Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
UNA10R390H
Power MOSFET
31A, 100V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UNA10R390H is an N-Channel MOSFET, it uses
UTC’s advanced technology to provide customers with a minimum
on-state resistance, etc.
The UTC UNA10R390H is suitable for high frequency DC-DC
converters.

FEATURES
* RDS(ON) < 39 mΩ @ VGS=10V, ID=18A
* Low on-resistance

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UNA10R390HL-TN3-R
UNA10R390HG-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
100
V
±20
V
TC=25°C
31 (Note 5)
A
Continuous Drain Current, VGS @ 10V
ID
TC=100°C
22
A
Pulsed Drain Current (Note 2)
IDM
125
A
Single Pulsed Avalanche Energy (Note 3)
EAS
48
mJ
Avalanche Current (Note 2)
IAR
18
A
TC=25°C
110
W
PD
Power Dissipation
TA=25°C
3.0
W
Peak Diode Recovery dv/dt (Note 4)
dv/dt
15
V/ns
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. L=0.1mH, IAS=31A, VDD=50V, RG=25Ω, Starting TJ = 25°C
4. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 30A.

SYMBOL
VDSS
VGSS
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
Junction to Ambient
θJA
Junction to Case
θJC
Note: When mounted on 1" square PCB (FR-4 or G-10 Material)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
110
1.05
UNIT
°C/W
°C/W
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
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
Drain-Source Leakage Current
IDSS
Gate-Source Leakage Current
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=100V, VGS=0V
VDS=80V, VGS=0V , TJ=150°C
VGS=20V
VGS=-20V
MIN
TYP
MAX UNIT
100
20
250
200
-200
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=18A (Note 2)
34
39
DYNAMIC PARAMETERS
Input Capacitance
CISS
360
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
125
40
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
85
VDS=50V, VGS=1.0V,
ID=1.3A, IG = 250μA
Gate to Source Charge
QGS
8
(Note 1, 2)
9
Gate-to-Drain ("Miller") Charge
QGD
Turn-ON Delay Time
tD(ON)
84
Rise Time
tR
40
VDD =30V, VGS=10V, ID =0.5A,
R
=25Ω
(Note
1,
2)
Turn-OFF Delay Time
tD(OFF)
120
G
Fall-Time
tF
30
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current (Body Diode)
IS
31
(Note 4)
Pulsed Source Current (Body Diode)
ISM
125
(Note 3)
TJ=25°C, IS=18A, VGS=0V
1.3
Diode Forward Voltage
VSD
(Note 2)
Reverse Recovery Time
tRR
100
TJ=25°C, IF=18A,
di/dt=100A/µs (Note 2)
120
Reverse Recovery Charge
QRR
Notes: 1. Pulse width ≤ 300µs; duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
3. Repetitive rating; pulse width limited by maximum junction temperature.
4. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 30A.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
V
µA
µA
nA
nA
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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