ESD201-B2-03LRH Data Sheet (1.2 MB, EN)

TVS Diode
Transient Voltage Suppressor Diodes
ESD201-B2-03LRH
Bi-directional Dual Diode for ESD/Transient Protection
ESD201-B2-03LRH
Data Sheet
Revision 1.1, 2012-09-26
Final
Power Management & Multimarket
Edition 2012-09-26
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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ESD201-B2-03LRH
Revision History: Rev. 1.0, 2012-09-19
Page or Item
Subjects (major changes since previous revision)
Revision 1.1, 2012-09-26
3
Small changes in the Features
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Last Trademarks Update 2010-10-26
Final Data Sheet
3
Revision 1.1, 2012-09-26
ESD201-B2-03LRH
Bi-directional Dual Diode for ESD / Transient Protection
1
Bi-directional Dual Diode for ESD / Transient Protection
1.1
Features
•
•
•
•
•
•
ESD / Transient protection of signal lines according to:
– IEC61000-4-2 (ESD): ±20 kV (air/contact discharge)
– IEC61000-4-4 (EFT): 40 A (5/50 ns)
– IEC61000-4-5 (surge): 2.5 A (8/20 μs)
Dual diode with small form factor of 0402 package size
Bi-directional, symmetrical working voltage: VRWM = ±5.5 V max.
Low capacitance: CL = 5 pF typ
Very low clamping voltage, low dynamic resistance down to: RDYN = 0.22 typ
Pb-free (RoHS compliant) and halogen free package
1.2
•
Application Examples
ESD protection to keypad, touchpad, buttons, audio lines, ect.
1.3
Product Description
D1
Pin 1
Pin 3
D2
Pin 2
Configuration _Schematic_Diagram .vst.vsd
Figure 1-1 Pin Configuration and Schematic Diagram
Table 1-1
Ordering Information
Type
Package
Configuration
Marking code
ESD201-B2-03LRH
TSLP-3-9
2 line, bi-directional
44
Final Data Sheet
4
Revision 1.1, 2012-09-26
ESD201-B2-03LRH
Characteristics
2
Characteristics
2.1
Maximum Ratings
Table 2-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Values
Unit
Min.
Typ.
Max.
ESD air/contact discharge
VESD
-
-
20
kV
Operating temperature range
TOP
-55
–
125
°C
150
°C
Storage temperature
Tstg
-65
–
1) VESD according to IEC61000-4-2 (R = 330 Ω, C = 150 pF discharge network)
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
Electrical Characteristics at TA = 25 °C, unless otherwise specified
VF
Forward voltage
IF
Forward current
VR
Reverse voltage
IF
I PP
RDYN
I R Reverse current
IHold
I Trig
VHold
VTrig
VR
I RWM
VRWM
VCL
VCL
VRWM
I RWM
VHold
VTrig
I Trig
IHold
RDYN
-IPP
IR
RDYN
VTrig
VCL
VHold
VRWM
Dynamic resistance
VFC
Forward clamping voltage
Triggering reverse voltage
ITrig
Triggering reverse current
Clamping voltage
I Hold
Holding reverse current
Holding reverse voltage
I PP
Reverse working voltage maximum
IRWM
Peak pulse current
Reverse working current maximum
Diode_Charac teris tic_Curv e_with _s napbac k_B -i direc tional .v s d
Figure 2-1 Definitions of electrical characteristics
Final Data Sheet
5
Revision 1.1, 2012-09-26
ESD201-B2-03LRH
Characteristics
Table 2-2
DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note /
Test Condition
Reverse working voltage
VRWM
-5.5
–
5.5
V
Reverse current
IR
–
–
100
nA
VR = 5.5 V
Unit
Note /
Test Condition
pF
VR = 0 V, f = 1 MHz
Unit
Note /
Test Condition
V
tp = 100 ns
IPP = 16 A
IPP = 16 A
Ω
tp = 100 ns
Table 2-3
AC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Line capacitance to GND
Table 2-4
CL
Min.
Typ.
Max.
–
5
7
ESD Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Clamping voltage
Pin1 or Pin2 to Pin3 (GND)
Pin3 (GND) to Pin1 or Pin2
VCL
Dynamic resistance1)
Pin1 or Pin2 to Pin3 (GND)
Pin3 (GND) to Pin1 or Pin2
RDYN
1)
Values
Values
Min.
Typ.
Max.
–
–
12.1
10.2
–
–
0.37
–
0.22
–
Please refer to Application Note AN210[1]. TSLP parameter:Z0 = 50 Ω, tp = 100 ns, tr, = 300 ps
Final Data Sheet
–
–
6
Revision 1.1, 2012-09-26
ESD201-B2-03LRH
Typical Characteristics
3
Typical Characteristics
The curves are all specified at TA = 25 °C
10-6
10-7
IR [A]
10-8
-9
10
10-10
-11
10
10-12
-6
-4
-2
0
VR [V]
2
4
6
Figure 3-1 Reverse current: IR = f(VR)
7
6
CL [pF]
5
4
3
2
1
0
-6
-5
-4
-3
-2
-1
0
1
VR [V]
2
3
4
5
6
Figure 3-2 Line capacitance CL = f(VR), f = 1 MHz
Final Data Sheet
7
Revision 1.1, 2012-09-26
ESD201-B2-03LRH
Typical Characteristics
40
ESD201-B2-03LRH
RDYN
ITLP [A]
30
RDYN=0.22Ω
20
10
0
0
10
5
15
20
25
15
20
25
VTLP [V]
Figure 3-3 Clamping voltage (TLP): ITLP = f(VTLP) GND to Line
40
ESD201-B2-03LRH
RDYN
ITLP [A]
30
RDYN=0.37Ω
20
10
0
0
5
10
VTLP [V]
Figure 3-4 Clamping voltage (TLP): ITLP = f(VTLP) Line to GND
Final Data Sheet
8
Revision 1.1, 2012-09-26
ESD201-B2-03LRH
Typical Characteristics
70
60
VCL [V]
50
VCL-max-peak = 45.0 [V]
40
VCL-30ns-peak = 10.7 [V]
30
20
10
0
-10
-100
0
100
200
300
400 500
tp [ns]
600
700
800
900
600
700
800
900
Figure 3-5 IEC61000-4-2: VCL = f(t), 8 kV positive pulse
10
0
VCL [V]
-10
-20
-30
VCL-max-peak = -66.7 [V]
-40
VCL-30ns-peak = -9.7 [V]
-50
-60
-70
-100
0
100
200
300
400 500
tp [ns]
Figure 3-6 IEC61000-4-2: VCL = f(t), 8 kV negative pulse
Final Data Sheet
9
Revision 1.1, 2012-09-26
ESD201-B2-03LRH
Package Information
4
Package Information
4.1
TSLP-3-9
Bottom view
0.4 ±0.035 1)
Top view
0.6 ±0.05
0.5 ±0.035
1)
0.575 ±0.05
2
1
0.35 ±0.05
Pin 1
marking
1±0.05
3
2 x 0.25 ±0.035 1)
0.31+0.01
-0.02
2 x 0.15 ±0.035 1)
1) Dimension applies to plated terminal
TSLP-3-9-PO V01
0.225
0.225
C
S ld
k
S
0.315
il
0.35
1.2
8
4
Pin 1
marking
R0.1
0.2
0.2
0.17
0.15
Figure 4-2 TSLP-3-9 Footprint
0.5
0.95
0.2
0.35
1
0.45
R0.19
0.38
0.6
0.255
Figure 4-1 TSLP-3-9 Package outline
0.8
TSLP-3-9-TP V02
Figure 4-3 TSLP-3-9 Packing
Figure 4-4 TSLP-3-9 Marking (example)
Final Data Sheet
10
Revision 1.1, 2012-09-26
ESD201-B2-03LRH
References
References
[1]
Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP
Characterization Methodology
[2]
Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages
Final Data Sheet
11
Revision 1.1, 2012-09-26
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