A0 Vx122PA690M7 L750F70x D1 14

A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
VINcoDUAL E3
1200 V / 690 A
Features
VINco E3
● Low VC Esat with the new 7th gen Mitsubishi
chip generation
● Max. Junction temperature Tvjmax 175 °C
● Solid cover technology for higher reliability
● Industry standard housing
● Press-fit pin and pre-applied Phase Change
Thermal Interface Material available
Schematic
Target applications
● Industrial Drives
● Power Supply
● UPS
Types
● A0-VS122PA690M7-L750F70
● A0-VP122PA690M7-L750F70T
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
1200
V
678
A
1380
A
2065
W
Half-Bridge Switch
Collector-emitter voltage
Collector current
VCES
IC
Tj = Tjmax
Ts = 80 °C
Repetitive peak collector current
ICRM
tp limited by Tjmax
Total power dissipation
Ptot
Tj = Tjmax
Gate-emitter voltage
VGES
±20
V
Maximum junction temperature
Tjmax
175
°C
Copyright Vincotech
Ts = 80 °C
1
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
1200
V
546
A
1500
A
896
W
Half-Bridge Diode
Peak repetitive reverse voltage
Continuous (direct) forward current
VRRM
IF
Tj = Tjmax
Ts = 80 °C
Repetitive peak forward current
IFRM
Total power dissipation
Ptot
Maximum junction temperature
Tjmax
175
°C
Storage temperature
Tstg
-40…+125
°C
Operation temperature under switching condition
Tjop
-40…(Tjmax - 25)
°C
4000
V
Creepage distance
18,1
mm
Clearance
16,2
mm
Tj = Tjmax
Ts = 80 °C
Module Properties
Thermal Properties
Isolation Properties
Isolation voltage
Comparative Tracking Index
Copyright Vincotech
Visol
DC Test Voltage
CTI
tp = 2 s
> 200
2
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
VCE [V]
VGE [V]
VDS [V]
VGS [V]
VF [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Unit
Min
Typ
Max
5,4
6
6,6
25
1,54
1,9
125
1,74
150
1,80
Half-Bridge Switch
Static
Gate-emitter threshold voltage
VGE(th)
Collector-emitter saturation voltage
VCEsat
VGE = VCE
0,069
15
690
25
V
V
Collector-emitter cut-off current
ICES
0
1200
25
690
µA
Gate-emitter leakage current
IGES
20
0
25
1500
nA
Internal gate resistance
rg
0,66
Input capacitance
Cies
132000
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
Qg
0
10
25
3900
Ω
pF
1590
15
600
690
25
4500
nC
0,046
K/W
0,029
K/W
Thermal
Thermal resistance junction to case
Rth(j-c)
Thermal resistance case to sink
Rth(c-s)
phase-change
material
λ = 3,4 W/mK
Dynamic
Turn-on delay time
Rise time
td(on)
tr
Rgoff = 2 Ω
Rgon = 2 Ω
Turn-off delay time
td(off)
±15
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
Copyright Vincotech
tf
Eon
QrFWD = 54,8 µC
QrFWD = 88,9 µC
QrFWD = 94,6 µC
Eoff
3
600
685
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
752
768
758
122
144
141
524
557
574
57
89
88
89,877
122,444
125,037
48,689
70,087
64,737
ns
mWs
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
VCE [V]
VGE [V]
VDS [V]
VGS [V]
VF [V]
Value
IC [A]
ID [A]
IF [A]
Tj [°C]
Min
Unit
Typ
Max
1,70
1,87
2,2
Half-Bridge Diode
Static
Forward voltage
VF
Reverse leakage current
IR
750
1200
25
125
25
450
V
µA
Thermal
Thermal resistance junction to case
Rth(j-c)
Thermal resistance case to sink
Rth(c-s)
phase-change
material
λ = 3,4 W/mK
0,070
K/W
0,036
K/W
Dynamic
Peak recovery current
IRRM
Reverse recovery time
trr
Recovered charge
Qr
Reverse recovered energy
Erec
Peak rate of fall of recovery current
di/dt = 5557 A/µs
di/dt = 4738 A/µs ±15
di/dt = 6750 A/µs
(dirf/dt)max
600
685
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
317
344
358
368
517
541
54,754
88,890
94,624
18,371
31,246
29,901
1157
1025
938
25
5
A
ns
µC
mWs
A/µs
Thermistor
Rated resistance
R
Deviation of R100
ΔR/R
Power dissipation
R100 = 493 Ω
100
P
Power dissipation constant
-5
kΩ
+5
%
25
245
mW
25
1,4
mW/K
B-value
B(25/50)
Tol. ±2 %
25
3375
K
B-value
B(25/100)
Tol. ±2 %
25
3437
K
Vincotech NTC Reference
Copyright Vincotech
K
4
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output charact erist ics
Typical out put characteristics
I C = f(V CE)
I C = f(V CE)
2500
I C (A)
I C (A)
2500
VGE :
7V
8V
9V
2000
2000
10 V
11 V
12 V
13 V
14 V
15 V
1500
1500
16 V
17 V
1000
1000
500
500
0
0
0
1
2
3
4
0
5
1
2
tp =
250
µs
V GE =
15
V
25
T j:
3
4
5
V C E (V)
V C E (V)
°C
tp =
250
125 °C
Tj =
125
µs
150 °C
V GE from
7 V to 17 V in steps of 1 V
°C
Half-Bridge Diode Characteristics
figure 1.
FWD
Typical f orward characteristics
I F = f(V F)
IF (A)
700
600
500
400
300
200
100
0
0
0,5
1
1,5
2
2,5
3
VF (V)
tp =
250
µs
T j:
25
°C
125 °C
150 °C
Copyright Vincotech
5
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
R (Ω)
5000
4000
3000
2000
1000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
6
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical swit ching energy losses as a f unct ion of collect or current
Typical switching energy losses as a f unct ion of gat e resist or
E = f(I C)
E = f(R g)
400
E (mWs)
E ( mWs)
400
Eon
Eon
300
300
Eon
Eon
Eo n
Eo n
200
200
Eoff
Eoff
100
100
E o ff
0
Eoff
Eoff
Eo ff
0
0
200
400
600
800
1000
1200
1400
0
I C (A)
25
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
2
Ω
R goff =
2
Ω
T j:
°C
1
2
3
4
125 °C
150 °C
figure 3.
FWD
V GE =
±15
V
IC =
685
A
5
T j:
7
8
FWD
E rec = f(I c)
E rec = f(R g)
E (mWs)
Erec
Erec
9
125 °C
figure 4.
Typical reverse recovered energy loss as a f unct ion of gat e resist or
40
R g ( Ω)
°C
150 °C
Typical reverse recovered energy loss as a f unct ion of collect or current
E ( mWs)
6
25
With an inductive load at
600
V
V CE =
50
40
30
Erec
30
20
20
Erec
10
Erec
10
Erec
0
0
0
200
400
With an inductive load at
600
V
V CE =
V GE =
±15
V
R gon =
2
Ω
Copyright Vincotech
600
800
1000
T j:
125 °C
25
1200
0
1400
I C (A)
°C
1
2
3
With an inductive load at
600
V
V CE =
150 °C
7
V GE =
±15
V
IC=
685
A
4
5
6
T j:
125 °C
25
7
8
r g (Ω)
9
°C
150 °C
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical swit ching t imes as a f unct ion of collect or current
Typical switching t imes as a f unct ion of gat e resist or
t = f(I C)
t = f(R g)
10
1
t ( μs)
t ( μ s)
td(on)
td(off )
td(on)
tr
td(off )
1
tr
0,1
tf
0,1
tf
0,01
0,01
0
200
400
600
800
1000
1200
1400
0
I C (A)
(A)
With an inductive load at
150
°C
Tj=
1
2
3
V CE =
600
V
V CE =
600
V
V GE =
±15
V
V GE =
±15
V
IC =
685
A
R gon =
2
Ω
R goff =
2
Ω
4
5
6
7
8
9
r g (Ω)
With an inductive load at
150
°C
Tj =
figure 7.
FWD
figure 8.
FWD
t rr = f(I C)
t rr = f(R gon)
0,8
0,8
t rr (μs)
Typical reverse recovery time as a f unct ion of IGBT t urn on gat e resist or
t rr (μs)
Typical reverse recovery t ime as a f unct ion of collect or current
trr
trr
0,6
trr
trr
0,6
trr
trr
0,4
0,4
0,2
0,2
0
0
0
200
400
600
800
1000
1200
1400
0
I C (A)
At
600
V
V GE =
±15
V
R gon =
2
Ω
V CE=
Copyright Vincotech
25
T j:
1
2
3
4
5
6
7
8
9
R g on (Ω)
600
V
125 °C
°C
V GE =
±15
V
150 °C
IC=
685
A
At
8
V CE =
25
T j:
°C
125 °C
150 °C
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a f unction of collector current
Typical recoved charge as a f unct ion of IGBT t urn on gate resistor
Q r = f(I C)
Q r = f(R gon)
150
Q r (µC)
Q r (μ C)
120
120
Qr
Qr
90
Qr
60
90
Qr
Qr
60
Qr
30
30
At
0
0
0
200
400
600
800
1000
1200
1400
0
1
2
3
4
5
6
7
T j:
125 °C
8
I C (A)
600
V
V GE =
±15
V
R gon =
2
Ω
At
V CE =
25
T j:
600
V
125 °C
°C
V GE =
±15
V
150 °C
I C=
685
A
At
figure 11.
FWD
VCE=
25
°C
150 °C
figure 12.
FWD
Typical peak reverse recovery current current as a f unct ion of collect or current
Typical peak reverse recovery current as a f unct ion of IGBT t urn on gate resist or
I RM = f(I C)
I RM = f(R gon)
400
I R M (A)
I R M (A)
800
IR M
I RM
IRM
300
600
200
400
100
200
IRM
IRM
I RM
0
0
0
At
9
R g o n (Ω)
200
400
600
V
V GE =
±15
V
R gon =
2
Ω
V CE =
Copyright Vincotech
600
800
1000
25
T j:
1200
I C (A)
0
1400
1
2
3
4
5
6
7
8
9
R g o n (Ω)
°C
At
V CE =
600
V
125 °C
V GE =
±15
V
150 °C
IC=
685
A
9
25
T j:
°C
125 °C
150 °C
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rat e of f all of f orward and reverse recovery current as a f unct ion of collect or current
Typical rat e of f all of f orward and reverse recovery current as a f unction of IGBT t urn on gat e resist or
di F/dt ,di rr/dt = f(I c)
di F/dt ,di rr/dt = f(R g)
16000
d i /d t (A/
(A/µ
µs)
d i /dt (A/
(A/µs)
s)
8000
diF / dt
dir r/dt
diF / dt
di r r/ dt
6000
12000
4000
8000
2000
4000
0
0
0
200
400
600
800
1000
1200
0
1400
1
2
3
4
5
6
7
I C (A)
600
V
V GE =
±15
V
R gon =
2
Ω
At
V CE =
25
T j:
600
V
125 °C
°C
V GE =
±15
V
150 °C
I C=
685
A
At
figure 15.
V CE =
25
T j:
8
9
R g o n (Ω)
°C
125 °C
150 °C
IGBT
Reverse bias saf e operating area
I C = f(V CE)
I C (A)
1600
I C MAX
I c CHIP
1400
1200
MODULE
1000
Ic
800
600
V CE MAX
400
200
0
0
200
400
600
800
1000
1200
1400
V C E (V)
At
175
°C
R gon =
2
Ω
R goff =
2
Ω
Tj =
Copyright Vincotech
10
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Switching Characteristics
General conditions
=
125 °C
=
2Ω
Tj
R gon
=
R goff
figure 1.
IGBT
2Ω
figure 2.
Turn-of f Swit ching Wavef orms & def init ion of tdof f , tEof f (t Eof f = int egrating t ime f or Eof f )
IGBT
Turn-on Swit ching Wavef orms & def init ion of t don, t Eon (tEon = int egrat ing t ime f or Eon)
150
200
%
%
tdoff
100
VCE
IC
VGE 90%
150
IC
VCE 90%
VCE
100
VGE
50
VGE
tEoff
tdon
50
IC 1%
VGE 10%
0
VCE 3%
IC 10%
0
tEon
-50
-0,1
-50
0,2
0,5
0,8
1,1
1,4
1,7
6,7
t (µs)
-15
V
V GE (100%) =
15
V
V C (100%) =
600
V
I C (100%) =
686
A
t doff =
t Eoff =
0,557
1,236
µs
µs
V GE (0%) =
7,1
figure 3.
IGBT
7,5
7,9
-15
V
V GE (100%) =
15
V
V C (100%) =
600
V
I C (100%) =
686
A
t don =
t Eon =
0,768
1,515
µs
µs
V GE (0%) =
8,3
figure 4.
Turn-of f Swit ching Wavef orms & def init ion of tf
8,7
t (µs)
IGBT
Turn-on Swit ching Wavef orms & def init ion of t r
150
175
%
%
150
125
fitted
IC
125
100
VCE
IC 90%
100
75
IC 90%
IC 60%
75
tr
50
IC 40%
50
25
VCE
25
IC10%
IC
tf
0
IC 10%
0
-25
0,4
0,6
0,8
1
-25
7,64
1,2
t (µs)
7,72
7,8
7,88
7,96
600
V
V C (100%) =
600
V
I C (100%) =
686
A
I C (100%) =
686
A
tf=
0,089
µs
tr =
0,144
µs
Copyright Vincotech
8,04
8,12
8,2
t (µs)
V C (100%) =
11
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Switching Characteristics
figure 5.
IGBT
figure 6.
Turn-of f Swit ching Wavef orms & def init ion of t Eof f
IGBT
Turn-on Swit ching Wavef orms & def init ion of tEon
125
125
%
Poff
%
IC 1%
100
Eon
Pon
100
Eoff
75
75
50
50
25
25
VGE 90%
VCE 3%
VGE 10%
0
0
tEon
tEoff
-25
-25
0
0,4
0,8
1,2
6,8
1,6
7,2
7,6
8
P off (100%) =
411,59
kW
P on (100%) =
411,59
E off (100%) =
70,09
mJ
E on (100%) =
122,44
mJ
t Eoff =
1,24
µs
t Eon =
1,52
µs
figure 7.
8,4
8,8
t ( µs)
t (µs)
kW
FWD
Turn-of f Swit ching Wavef orms & def init ion of t rr
150
%
IF
100
trr
50
fitted
VF
0
IRRM 10%
IRRM 90%
IRRM 100%
-50
-100
-150
7,6
7,8
8
8,2
8,4
8,6
t (µs)
V F (100%) =
600
I F (100%) =
686
A
I RRM (100%) =
-344
A
t rr =
0,517
µs
Copyright Vincotech
V
12
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Switching Characteristics
figure 8.
FWD
figure 9.
Turn-on Swit ching Wavef orms & def init ion of t Qr (t Qr = int egrat ing t ime f or Qr)
FWD
Turn-on Swit ching Wavef orms & def init ion of t Erec (t Erec = int egrating t ime f or Erec )
125
150
%
%
IF
Erec
Qr
100
100
75
tQr
50
tErec
50
0
25
Prec
-50
0
-100
7,7
8
8,3
8,6
8,9
-25
9,2
7,7
t (µs)
8
8,3
8,6
9,2
t (µs)
I F (100%) =
686
A
P rec (100%) =
411,59
kW
Q r (100%) =
88,89
µC
E rec (100%) =
31,25
mJ
t Qr =
1,00
µs
t Erec =
1,00
µs
Copyright Vincotech
8,9
13
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Ordering Code & Marking
Version
Ordering Code
A0-VS122PA690M7-L750F70
A0-VS122PA690M7-L750F70-/3/
A0-VP122PA690M7-L750F70T
A0-VP122PA690M7-L750F70T-/3/
without thermal paste solder pins
with thermal paste solder pins
without thermal paste Press-fit pins
with thermal paste Press-fit pins
NN-NNNNNNNNNNNN-TTTTTTTVV
VIN WWYY LLLLL SSSS
Text
Datamatrix
Name
VIN
Date code
Lot
Serial
NN-NNNNNNNNNNNN-TTTTTTVV
VIN
WWYY
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
X
Y
Function
1
7,24
-0,45
Therm1
2
11,06
-0,45
Therm2
3
60,58
-0,45
G12
4
64,4
-0,45
S12
5
87,26
-0,45
C12
6
-
-
Ph
7
-
-
Ph
8
37,72
57,95
G11
9
33,92
57,95
S11
10
11
-
-
DCDC+
Copyright Vincotech
14
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
T11, T12
IGBT
1200 V
690 A
Half-Bridge Switch
D11, D12
FWD
1200 V
750 A
Half-Bridge Diode
Rt
Thermistor
Copyright Vincotech
Comment
Thermistor
15
03 Jun. 2016 / Revision 1
A0-VS122PA690M7-L750F70
A0-VP122PA690M7-L750F70T
datasheet
Packaging instruction
Standard packaging quantity (SPQ)
24
>SPQ
Document No.:
Date:
A0-Vx122PA690M7-L750F70x-D1-14
03 Jun. 2016
Standard
Modification:
<SPQ
Sample
Pages
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
03 Jun. 2016 / Revision 1
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