TSM1NB60SCT Taiwan Semiconductor N-Channel Power MOSFET 600V, 1A, 10Ω FEATURES KEY PERFORMANCE PARAMETERS ● 100% Avalanche Tested PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 10 Ω Qg 6.1 nC ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Power Supply ● AC/DC LED Lighting TO-92 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25°C ID TC = 100°C (Note 2) 0.5 0.25 A IDM 2 A EAS 5 mJ dv/dt 4.5 V/ns PDTOT 2.5 W TJ 150 ºC TJ, TSTG - 55 to +150 °C SYMBOL LIMIT UNIT Junction to Lead Thermal Resistance RӨJL 50 °C/W Junction to Ambient Thermal Resistance RӨJA 110 °C/W Single Pulse Avalanche Energy Peak Diode Recovery dv/dt (Note 3) (Note 4) Total Power Dissipation @ TC = 25°C Operating Junction Temperature Operating Junction and Storage Temperature Range THERMAL PERFORMANCE PARAMETER Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The casethermal reference is defined at the solder mounting surface of the drain pins. R ӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. 1 Version: B1603 TSM1NB60SCT Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Static CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 5) Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.5 4.5 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 µA Drain-Source On-State Resistance VGS = 10V, ID = 0.25A RDS(ON) -- 8 10 Ω Forward Transfer Conductance VDS = 10V, ID = 0.5A gfs -- 0.8 -- S Qg -- 6.1 -- Qgs -- 1.4 -- Qgd -- 3.3 -- Ciss -- 138 -- Coss -- 17.1 -- Crss -- 4.2 -- td(on) -- 7.7 -- Dynamic (Note 6) Total Gate Charge VDS = 480V, ID = 0.5A, Gate-Source Charge VGS = 10V Gate-Drain Charge Input Capacitance VDS = 25V, VGS = 0V, Output Capacitance Reverse Transfer Capacitance Switching F = 1.0MHz nC pF (Note 7) Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 0.5A, tr -- 6.8 -- Turn-Off Delay Time VDD = 300V, RG =25Ω td(off) -- 15.3 -- tf -- 14.9 -- Turn-Off Fall Time Source-Drain Diode ns (Note 5) Source Current Integral reverse diode IS -- -- 0.5 A Source Current (Pulse) in the MOSFET ISM -- -- 2 A Diode Forward Voltage IS =0.5A, VGS = 0V VSD -- 0.9 1.4 V Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. VDD = 50V, IAS=0.5A, L=10mH, RG =25Ω, Starting TJ=25ºC 4. ISD≤0.5A, di/dt≤200A/uS, VDD≤BVDSS, Starting TJ=25ºC 5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 6. For DESIGN AID ONLY, not subject to production testing. 7. Essentially Independent of Operating Temperature. 2 Version: B1603 TSM1NB60SCT Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKAGE PACKING TSM1NB60SCT B0 TO-92 1,000pcs / Bulk TSM1NB60SCT A3 TO-92 2,000pcs / Ammo TSM1NB60SCT B0G TO-92 1,000pcs / Bulk TSM1NB60SCT A3G TO-92 2,000pcs / Ammo 3 Version: B1603 TSM1NB60SCT Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-92 PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) TO-92 AMMO PACK MARKING DIAGRAM TSC 1NB60S YML Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4 Version: B1603 TSM1NB60SCT Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: B1603