test Circuit 4
1.75
2.45
3.1
mΩ
VGS=3.8V, IS=5A
Test Circuit 4
1.8
2.5
3.2
mΩ
VGS=3.1V, IS=5A
Test Circuit 4
1.9
2.7
3.5
mΩ
VGS=2.5V, IS=5A
Test Circuit 4
2.2
3.2
4.4
mΩ
1
V
RSS(ON)
Static Source to Source On-Resistance
gFS
Forward Transconductance
VSS=5V, IS=5A
Test Circuit 3
50
VFSS
Forward Source to Source Voltage
IS=1A,VGS=0V
Test Circuit 5
0.65
DYNAMIC PARAMETERS
Rg
Gate resistance
f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VG1S1=4.5V, VSS=6V, IS=5A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VG1S1=4.5V, VSS=6V, RL=1.2Ω,
RGEN=3Ω
Test Circuit8
µA
mΩ
S
1.2
KΩ
46
nC
2.5
µs
5.5
µs
4
µs
11
µs
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT
DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2016
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AOC3862
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10
1.5V
8
VDS=5V
8
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
6
IS(A)
IS (A)
6
4
125°C
4
25°C
2
2
VGS=1.0V
0
0
0
1
2
3
4
0
5
0.5
1.5
2
VGS(Volts)
Figure 2: Transfer Characteristics
VSS (Volts)
Figure 1: On-Region Characteristics
5
1.6
Normalized On-Resistance
VGS=2.5V
4
VGS=3.1V
RSS(ON) (mΩ)
1
3
2
VGS=4.0V
VGS=4.5V
VGS=3.8V
1
VGS=4.5V
IS=5A
1.4
VGS=4.0V
IS=5A
VGS=3.8V
IS=5A
1.2
VGS=3.1V
IS=5A
1
VGS=2.5V
IS=5A
0.8
0
0
2
4
6
8
0
10
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
IS (A)
Figure 3: On-Resistance vs. Source Current and
Gate Voltage
10
1.0E+01
IS=5A
1.0E+00
1.0E-01
6
IS (A)
RSS(ON) (mΩ)
8
125°C
125°C
1.0E-02
4
1.0E-03
2
25°C
1.0E-04
25°C
0
1.0E-05
0
1
2
3
4
5
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.1.0: April 2016
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0.0
0.2
0.4
0.6
0.8
1.0
VFSS (Volts)
Figure 6: Forward Source to Source Characteristics
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AOC3862
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VSS=6V
IS=5A
VGS (Volts)
4
3
2
1
0
0
10
20
30
40
50
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
1000.0
10µs
10µs
100.0
RSS(ON)
limited
100
100µs
Power (W)
IS (Amps)
TJ(Max)=150°C
TA=25°C
10.0
1ms
10ms
1.0
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.01
10
1
DC
0.1
1
VSS (Volts)
10
0.1
1E-050.00010.001 0.01
100
ZθJA Normalized Transient
Thermal Resistance
1
10
100 1000
Pulse Width (s)
Figure 9: Single Pulse Power Rating Junction-toAmbient (Note1)
VGS> or equal to 2.5V
Figure 8: Maximum Forward Biased Safe
Operating Area (Note1)
10
0.1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Normalized Maximum Transient Thermal Impedance (Note1)
Rev.1.0: April 2016
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Page 4 of 5
AOC3862
TEST CIRCUIT 1 Isss
TEST CIRCUIT 2 Igss1,2
POSITIVE VSS FOR ISSS+
POSITIVE VGS FOR IGSS1+
S2
NEGATIVE VSS FOR ISSS-
S2
NEGATIVE VGS FOR IGSS1When FET1 is measured
between GATE and SOURCE
G2
A
G2
of FET2 are shorted
D2
D2
D1
D1
VSS
G1
G1
A
VG
S1
TEST CIRCUIT 3 Vgs(off)
S1
TEST CIRCUIT 4 Rss(on)
S2
S2
When FET1 is measured
Vss/Is
between GATE and SOURCE
of FET2 are shorted
G2
G2
A
Is
D2
D2
D1
D1
VSS
G1
G1
V
VSS
VGS
VGS
S1
TEST CIRCUIT 5 VF(SS)1,2
S1
TEST CIRCUIT 6 BVDSS
POSITIVE VSS FOR ISSS+
NEGATIVE VSS FOR ISSS-
S2
S2
4.5V
When FET1 measured
G2
G2
IF
FET2 VGS=4.5V
Is
D2
D2
D1
D1
G1
G1
V
V
VSS
VGS=0
S1
S1
TEST CIRCUIT 8
Switching time
TEST CIRCUIT 7 BVGSO1,2
POSITIVE VSS FOR ISSS+
NEGATIVE VSS FOR ISSS-
S2
Vout
S2
When FET1 is measured
between GATE and SOURCE
G2
of FET2 are shorted
G2
D2
D2
D1
D1
Vin
G1
G1
V
IG
Rev.1.0: April 2016
S1
S1
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Page 5 of 5