Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ■ Features ● ● ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1.2 A Collector power TC=25°C Ta=25°C dissipation 30 PC Junction temperature Tj Storage temperature Tstg 3.0±0.5 2.9±0.2 φ3.2±0.1 1.4±0.2 2.6±0.1 1.6±0.2 0.8±0.1 1 2 0.55±0.15 2.54±0.3 3 5.08±0.5 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package W 2.0 ■ Electrical Characteristics 15.0±0.5 ● 4.6±0.2 9.9±0.3 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5kV 13.7±0.2 4.2±0.2 ● 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 hFE1 VCE = 5V, IC = 0.1A 10 hFE2 VCE = 2V, IC = 1.2A 8 Collector to emitter saturation voltage VCE(sat) IC = 1.5A, IB = 0.3A 1.0 V Base to emitter saturation voltage VBE(sat) IC = 1.5A, IB = 0.3A 1.5 V Transition frequency fT VCE = 10V, IC = 0.2A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 500V, IE = 0 max Collector cutoff current IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A, VCC = 200V V 40 10 MHz 1.0 µs 3.0 µs 0.3 µs 1 Power Transistors 2SC4953 IC — VCE IC — VCE(sat) 5.0 hFE — IC 8 TC=25˚C 250mA 200mA 2.5 150mA 2.0 100mA 1.5 50mA TC=–25˚C 6 25˚C 5 125˚C 4 3 2 1.0 1 0.5 2 4 6 8 10 12 25˚C TC=125˚C –25˚C 30 10 0 0.5 1.0 fT — IC 2.0 2.5 VCE=10V f=1MHz TC=25˚C Pulsed tw=1ms Duty cycle=1% IC/IB=10(2IB1=–IB2) VCC=200V TC=25˚C Switching time ton,tstg,tf (µs) 30 10 3 1 0.3 10 3 tstg 1 ton 0.3 tf 0.1 0.1 0.3 1 Collector current IC (A) Area of safe operation, reverse bias ASO 4.0 IC/IB=5 Lcoil=100µH TC=25˚C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) 0.3 1 3 10 Area of safe operation (ASO) 100 Non repetitive pulse Ta=25˚C Ta=85˚C 30 10 ICP t=1ms IC 3 1s 10ms 1 0.3 0.1 0.01 0.01 0.03 0.1 Collector current IC (A) 0.03 0.03 0.1 0.01 0.003 0.01 0.03 ton, tstg, tf — IC 100 100 30 1.5 Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (A) 0 Transition frequency fT (MHz) 100 0 Collector to emitter voltage VCE (V) Collector current IC (A) VCE=5V 3 0 2 Forward current transfer ratio hFE 3.0 7 Collector current IC (A) Collector current IC (A) 3.5 IB=500mA 450mA 400mA 350mA 300mA 4.0 300 IC/IB=5 4.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector current IC (A) 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V)