Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT80N10H
Power MOSFET
80A, 100V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT80N10H is an N-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and low gate charge, etc.
The UTC UTT80N10H applies to primary side switch,
synchronous rectifier, Motor Drives, etc.

FEATURES
* RDS(ON) <16mΩ @ VGS=10V, ID=40A
* High Cell Density Trench Technology
* High Power and Current Handling Capability

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT80N10HL-TA3-T
UTT80N10HG-TA3-T
UTT80N10HL-TF3-T
UTT80N10HG-TF3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source

Package
TO-220
TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
MARKING
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Copyright © 2016 Unisonic Technologies Co., Ltd
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UTT80N10H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
100
V
±20
V
Continuous
80
A
Drain Current
Pulsed (Note 2)
320
A
Avalanche Current (Note 2)
49
A
Single Pulsed Avalanche Energy (Note 3)
120
mJ
Peak Diode Recovery dv/dt (Note 4)
4.2
V/ns
TO-220
211
W
Power Dissipation
PD
TO- 220F
80
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
3. L = 0.1mH, IAS = 49A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD≤30A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤TJMAX, TJ = 25°C.

SYMBOL
VDSS
VGSS
ID
IDM
IAR
EAS
dv/dt
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θJA
TO-220
TO-220F
θJC
RATINGS
62.5
0.59
1.56
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate to Source Charge
QGS
IG=100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, VGS=10V, ID=0.5A,
Rise Time
tR
RG =25Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
ISD=80A
Body Diode Reverse Recovery Time
trr
IS=30A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
100
2.0
13
1
+100
-100
V
µA
nA
nA
4.0
16
V
mΩ
2750
270
90
pF
pF
pF
175
25
12
135
80
250
70
nC
nC
nC
ns
ns
ns
ns
80
320
1.25
40
40
A
A
V
ns
nC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UTT80N10H

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
QG
VGS
QGS
QGD
VD
Charge
Gate Charge Test Circuit
L
VDS
Gate Charge Waveform
Driver
RG
VDD
D.U.T.
IAS
VGS
BVDSS
tp
ID(t)
VDS(t)
VDD
IAS
0.01Ω
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
tp
Time
Unclamped Inductive Switching Waveforms
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UTT80N10H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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