Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UTT31N10M
Power MOSFET
31A, 100V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT31N10M is an N-channel MOSFET, it uses
UTC’s advanced technology to provide the customers with a
minimum on state resistance, etc.
The UTC UTT31N10M is suitable for boost converters and
synchronous rectifiers for consumer, telecom, industrial power
supplies and LED backlighting.

FEATURES
* RDS(ON) < 24 mΩ @ VGS=10V, ID=20A
RDS(ON) < 33 mΩ @ VGS=4.5V, ID=18A
* High frequency switching performance

SYMBOL

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UTT31N10ML-TA3-R
UTT31N10MG-TA3-R
TO-220
UTT31N10ML-TN3-R
UTT31N10MG-TN3-R
TO-252
UTT31N10MG-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
1
G
G
S
2
D
D
S
Pin Assignment
3 4 5 6
S S S G D D
7
D
Packing
8
Tube
- Tape Reel
D Tape Reel
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UTT31N10M

Preliminary
Power MOSFET
MARKING
TO-220 / TO-252
UNISONIC TECHNOLOGIES CO., LTD
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DFN-8(5×6)
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UTT31N10M

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current
TC=100°C
Pulsed Drain Current (Note 3)
TA=25°C
Continuous Drain Current
TA=70°C
Avalanche Current (Note 3)
Avalanche energy L=0.1mH (Note 3)
RATINGS
UNIT
100
V
±20
V
31
A
ID
21.5
A
IDM
80
A
6.5
A
IDSM
5
A
IAS
18
A
EAS
80.1
mJ
TO-220
125
W
Power Dissipation (Note 2)
TC=25°C
TO-252
53.5
W
DFN-8(5×6)
13.6
W
PD
TO-220
2
W
Power Dissipation (Note 1)
TA=25°C
TO-252
2.5
W
DFN-8(5×6)
1.92
W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by junction temperature.
3. L=1mH, IAS=12.7A, VDD=30V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤15A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

SYMBOL
VDSS
VGSS
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction-to-Case
SYMBOL
TO-220
TO-252
DFN-8(5×6)
TO-220
TO-252
DFN-8(5×6)
UNISONIC TECHNOLOGIES CO., LTD
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θJA
θJC
RATINGS
62.5
50
65
1
2.8
9.1
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise noted)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On State Drain Current
IGSS
Static Drain-Source On-State Resistance
VGS(TH)
ID(ON)
RDS(ON)
TEST CONDITIONS
MIN
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VDS=100V, VGS=0V, TJ=55°C
VGS=±20V, VDS=0V
100
VDS=VGS, ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A
VGS=10V, ID=20A, TJ=125°C
VGS=4.5V, ID=18A
VDS=5V, ID=20A
1.0
80
TYP MAX UNIT
1
5
±100
3.0
24
42
33
V
µA
µA
nA
V
A
mΩ
mΩ
mΩ
S
Forward Transconductance
gFS
40
DYNAMIC PARAMETERS
Input Capacitance
CISS
427
pF
=0V,
V
=25V,
f=1.0MHz
V
Output Capacitance
COSS
225
pF
GS
DS
125
pF
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VGS=0V, VDS=0V, f=1.0MHz
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS
Total Gate Charge
QG
130
nC
VDS= 50V, VGS= 10V, ID= 1.3A,
Gate to Source Charge
QGS
12
nC
IG=100µA (Note 1, 2)
13.6
nC
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
110
ns
Rise Time
tR
85
ns
VDS= 30V, VGS= 10V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
1100
ns
Fall-Time
tF
210
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous
IS
31
A
Current
Maximum Pulsed Drain-Source Diode
ISM
80
A
Forward Current
Diode Forward Voltage
VSD
IS=1A, VGS=0V
1
V
Body Diode Reverse Recovery Time
trr
44
ns
IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
Qrr
61
nC
Notes: 1. The value of θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The Power dissipation PDSM is based on θJA and the maximum allowed
junction temperature of 150°C. The value in any given application depends on the user's specific board
design, and the maximum temperature of 175°C may be used if the PCB allows it.
2. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is
more useful in setting the upper dissipation limit for cases where additional heatsinking is used.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low
frequency and duty cycles to keep initial TJ=25°C.
4. The θJA is the sum of the thermal impedance from junction to case θJC and case to ambient.
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www.unisonic.com.tw
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UTT31N10M

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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UTT31N10M

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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UTT31N10M
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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