Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SA1694
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL
PLANAR TRANSISTOR

DESCRIPTION
The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it
uses UTC’s advanced technology to provide the customers with
high DC current gain and high collector-base breakdown voltage,
etc.
The UTC 2SA1694 is suitable for audio and general purpose,
etc.

FEATURES
* High DC current gain
* High collector-base breakdown voltage

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SA1694L-x-T3P-T
2SA1694G-x-T3P-T
TO-3P
TO-3PN
2SA1694L-x-T3N-T
2SA1694G-x-T3N-T
Note: Pin Assignment: B: Base C: Collector E: Emitter

Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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2SA1694

PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-120
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-8
A
Base Current
IB
-3
A
Collector Power Dissipation (TC=25°C)
PC
80
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn-on time
Switching time
Storage time
Fall time

SYMBOL
ICBO
IEBO
BVCEO
hFE
VCE(SAT)
fT
Cob
tON
tS
tF
TEST CONDITIONS
VCB=-120V
VEB=-6V
IC=-50mA
VCE=-4V, IC=-3A
IC=-3A, IB=-0.3A
VCE=-12V, IE=0.5A
VCB=-10V, f=1MHz
VCC=-40V, RL=10Ω, IC=-4A,
IB1=0.4A IB2=0.4A
MIN TYP MAX UNIT
-10 µA
-10 µA
-120
V
50
180
-1.5
V
20
MHz
300
pF
0.14
µS
1.40
µS
0.21
µS
CLASSIFICATION OF hFE
RANK
RANGE
O
50~100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
P
70~140
Y
90~180
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2SA1694

PNP EPITAXIAL SILICON TRANSISTOR
TEST CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R214-016.D
2SA1694
PNP EPITAXIAL SILICON TRANSISTOR
Emitter Current, -IE (uA)
Collector Current, -IC (A)
Collector Current, -IC (uA)
Collector Current, -IC (mA)
TYPICAL CHARACTERISTICS

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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