AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary The AOT7N65 & AOTF7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 750V@150℃ 7A RDS(ON) (at VGS=10V) < 1.56Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT7N65L & AOTF7N65L TO-220 Top View G TO-220F D G G D D S S S AOTF7N65 AOT7N65 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT7N65 Drain-Source Voltage VDS 650 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C AOTF7N65 V 7 ID Units V 7* 4.4 4.4* A Pulsed Drain Current C IDM Avalanche Current C IAR 3.4 A Repetitive avalanche energy C EAR 173 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 347 5 mJ V/ns W 24 PD 38.5 0.3 TJ, TSTG TL Symbol RθJA RθCS -55 to 150 W/ oC °C 300 °C AOT7N65 65 AOTF7N65 65 Units °C/W 0.5 0.65 -3.25 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev3:Feb 2012 192 1.5 www.aosmd.com Page 1 of 6 AOT7N65/AOTF7N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Conditions Min ID=250µA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=250µA, VGS=0V, TJ=150°C 750 V ID=250µA, VGS=0V 0.74 V/ oC VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 ±100 3 µA 4 4.5 nΑ V 1.56 Ω RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A 1.3 gFS Forward Transconductance VDS=40V, ID=3.5A 8 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 7 A ISM Maximum Body-Diode Pulsed Current 24 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=520V, ID=7A S 0.75 1 V 710 887 1060 pF 60 77 92 pF 5.5 7 9 pF 1.9 3.8 5.8 Ω 15 19 23 nC 4 4.9 6 nC 6.5 8.3 10 nC tD(on) Turn-On DelayTime 22 31 ns tr Turn-On Rise Time 47 66 ns tD(off) Turn-Off DelayTime 54 76 ns tf trr Turn-Off Fall Time 37 52 ns 220 280 340 Qrr Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V 3 4.2 5 ns µC Body Diode Reverse Recovery Time VGS=10V, VDS=325V, ID=7A, RG=25Ω IF=7A,dI/dt=100A/µs,VDS=100V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3.4A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3: Feb 2012 www.aosmd.com Page 2 of 6 AOT7N65/AOTF7N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 12 10V 6.5V 10 8 6V 6 125°C ID(A) ID (A) -55°C VDS=40V 10 1 4 25°C 2 VGS=5.5V 0.1 0 0 5 10 15 20 25 30 2 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 3 Normalized On-Resistance 2.6 RDS(ON) (Ω Ω) 2.2 VGS=10V 1.8 1.4 2.5 VGS=10V ID=3.5A 2 1.5 1 0.5 0 1.0 0 2 4 6 8 10 12 -100 14 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1.0E+02 1.0E+01 1.1 125°C 1.0E+00 IS (A) BVDSS (Normalized) 10 1 25°C 1.0E-01 1.0E-02 2.2 1.0E-03 0.9 1.0E-04 0.8 1.0E-05 -100 -50 0 50 100 150 200 (oC) TJ Figure 5: Break Down vs. Junction Temperature Rev3: Feb 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT7N65/AOTF7N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 1000 Capacitance (pF) VGS (Volts) Ciss VDS=520V ID=7A 12 9 6 Coss 100 10 3 Crss 1 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 100 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 10µs RDS(ON) limited 100µs 1ms 1 10ms DC TJ(Max)=150°C TC=25°C 0.1 10µs 10 ID (Amps) 10 ID (Amps) 0.1 30 RDS(ON) limited 100µs 1ms 1 10ms 0.1s 1s DC 0.1 TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 1 10 100 1000 VDS (Volts) VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF7N65 (Note F) Figure 9: Maximum Forward Biased Safe Operating Area for AOT7N65 (Note F) 8 Current rating ID(A) 7 6 5 4 3 2 1 0 0 Rev3: Feb 2012 25 50 75 100 125 TCASE (°C) Figure 11: Current De-rating (Note B) 150 www.aosmd.com Page 4 of 6 AOT7N65/AOTF7N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=0.65°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT7N65 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=Tc+PDM.ZθJC.RθJC RθJC=3.25°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF7N65 (Note F) Rev3: Feb 2012 www.aosmd.com Page 5 of 6 AOT7N65/AOTF7N65 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev3: Feb 2012 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6