ROHM RB162L

Data Sheet
Schottky Barrier Diode
RB162L-60
Dimensions (Unit : mm)
Land size figure (Unit : mm)
2.0
2.0
Applications
General rectification
4.2
Features
1) Small power mold type. (PMDS)
2) High switching speed
3) Low forward voltage
PMDS
Construction
Silicon epitaxial planer
Structure
Taping dimensions (Unit : mm)
2.0±0.05
0.3
φ1.55±0.05
12±0.2
5.5±0.05
5.3±0.1
0.05
9.5±0.1
1.75±0.1
4.0±0.1
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (Tl=25C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Symbol
VRM
VR
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics (Tj=25C)
Parameter
Conditions
Limits
Unit
D0.5
Direct voltage
Glass epoxy substrate mounted
R-road, 60Hz half sin wave
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
60
60
V
V
1.0
A
20
A
150
40 to 150
C
C
Symbol
VF
Conditions
IF=1.0A
Min.
Typ.
Max.
Forward voltage
-
0.54
0.65
V
Reverse current
IR
VR=60V
-
4
100
μA
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Unit
2011.04 - Rev.A
Data Sheet
RB162L-60
1
Tj=150C
0.1
Tj=25C
Tj=25C
10000
f=1MHz
100
1000
Tj=125C
100
Tj=25C
10
1
0.01
10
1
0.1
0
100
200
300
400
500
600
700
0
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
10
20
30
40
50
0
60
510
500
AVE : 515.2mV
490
15
20
25
30
200
Tj=25C
VR=60V
n=20pcs
10
Tj=25C
f=1MHz
VR=0V
n=10pcs
190
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
520
REVERSE CURRENT : I R(A)
530
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
100
Tj=25C
IF =1.0A
n=20pcs
540
5
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
550
180
170
160
150
AVE : 168.0pF
140
130
120
AVE : 6.0A
110
480
100
1
IR DISPERSION MAP
VF DISPERSION MAP
120
Ct DISPERSION MAP
100
8.3ms
80
60
AVE : 80.8A
40
20
REVERSE RECOVERY TIME : trr(ns)
30
1cyc
Ifsm
100
Tj=25C
IF=0.1A
IR=0.1A
Irr=0.1*IR
n=10pcs
20
10
AVE : 11.6ns
PEAK SURGE
FORWARD CURRENT : I FSM(A)
FORWARD VOLTAGE : VF(mV)
Tj=125C
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE CURRENT : IR(A)
FORWARD CURRENT : I F(A)
Tj=125C
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT : I FSM(A)
1000
100000
Tj=150C
Ability
10
Ratings
Ifsm
8.3ms
8.3ms
1cyc
0
1
0
1
trr DISPERSION MAP
IFSM DISRESION MAP
1000
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
PEAK SURGE
FORWARD CURRENT : I FSM(A)
Ability
100
10
Ratings
25
20
15
10
AVE : 5.0kV
5
1
1
10
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
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0
C=100pF
R=1.5k
C=200pF
R=0
ESD DISPERSION MAP
2/3
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
No break at 30kV
t
100
1000
30
Ifsm
10
NUMBER OF CYCLES
I FSM -CYCLE CHARACTERISTICS
100
Rth(j-a)
On glass-epoxy substrade
2
soldering land 2mm
Rth(j-l)
10
Rth(j-a)
On glass-epoxy substrade
2
soldering land 10mm
1
0.1
0.001
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
2011.04 - Rev.A
Data Sheet
RB162L-60
0A
0V
Io
VR
VR
t
D=t/T
VR=30V
T
Tj=150C
On glass-epoxy
substrate soldering land 10mm
t
1.4
D=0.8
D.C.
1.2
1
0.8
0.6
D=0.5
0.4
0.2
D.C.
1.6
1.4
D=0.5
1.2
D=0.8
1
0.8
half sin wave
0.6
0.4
0.2
half sin wave
0
30
60
90
120
150
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
Io
0V
VR
t
D=t/T
VR=30V
Tj=150C
T
D.C.
1.6
1.4
D=0.5
1.2
D=0.8
1
0.8
half sin wave
0.6
0.4
0.2
0
0
0A
1.8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
1.6
1.8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
D=t/T
VR=30V
T
Tj=150C
On glass-epoxy
substrate soldering land 2mm
1.8
Io
0A
0V
0
0
30
60
90
120
AMBIENT TEMPERATURE : Ta(C)
Derating Curve"(Io-Ta)
150
0
30
60
90
120
150
CASE TEMPARATURE : Tl(C)
Derating Curve"(Io-Tl)
1.4
D.C.
1.2
FORWARD POWER
DISSIPATION : Pf(W)
D=0.8
1
D=0.5
0.8
half sin wave
0.6
0.4
0.2
0
0
0.3
0.6
0.9
1.2
1.5
1.8
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
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2011.04 - Rev.A
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Notes
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R1120A