Ordering number : ENA1654A ATP302 P-Channel Power MOSFET http://onsemi.com –60V, –70A, 13mΩ, ATPAK Features • • ON-resistance RDS(on)1=10mΩ (typ.) 4.5V drive • • Input capacitance Ciss=5400pF (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation PW≤10μs, duty cycle≤1% V ±20 V --70 A --280 A Channel Temperature PD Tch Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 197 mJ --42 A Avalanche Current *2 Tc=25°C Unit --60 70 W 150 °C Note : *1 VDD=--36V, L=100μH, IAV=--42A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP302-TL-H 1.5 6.5 Packing Type: TL Marking ATP302 0.4 0.4 0.5 4 4.6 2.6 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 62712 TKIM/21710QA TKIM TC-00002247 No. A1654-1/7 ATP302 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min ID=--1mA, VGS=0V VDS=--60V, VGS=0V typ Unit max --60 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--35A 75 RDS(on)1 ID=--35A, VGS=--10V 10 13 mΩ RDS(on)2 ID=--35A, VGS=--4.5V 13 18 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.2 --10 μA ±10 μA --2.6 V S 5400 pF 500 pF Crss 370 pF Turn-ON Delay Time td(on) 35 ns Rise Time tr 430 ns Turn-OFF Delay Time td(off) 420 ns Fall Time tf 500 ns Total Gate Charge Qg 115 nC Gate-to-Source Charge Qgs 20 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=--36V, VGS=--10V, ID=--70A Switching Time Test Circuit 0V --10V VDS=--20V, f=1MHz 25 IS=--70A, VGS=0V nC --1.0 --1.5 V Avalanche Resistance Test Circuit VDD= --36V VIN L ID= --35A RL=1.03Ω VIN D PW=10μs D.C.≤1% ≥50Ω RG VOUT ATP302 0V --10V G VDD 50Ω ATP302 P.G 50Ω S Ordering Information Device ATP302-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1654-2/7 ATP302 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 40 30 25 20 15 Tc=75°C 10 25°C --25°C 5 0 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V 100 7 2 C 5° = Tc 10 7 5 --2 °C 75 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 5 7 --100 VDD= --36V VGS= --10V 1000 75°C 25° C Tc= -5°C °C Tc= 7 25 ° --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 IT15339 Single pulse 25 20 A --35 I D= , V A 4.5 --35 = -I D= , V GS V 0 = --1 VGS 15 10 5 0 --50 --25 0 25 50 75 100 125 Case Temperature, Tc -- °C 3 2 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 150 IT15341 IS -- VSD VGS=0V Single pulse 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 10000 --1.4 IT15343 f=1MHz 7 Ciss 5 7 Ciss, Coss, Crss -- pF td(off) 5 3 tf 2 tr 100 7 5 td(on) 3 2 --0.1 --2.0 RDS(on) -- Tc IT15342 SW Time -- ID 2 --1.5 30 Source Current, IS -- A °C 25 3 --1.0 Gate-to-Source Voltage, VGS -- V --10 VDS= --10V 5 --0.5 IT15340 | yfs | -- ID 2 0 IT15338 Single pulse ID= --50A 35 0 --1.8 --2.0 5°C 25°C --0.2 --0.4 Drain-to-Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S --20 VGS= --3.0V 0 --40 Tc= 7 0 --60 --2 5 --40 --80 C --60 --100 --25° C --80 VDS= --10V --120 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A --100 --20 Switching Time, SW Time -- ns 5V --4. Drain Current, ID -- A 0V V 0. --8.0 .0V --6 --1 --120 ID -- VGS --140 Tc=25°C 25°C ID -- VDS --140 2 3 5 7 --1.0 2 3 3 2 1000 7 Coss 5 Crss 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT15344 2 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT15345 No. A1654-3/7 ATP302 VGS -- Qg --10 --7 --6 --5 --4 0 20 40 60 80 100 Total Gate Charge, Qg -- nC PD -- Tc 120 50 40 30 20 10 40 60 80 100 3 5 7 --1.0 120 Case Temperature, Tc -- °C 140 160 IT15348 2 3 5 7 --10 2 3 5 7 --100 IT15347 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 60 20 2 IT15346 70 0 Tc=25°C Single pulse --0.1 --0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 80 0 --1.0 7 5 μs n 0 Operation in this area is limited by RDS(on). 3 2 --1 1m s 10 ms 10 0m s 3 2 3 2 0μ s tio --2 ID= --70A --10 7 5 10 10 era --3 --100 7 5 PW≤10μs op Drain Current, ID -- A --8 IDP= --280A DC Gate-to-Source Voltage, VGS -- V --9 ASO 7 5 3 2 VDS= --36V ID= --70A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1654-4/7 ATP302 Taping Specification ATP302-TL-H No. A1654-5/7 ATP302 Outline Drawing ATP302-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1654-6/7 ATP302 Note on usage : Since the ATP302 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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