Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA *Motorola Preferred Device ! These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS • VCEO(sus) 400 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 2 to 4 Amp, 25 and 100_C . . . tc @ 3A, 100_C is 180 ns (Typ) • 700 V Blocking Capability • SOA and Switching Applications Information. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v CASE 221A–06 TO–220AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO(sus) 400 Vdc Collector–Emitter Voltage VCEV 700 Vdc Emitter Base Voltage VEBO 9 Vdc Collector Current — Continuous — Peak (1) IC ICM 4 8 Adc Base Current — Continuous — Peak (1) IB IBM 2 4 Adc Emitter Current — Continuous — Peak (1) IE IEM 6 12 Adc Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2 16 Watts mW/_C Total Power Dissipation @ TC = 25_C Derate above 25_C PD 75 600 Watts mW/_C TJ, Tstg – 65 to + 150 _C Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 62.5 _C/W Thermal Resistance, Junction to Case RθJC 1.67 _C/W TL 275 _C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. REV 3 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJE13005 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 — — Vdc — — — — 1 5 — — 1 *OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) ICEV Emitter Cutoff Current (VEB = 9 Vdc, IC = 0) IEBO mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 11 RBSOA See Figure 12 *ON CHARACTERISTICS DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) (IC = 2 Adc, VCE = 5 Vdc) hFE — 10 8 — — 60 40 — — — — — — — — 0.5 0.6 1 1 — — — — — — 1.2 1.6 1.5 fT 4 — — MHz Cob — 65 — pF td — 0.025 0.1 µs tr — 0.3 0.7 µs ts — 1.7 4 µs tf — 0.4 0.9 µs tsv — 0.9 4 µs tc — 0.32 0.9 µs tfi — 0.16 — µs Collector–Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) (IC = 2 Adc, IB = 0.5 Adc) (IC = 4 Adc, IB = 1 Adc) (IC = 2 Adc, IB = 0.5 Adc, TC = 100_C) VCE(sat) Base–Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) (IC = 2 Adc, IB = 0.5 Adc) (IC = 2 Adc, IB = 0.5 Adc, TC = 100_C) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS Resistive Load (Table 2) Delay Time Rise Time Storage Time (VCC = 125 Vdc, IC = 2 A, IB1 = IB2 = 0.4 A, tp = 25 µs, Duty Cycle 1%) Fall Time Inductive Load, Clamped (Table 2, Figure 13) Voltage Storage Time Crossover Time (IC = 2 A, Vclamp = 300 Vdc, IB1 = 0.4 A, VBE(off) = 5 Vdc, TC = 100_C) Fall Time *Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%. 2 Motorola Bipolar Power Transistor Device Data VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) MJE13005 100 hFE , DC CURRENT GAIN 70 TJ = 150°C 50 25°C 30 20 – 55°C 10 VCE = 2 V VCE = 5 V 7 5 0.04 0.06 0.1 0.4 0.6 0.2 1 IC, COLLECTOR CURRENT (AMP) 2 4 2 TJ = 25°C 1.6 IC = 1 A VCE(sat) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS) VBE, BASE–EMITTER VOLTAGE (VOLTS) 0.9 TJ = – 55°C 25°C 0.7 25°C 0.5 150°C 0.3 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0.4 0 0.03 0.05 0.1 IC/IB = 4 0.45 TJ = – 55°C 0.35 25°C 0.25 0.15 150°C 0.05 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 Figure 4. Collector–Emitter Saturation Voltage 2k C, CAPACITANCE (pF) IC, COLLECTOR CURRENT ( µ A) 3 Figure 3. Base–Emitter Voltage TJ = 150°C 125°C 100°C 75°C 50°C 25°C 0.1 – 0.4 2 IC, COLLECTOR CURRENT (AMP) 1k 1 1 0.55 VCE = 250 V 10 0.2 0.3 0.5 0.7 IB, BASE CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 10 k 100 4A Figure 2. Collector Saturation Region 1.3 1.1 3A 0.8 Figure 1. DC Current Gain VBE(sat) @ IC/IB = 4 VBE(on) @ VCE = 2 V 2A 1.2 REVERSE Cib 1k 700 500 300 200 100 70 50 30 FORWARD + 0.2 + 0.4 0 – 0.2 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Motorola Bipolar Power Transistor Device Data + 0.6 20 0.3 Cob 0.5 10 30 1 3 5 50 VR, REVERSE VOLTAGE (VOLTS) 100 300 Figure 6. Capacitance 3 MJE13005 ICPK 90% Vclamp IC tsv SWITCHING TIMES NOTE Vclamp 90% IC trv tfi tti tc VCE IB 10% Vclamp 90% IB1 10% ICPK 2% IC TIME ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Figure 7. Inductive Switching Measurements Table 1. Typical Inductive Switching Performance IC AMP TC _C tsv ns trv ns tfi ns tti ns tc ns 2 25 100 600 900 70 110 100 240 80 130 180 320 3 25 100 650 950 60 100 140 330 60 100 200 350 4 25 100 550 850 70 110 160 350 100 160 220 390 NOTE: All Data recorded in the inductive Switching Circuit In Table 2. In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 – 90% Vclamp tfi = Current Fall Time, 90 – 10% IC tti = Current Tail, 10 – 2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222: PSWT = 1/2 VCCIC(tc)f ] In general, trv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. RESISTIVE SWITCHING PERFORMANCE 1 10 VCC = 125 V IC/IB = 5 TJ = 25°C 0.5 tr t, TIME ( µs) t, TIME ( µs) 0.2 0.1 0.05 2 1 0.5 td @ VBE(off) = 5 V 0.3 0.02 0.01 0.04 4 VCC = 125 V IC/IB = 5 TJ = 25°C ts 5 tf 0.2 0.1 0.2 0.4 1 2 4 0.1 0.04 0.1 0.2 0.5 1 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 8. Turn–On Time Figure 9. Turn–Off Time 2 Motorola Bipolar Power Transistor Device Data 4 MJE13005 Table 2. Test Conditions for Dynamic Performance RESISTIVE SWITCHING REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5 V 1N4933 VCC 33 +125 V MJE210 TEST CIRCUITS 0.001 µF L RC 5V 2N2222 PW DUTY CYCLE ≤ 10% tr, tf ≤ 10 ns MR826* 33 1N4933 Vclamp IC RB 1k 68 1k +5 V 5.1 k IB TUT *SELECTED FOR ≥ 1 kV D1 VCE 51 1k 1N4933 T.U.T. – 4.0 V 2N2905 0.02 µF 270 MJE200 47 100 1/2 W CIRCUIT VALUES NOTE PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 Coil Data: Ferroxcube Core #6656 Full Bobbin (~16 Turns) #16 – VBE(off) GAP for 200 µH/20 A Lcoil = 200 µH VCC = 125 V RC = 62 Ω D1 = 1N5820 or Equiv. RB = 22 Ω VCC = 20 V Vclamp = 300 Vdc TEST WAVEFORMS OUTPUT WAVEFORMS tf CLAMPED tf UNCLAMPED ≈ t2 IC t1 VCE 1 0.7 0.5 tf VCE or Vclamp t2 ≈ t –8 V Lcoil (ICpk) Vclamp tr, tf < 10 ns Duty Cycle = 1.0% RB and RC adjusted for desired IB and IC t2 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.02 0.03 0.01 0.02 SINGLE PULSE 0.02 0.05 0.1 P(pk) ZθJC(t) = r(t) RθJC RθJC = 1.67°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) ZθJC(t) 0.05 0.07 0.05 0.01 0.01 0 Test Equipment Scope–Tektronics 475 or Equivalent Lcoil (ICpk) t1 ≈ VCC t 25 µs +10 V t1 ADJUSTED TO OBTAIN IC IC(pk) TIME r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SCOPE RB 0.2 0.5 1 2 5 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1k Figure 10. Typical Thermal Response [ZθJC(t)] Motorola Bipolar Power Transistor Device Data 5 MJE13005 The Safe Operating Area Figures 11 and 12 are specified ratings for these devices under the test conditions shown. SAFE OPERATING AREA INFORMATION FORWARD BIAS IC, COLLECTOR CURRENT (AMP) 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by using the appropriate curve on Figure 13. T J(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5 2 500 µs 5 ms dc 1 0.5 1 ms 0.2 0.1 0.05 0.02 MJE13005 0.01 5 7 10 20 30 50 200 300 70 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 500 400 Figure 11. Forward Bias Safe Operating Area REVERSE BIAS IC(pk) , COLLECTOR CURRENT (AMP) 4 For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current conditions during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives the complete RBSOA characteristics. TC ≤ 100°C IB1 = 2.0 A 3 2 VBE(off) = 9 V 1 MJE13005 0 0 100 200 300 400 500 600 5V 3V 1.5 V 700 800 VCE, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS) Figure 12. Reverse Bias Switching Safe Operating Area POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) Figure 13. Forward Bias Power Derating 6 Motorola Bipolar Power Transistor Device Data MJE13005 PACKAGE DIMENSIONS –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 7 MJE13005 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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