Datasheet

AOT7N65/AOTF7N65
650V, 7A N-Channel MOSFET
General Description
Product Summary
The AOT7N65 & AOTF7N65 have been fabricated using
an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
[email protected]
7A
RDS(ON) (at VGS=10V)
< 1.56Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOT7N65L & AOTF7N65L
TO-220
Top View
G
TO-220F
D
G
G
D
D
S
S
S
AOTF7N65
AOT7N65
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT7N65
Drain-Source Voltage
VDS
650
Gate-Source Voltage
±30
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
AOTF7N65
V
7
ID
Units
V
7*
4.4
4.4*
A
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
3.4
A
Repetitive avalanche energy C
EAR
173
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
EAS
dv/dt
347
5
mJ
V/ns
W
24
PD
38.5
0.3
TJ, TSTG
TL
Symbol
RθJA
RθCS
-55 to 150
W/ oC
°C
300
°C
AOT7N65
65
AOTF7N65
65
Units
°C/W
0.5
0.65
-3.25
°C/W
°C/W
Maximum Case-to-sink A
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev3:Feb 2012
192
1.5
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Page 1 of 6
AOT7N65/AOTF7N65
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
650
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
ID=250µA, VGS=0V, TJ=150°C
750
V
ID=250µA, VGS=0V
0.74
V/ oC
VDS=650V, VGS=0V
1
VDS=520V, TJ=125°C
10
±100
3
µA
4
4.5
nΑ
V
1.56
Ω
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=3.5A
1.3
gFS
Forward Transconductance
VDS=40V, ID=3.5A
8
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
7
A
ISM
Maximum Body-Diode Pulsed Current
24
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=520V, ID=7A
S
0.75
1
V
710
887
1060
pF
60
77
92
pF
5.5
7
9
pF
1.9
3.8
5.8
Ω
15
19
23
nC
4
4.9
6
nC
6.5
8.3
10
nC
tD(on)
Turn-On DelayTime
22
31
ns
tr
Turn-On Rise Time
47
66
ns
tD(off)
Turn-Off DelayTime
54
76
ns
tf
trr
Turn-Off Fall Time
37
52
ns
220
280
340
Qrr
Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V
3
4.2
5
ns
µC
Body Diode Reverse Recovery Time
VGS=10V, VDS=325V, ID=7A, RG=25Ω
IF=7A,dI/dt=100A/µs,VDS=100V
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.4A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev3: Feb 2012
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Page 2 of 6
AOT7N65/AOTF7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
12
10V
6.5V
10
8
6V
6
125°C
ID(A)
ID (A)
-55°C
VDS=40V
10
1
4
25°C
2
VGS=5.5V
0.1
0
0
5
10
15
20
25
30
2
4
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
3
Normalized On-Resistance
2.6
RDS(ON) (Ω
Ω)
2.2
VGS=10V
1.8
1.4
2.5
VGS=10V
ID=3.5A
2
1.5
1
0.5
0
1.0
0
2
4
6
8
10
12
-100
14
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.0E+02
1.0E+01
1.1
125°C
1.0E+00
IS (A)
BVDSS (Normalized)
10
1
25°C
1.0E-01
1.0E-02
2.2
1.0E-03
0.9
1.0E-04
0.8
1.0E-05
-100
-50
0
50
100
150
200
(oC)
TJ
Figure 5: Break Down vs. Junction Temperature
Rev3: Feb 2012
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT7N65/AOTF7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
1000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=520V
ID=7A
12
9
6
Coss
100
10
3
Crss
1
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
100
10µs
RDS(ON)
limited
100µs
1ms
1
10ms
DC
TJ(Max)=150°C
TC=25°C
0.1
10µs
10
ID (Amps)
10
ID (Amps)
0.1
30
RDS(ON)
limited
100µs
1ms
1
10ms
0.1s
1s
DC
0.1
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF7N65 (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT7N65 (Note F)
8
Current rating ID(A)
7
6
5
4
3
2
1
0
0
Rev3: Feb 2012
25
50
75
100
125
TCASE (°C)
Figure 11: Current De-rating (Note B)
150
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Page 4 of 6
AOT7N65/AOTF7N65
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=0.65°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Ton
0.01
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance for AOT7N65 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=3.25°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF7N65 (Note F)
Rev3: Feb 2012
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Page 5 of 6
AOT7N65/AOTF7N65
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev3: Feb 2012
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
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Page 6 of 6