ATP302 D

Ordering number : ENA1654A
ATP302
P-Channel Power MOSFET
http://onsemi.com
–60V, –70A, 13mΩ, ATPAK
Features
•
•
ON-resistance RDS(on)1=10mΩ (typ.)
4.5V drive
•
•
Input capacitance Ciss=5400pF (typ.)
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
V
±20
V
--70
A
--280
A
Channel Temperature
PD
Tch
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
197
mJ
--42
A
Avalanche Current *2
Tc=25°C
Unit
--60
70
W
150
°C
Note : *1 VDD=--36V, L=100μH, IAV=--42A
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7057-001
• Package
: ATPAK
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ATP302-TL-H
1.5
6.5
Packing Type: TL
Marking
ATP302
0.4
0.4
0.5
4
4.6
2.6
6.05
4.6
9.5
7.3
LOT No.
TL
Electrical Connection
3
0.8
0.4
2.3
0.1
2.3
0.6
0.55
0.7
0.5
1
1.7
2,4
2
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
4 : Drain
ATPAK
1
3
62712 TKIM/21710QA TKIM TC-00002247 No. A1654-1/7
ATP302
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
typ
Unit
max
--60
V
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--35A
75
RDS(on)1
ID=--35A, VGS=--10V
10
13
mΩ
RDS(on)2
ID=--35A, VGS=--4.5V
13
18
mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
--1.2
--10
μA
±10
μA
--2.6
V
S
5400
pF
500
pF
Crss
370
pF
Turn-ON Delay Time
td(on)
35
ns
Rise Time
tr
430
ns
Turn-OFF Delay Time
td(off)
420
ns
Fall Time
tf
500
ns
Total Gate Charge
Qg
115
nC
Gate-to-Source Charge
Qgs
20
nC
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=--36V, VGS=--10V, ID=--70A
Switching Time Test Circuit
0V
--10V
VDS=--20V, f=1MHz
25
IS=--70A, VGS=0V
nC
--1.0
--1.5
V
Avalanche Resistance Test Circuit
VDD= --36V
VIN
L
ID= --35A
RL=1.03Ω
VIN
D
PW=10μs
D.C.≤1%
≥50Ω
RG
VOUT
ATP302
0V
--10V
G
VDD
50Ω
ATP302
P.G
50Ω
S
Ordering Information
Device
ATP302-TL-H
Package
Shipping
memo
ATPAK
3,000pcs./reel
Pb Free and Halogen Free
No. A1654-2/7
ATP302
--0.6 --0.8 --1.0 --1.2
--1.4 --1.6
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
40
30
25
20
15
Tc=75°C
10
25°C
--25°C
5
0
--2
--3
--4
--5
--6
--7
--8
--9
Gate-to-Source Voltage, VGS -- V
100
7
2
C
5°
=
Tc
10
7
5
--2
°C
75
3
2
1.0
7
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain Current, ID -- A
5 7 --100
VDD= --36V
VGS= --10V
1000
75°C
25°
C
Tc=
-5°C
°C
Tc=
7
25
°
--2.5
--3.0
--3.5
--4.0
--4.5
--5.0
IT15339
Single pulse
25
20
A
--35
I D=
,
V
A
4.5
--35
= -I D=
,
V GS
V
0
= --1
VGS
15
10
5
0
--50
--25
0
25
50
75
100
125
Case Temperature, Tc -- °C
3
2
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
150
IT15341
IS -- VSD
VGS=0V
Single pulse
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
10000
--1.4
IT15343
f=1MHz
7
Ciss
5
7
Ciss, Coss, Crss -- pF
td(off)
5
3
tf
2
tr
100
7
5
td(on)
3
2
--0.1
--2.0
RDS(on) -- Tc
IT15342
SW Time -- ID
2
--1.5
30
Source Current, IS -- A
°C
25
3
--1.0
Gate-to-Source Voltage, VGS -- V
--10
VDS= --10V
5
--0.5
IT15340
| yfs | -- ID
2
0
IT15338
Single pulse
ID= --50A
35
0
--1.8 --2.0
5°C
25°C
--0.2 --0.4
Drain-to-Source Voltage, VDS -- V
Forward Transfer Admittance, | yfs | -- S
--20
VGS= --3.0V
0
--40
Tc=
7
0
--60
--2
5
--40
--80
C
--60
--100
--25°
C
--80
VDS= --10V
--120
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
--100
--20
Switching Time, SW Time -- ns
5V
--4.
Drain Current, ID -- A
0V V
0. --8.0
.0V
--6
--1
--120
ID -- VGS
--140
Tc=25°C
25°C
ID -- VDS
--140
2
3
5 7 --1.0
2
3
3
2
1000
7
Coss
5
Crss
3
5 7 --10
Drain Current, ID -- A
2
3
5 7 --100
IT15344
2
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT15345
No. A1654-3/7
ATP302
VGS -- Qg
--10
--7
--6
--5
--4
0
20
40
60
80
100
Total Gate Charge, Qg -- nC
PD -- Tc
120
50
40
30
20
10
40
60
80
100
3
5 7 --1.0
120
Case Temperature, Tc -- °C
140
160
IT15348
2
3
5 7 --10
2
3
5 7 --100
IT15347
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
120
60
20
2
IT15346
70
0
Tc=25°C
Single pulse
--0.1
--0.1
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
80
0
--1.0
7
5
μs
n
0
Operation in
this area is
limited by RDS(on).
3
2
--1
1m
s
10
ms
10
0m
s
3
2
3
2
0μ
s
tio
--2
ID= --70A
--10
7
5
10
10
era
--3
--100
7
5
PW≤10μs
op
Drain Current, ID -- A
--8
IDP= --280A
DC
Gate-to-Source Voltage, VGS -- V
--9
ASO
7
5
3
2
VDS= --36V
ID= --70A
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1654-4/7
ATP302
Taping Specification
ATP302-TL-H
No. A1654-5/7
ATP302
Outline Drawing
ATP302-TL-H
Land Pattern Example
Mass (g) Unit
0.266 mm
* For reference
Unit: mm
6.7
6.5
1.6
2
1.5
2.3
2.3
No. A1654-6/7
ATP302
Note on usage : Since the ATP302 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No. A1654-7/7
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