RFG50N05, RFP50N05 Data Sheet 50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFET’S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. July 1999 File Number 2873.3 Features • 50A, 50V • rDS(ON) = 0.022Ω • UIS Rating Curve (Single Pulse) • 175oC Operating Temperature Symbol D Formerly developmental type TA09772. G Ordering Information PART NUMBER PACKAGE BRAND S RFG50N05 TO-247 RFG50N05 RFP50N05 TO-220AB RFP50N05 NOTE: When ordering, include the entire part number. Packaging JEDEC STYLE TO-247 JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) 4-462 DRAIN (FLANGE) SOURCE DRAIN GATE CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RFG50N05, RFP50N05 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg RFG50N05, RFP50N05 50 50 50 120 ±20 132 0.88 Refer to UIS SOA Curve -55 to 175 UNITS V V A A V W W/ oC 300 260 oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 0.250µA, VGS = 0V (Figure 9) 50 - - V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 0.250µA (Figure 8) 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 1 A VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC - - 25 µA VGS = ±20V - - ±100 nA ID = 50A, VGS = 10V (Figure 7) - - 0.022 Ω VDD = 25V, ID ≈ 25A, RL = 1.0Ω, RGS = 6.67Ω, VGS = 10V (Figure 11) - - 100 ns - 15 - ns tr - 55 - ns td(OFF) - 60 - ns tf - 15 - ns Turn-Off Time t(OFF) - - 100 ns Total Gate Charge Qg(tot) VGS = 0-20V - - 160 nC Gate Charge at 10V Qg(10) VGS = 0-10V - - 80 nC Threshold Gate Charge Qg(th) VGS = 0-2V - - 6 nC Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current, Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IGSS rDS(ON) Turn-On Time t(ON) Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time Fall Time Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA VDD - 40V, ID = 50A RL = 0.8Ω, IG(REF) = 1.5mA (Figure 11) TO-220 - - 1.14 oC/W - - 62 oC/W 30 oC/W MAX UNITS TO-247 Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS TYP ISD = 50A - 1.5 V ISD = 50A, dlSD/dt = 100A/µs - 125 ns NOTES: 2. Pulsed test: pulse width ≤ 300µs duty cycle ≤ 2%. 3. Repetitive rating: pulse width is limited by maximum junction temperature. 4-463 MIN RFG50N05, RFP50N05 Unless Otherwise Specified 1.2 60 1.0 50 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 0.2 40 30 20 10 0 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 25 175 50 75 125 100 TC, CASE TEMPERATURE (Co) 150 175 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 1000 Tj = MAX RATED TC = 25oC 10 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) DC 1 0.1 10 1 Idm 100 Starting Tj = 25oC Starting Tj = 150oC 10 0.01 100 VDS, DRAIN TO SOURCE VOLTAGE (V) IDS(ON), DRAIN TO SOURCE CURRENT (A) ID, DRAIN CURRENT (A) VGS = 7V VGS = 8V 80 VGS = 6V 60 VGS = 5V 40 20 VGS = 4V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. SATURATION CHARACTERISTICS 4-464 10 1 FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING 120 VGS = 9V 0.1 tAV, TIME IN AVALANCHE (ms) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX o 100 TC = 25 C VGS = 10V If R = 0 tav = (L)(Ias)/(1.3 RATED BVdss - Vdd) If R ≠ 0 tav = (L/R) In[(Ias x R)/(1.3 RATED BVdss - Vdd) + 1] 5 120 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX -55oC 25oC 175oC 100 80 60 40 20 0 0 2.5 5 7.5 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. TRANSFER CHARACTERISTICS 10 RFG50N05, RFP50N05 Typical Performance Curves 2.5 2.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 50A NORMALIZED GATE TO SOURCE THRESHOLD VOLTAGE 2 1.5 1 0.5 -50 50 150 0 100 TJ, JUNCTION TEMPERATURE (Co) 1.2 0.8 0.4 -50 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 50 150 0 100 TJ, JUNCTION TEMPERATURE (Co) 200 FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 5000 ID = 250µA VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD 4000 1.6 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.8 0 0 2.0 VGS = VDS ID = 250µA 1.2 0.8 0.4 3000 CISS 2000 COSS 1000 CRSS 0 -50 50 150 0 100 TJ, JUNCTION TEMPERATURE (Co) 0 200 1 FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs. JUNCTION TEMPERATURE 10 VDS, DRAIN TO SOURCE VOLTAGE (V) VDD = BVDSS 12.5 GATE SOURCE VOLTAGE 8 VDD = BVDSS RL = 1Ω IG(REF) = 1.5mA VGS = 10V 25 6 4 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25 BVDSS 0.25BVDSS 2 DRAIN SOURCE VOLTAGE 0 0 I 20 G(REF) IG(ACT) t, TIME (µs) I 80 G(REF) IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260 FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 4-465 25 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 50 37.5 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 3 Unless Otherwise Specified (Continued) RFG50N05, RFP50N05 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN REQUIRED PEAK IAS + RG VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 13. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) VDS td(OFF) tf tr VDS 90% 90% RL VGS + - DUT 10% 10% 0 VDD 90% RGS VGS VGS 0 50% 10% FIGURE 14. SWITCHING TIME TEST CIRCUIT 50% PULSE WIDTH FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS VDD RL Qg(TOT) VDS VGS = 20V VGS Qg(10) + VDD DUT Ig(REF) VGS = 10V VGS - VGS = 2V 0 Qg(TH) Ig(REF) 0 FIGURE 16. GATE CHARGE TEST CIRCUIT 4-466 FIGURE 17. GATE CHARGE WAVEFORMS RFG50N05, RFP50N05 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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