Power Transistors 2SC5457 Silicon NPN triple diffusion planar type Unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 For high breakdown voltage high-speed switching 2.3±0.1 ■ Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1.2 A Collector power TC=25°C dissipation Ta=25°C Storage temperature Tstg Unit: mm 2.3 0.6 0.5±0.1 30 W 1.0 ■ Electrical Characteristics 3 0.75 1 Tj 2 1:Base 2:Collector 3:Emitter U Type Package 6.5±0.2 5.35 4.35 2.3 PC Junction temperature 0.8max 1 (TC=25˚C) Parameter Collector to emitter voltage 2.3±0.1 4.6±0.1 1.8 ● 0.5±0.1 0.75±0.1 5.5±0.2 13.3±0.3 ● 1.0±0.1 0.1±0.05 0.93±0.1 6.0 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 150 ˚C –55 to +150 ˚C 2 3 2.3±0.1 ● 2.5±0.1 ■ Features 1.0±0.2 1.8±0.1 7.3±0.1 0.5±0.1 1:Base 2:Collector 3:Emitter EIAJ:SC–63 U Type Package (Z) (TC=25˚C) Symbol Parameter Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 hFE1 VCE = 5V, IC = 0.1A 10 hFE2 VCE = 2V, IC = 1.2A 8 Collector to emitter saturation voltage VCE(sat) IC = 1.5A, IB = 0.3A 1.0 V Base to emitter saturation voltage VBE(sat) IC = 1.5A, IB = 0.3A 1.5 V Transition frequency fT VCE = 10V, IC = 0.2A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 500V, IE = 0 max Collector cutoff current IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A, VCC = 200V V 40 10 MHz 1.0 µs 3.0 µs 0.3 µs 1 Power Transistors 2SC5457 PC — Ta Area of safe operation (ASO) 100 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (PC=4.5W) (3) Without heat sink (PC=1.0W) 40 (1) 30 20 Non repetitive pulse TC=25˚C 30 Collector current IC (A) Collector power dissipation PC (W) 50 10 ICP t=100µs IC 3 1ms 10ms 1 DC 0.3 0.1 10 (2) 0.03 (3) 0 0.01 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V)