ENA1604 D

Ordering number : ENA1604A
ATP108
P-Channel Power MOSFET
http://onsemi.com
–40V, –70A, 10.4mΩ, Single ATPAK
Features
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
•
•
•
Large current
4.5V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Unit
--40
V
±20
V
--70
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
95
mJ
--35
A
Drain Current (PW≤10μs)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
--210
A
60
W
°C
Note : *1 VDD=--15V, L=100μH, IAV=--35A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP108-TL-H
1.5
6.5
Marking
ATP108
0.4
0.4
0.5
4
Packing Type: TL
4.6
2.6
6.05
4.6
9.5
7.3
LOT No.
TL
Electrical Connection
3
0.8
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
1.7
4,2
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
61312 TKIM/N1109PA TKIM TC-00002147 No. A1604-1/7
ATP108
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
ID=--1mA, VGS=0V
VDS=--40V, VGS=0V
Ratings
min
typ
Unit
max
--40
V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--35A
RDS(on)1
ID=--35A, VGS=--10V
8
10.4
mΩ
RDS(on)2
ID=--18A, VGS=--4.5V
11.5
16.5
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
--1.5
--1
μA
±10
μA
--2.6
65
V
S
3850
pF
560
pF
Crss
390
pF
Turn-ON Delay Time
td(on)
19
ns
Rise Time
tr
340
ns
Turn-OFF Delay Time
td(off)
340
ns
Fall Time
tf
290
ns
Total Gate Charge
Qg
79.5
nC
Gate-to-Source Charge
Qgs
20
nC
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--20V, f=1MHz
See specified Test Circuit.
VDS=--20V, VGS=--10V, ID=--70A
15
IS=--70A, VGS=0V
--1.05
nC
--1.5
V
Switching Time Test Circuit
0V
--10V
VDD= --20V
VIN
ID= --35A
RL=0.57Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ATP108
P.G
50Ω
S
Ordering Information
Device
ATP108-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1604-2/7
ATP108
--40
--20
--40
--30
--1.0
--1.2
--1.4
--1.6
--1.8
Tc=25°C
Single pulse
ID= --18A
20
18
--35A
16
14
12
10
8
6
4
--2
--4
--6
--8
--10
--12
--14
Gate-to-Source Voltage, VGS -- V
°C
25
3
C
5°
2
=
Tc
10
--2
7
75
°C
5
3
2
1.0
7
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain Current, ID -- A
5 7 --100
VDD= --20V
VGS= --10V
1000
tf
2
100
tr
7
5
3
td(on)
2
25°
C
Tc=
--3.5
--4.0
--4.5
IT15181
8A
15
= --1
, ID
4.5V
= -A
VGS
= --35
V, I D
0
1
-=
VGS
10
5
--25
0
25
50
75
100
125
Case Temperature, Tc -- °C
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
150
IT15183
IS -- VSD
VGS=0V
Single pulse
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
10000
--1.4
IT15185
f=1MHz
7
Ciss, Coss, Crss -- pF
3
--3.0
20
5
td(off)
5
--2.5
Single pulse
0
--50
7
10
7
--0.1
--2.0
RDS(on) -- Tc
IT15184
SW Time -- ID
2
--1.5
25
Source Current, IS -- A
7
5
--1.0
Gate-to-Source Voltage, VGS -- V
--16
VDS= --10V
Single pulse
100
--0.5
IT15182
| yfs | -- ID
2
0
IT15180
RDS(on) -- VGS
22
0
--2.0
C
--0.8
--25°
--0.6
5°C
25°C
--0.4
Tc=
7
--0.2
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
24
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--50
--10
Drain-to-Source Voltage, VDS -- V
Forward Transfer Admittance, | yfs | -- S
--60
--20
--10
Switching Time, SW Time -- ns
--70
25°
C
.5V
VGS= --3
--30
0
Tc=
--
--80
75°
C
--2
5°C
--50
VDS= --10V
Single pulse
--90
Drain Current, ID -- A
--60
5V --4.0V
--16
.0
Drain Current, ID -- A
--70
ID -- VGS
--100
.
--4
--6
.0
-V 10.0V
--8.0
V
--80
V
Tc=25°C
Single pulse
25°C
75°C
ID -- VDS
--90
Ciss
3
2
1000
7
Coss
5
Crss
3
2
3
5 7 --1.0
2
3
5 7 --10
Drain Current, ID -- A
2
3
5 7 --100
IT15186
2
0
--5
--10
--15
--20
--25
--30
--35
Drain-to-Source Voltage, VDS -- V
--40
IT15187
No. A1604-3/7
ATP108
VGS -- Qg
--10
3
2
--7
--6
--5
3
2
10
20
30
40
50
60
Total Gate Charge, Qg -- nC
PD -- Tc
80
40
30
20
10
0
20
40
60
80
100
3
120
Case Temperature, Tc -- °C
140
160
IT15190
0μ
s
s
5 7 --1.0
2
3
5
7 --10
2
3
Drain-to-Source Voltage, VDS -- V
5
7
IT15189
EAS -- Ta
120
50
0
2
IT15188
60
1m
Tc=25°C
Single pulse
--0.1
--0.1
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
70
70
Operation in
this area is
limited by RDS(on).
3
2
--1
0
m
0m s
s
--10
7
5
--1.0
7
5
10
10
3
2
--2
0
ID= --70A
10
μs
n
--3
10
io
at
er
--4
--100
7
5
PW≤10μs
op
Drain Current, ID -- A
--8
IDP= --210A
C
D
Gate-to-Source Voltage, VGS -- V
--9
ASO
5
VDS= --20V
ID= --70A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT15179
No. A1604-4/7
ATP108
Taping Specification
ATP108-TL-H
No. A1604-5/7
ATP108
Outline Drawing
ATP108-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1604-6/7
ATP108
Note on usage : Since the ATP108 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No. A1604-7/7
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