Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT105N08H
Preliminary
POWER MOSFET
105A, 80V N-CHANNEL
ENHANCEMENT MODE
TRENCH POWER MOSFET

DESCRIPTION
The UTC UTT105N08H is an N-channel Power MOSFET, it
uses UTC’s advanced technology to provide the customers
with high switching speed and low gate charge, etc.
The UTC UTT105N08H applies to primary side switch,
synchronous rectifier, Motor Drives, etc.

FEATURES
* RDS(ON) < 6.5 mΩ @ VGS=10V, ID=40A
* High Cell Density Trench Technology
* High Power and Current Handling Capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT105N08HL-TA3-T
UTT105N08HG-TA3-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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UTT105N08H

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
80
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
Continuous
ID
105
A
Pulsed Drain Current
Pulsed (Note 2)
IDM
420
A
Avalanche Current (Note 3)
IAR
47
A
Avalanche energy
Single Pulsed (Note 3)
EAS
110
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.2
V/nS
Power Dissipation
PD
200
W
Junction Temperature
TJ
+150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=0.1mH, IAS=47A, VDD=50V, RG=25Ω, Starting TJ = 25°C.
4. ISD ≤30A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, TJ = 25°C.

THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
θJC
Junction to Ambient
Junction to Case

RATINGS
62.5
0.625
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=80V, VGS=0V
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge (Note 1)
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate to Source Charge
QGS
ID=100µA (Note 1, 2)
Gate to Drain Charge
QGD
Turn-on Delay Time (Note 1)
tD(ON)
VDS=30V, VGS=10V, ID=0.5A,
Rise Time
tR
RG=25Ω (Note 1, 2)
Turn-off Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
IS=40A, VGS=0V
Reverse Recovery Time (Note 1)
trr
IS=30A, VGS=0V,
dIF/dt=100A/μs
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
80
2.0
1
+100
-100
V
µA
nA
nA
4.0
6.5
V
mΩ
3800
487
215
pF
pF
pF
217
23
38
173
190
533
275
nC
nC
nC
ns
ns
ns
ns
105
420
1.2
47
53
A
A
V
nS
nC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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UTT105N08H
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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