Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT75N08M
Preliminary
Power MOSFET
75A, 80V N-CHANNEL
POWERTRENCH MOSFET

DESCRIPTION
The UTC UTT75N08M is an N-channel enhancement MOSFET,
it uses UTC’s advanced technology to provide the customers with
perfect RDS(ON), high switching speed, high current capacity and low
gate charge.
The UTC UTT75N08M is suitable for DC-DC converters, Off-Line
UPS, High Voltage Synchronous Rectifier, Primary Switch for 48V
and 24V Systems, etc.

FEATURES
* RDS(ON < 11 mΩ @ VGS=10V, ID=75A
* High Switching Speed
* High Current Capacity

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT75N08ML-TA3-T
UTT75N08MG-TA3-T
UTT75N08ML-TC3-T
UTT75N08MG-TC3-T
Note: Pin Assignment: G: Gate D: Drain S: Source

Package
TO-220
TO-230
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
80
V
±20
V
Continuous
75
A
Drain Current
Pulsed (Note 2)
300
A
Single Pulsed Avalanche Energy (Note 3)
125
mJ
Peak Diode Recovery dv/dt (Note 4)
4.5
V/ns
TO-220
125
W
Power Dissipation
PD
TO-230
167
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=0.1mH, IAS=50A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤30A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

SYMBOL
VDSS
VGSS
ID
IDM
EAS
dv/dt
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
TO-220
TO-230
TO-220
TO-230
θJA
θJC
RATINGS
62.5
55
1
0.7
UNIT
°C/W
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
Forward
VGS=+20V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=75A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDD=50V,
Gate to Source Charge
QGS
ID=1.3A, IG=100µA
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A,
Rise Time
tR
VGS=10V, RG=25Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
ISD=75A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX UNIT
80
1.0
1
+100
-100
V
µA
nA
nA
3.0
11
V
mΩ
4000
320
120
pF
pF
pF
300
14
16
56
65
780
200
nC
nC
nC
ns
ns
ns
ns
75
A
300
A
1.4
V
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Preliminary
Reverse Recovery Time
trr
VGS = 0 V, ISD = 30A,
di/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
48
62
ns
nC
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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