TVS Diode Transient Voltage Suppressor Diodes ESD201-B2-03LRH Bi-directional Dual Diode for ESD/Transient Protection ESD201-B2-03LRH Data Sheet Revision 1.1, 2012-09-26 Final Power Management & Multimarket Edition 2012-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ESD201-B2-03LRH Revision History: Rev. 1.0, 2012-09-19 Page or Item Subjects (major changes since previous revision) Revision 1.1, 2012-09-26 3 Small changes in the Features Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 3 Revision 1.1, 2012-09-26 ESD201-B2-03LRH Bi-directional Dual Diode for ESD / Transient Protection 1 Bi-directional Dual Diode for ESD / Transient Protection 1.1 Features • • • • • • ESD / Transient protection of signal lines according to: – IEC61000-4-2 (ESD): ±20 kV (air/contact discharge) – IEC61000-4-4 (EFT): 40 A (5/50 ns) – IEC61000-4-5 (surge): 2.5 A (8/20 μs) Dual diode with small form factor of 0402 package size Bi-directional, symmetrical working voltage: VRWM = ±5.5 V max. Low capacitance: CL = 5 pF typ Very low clamping voltage, low dynamic resistance down to: RDYN = 0.22 typ Pb-free (RoHS compliant) and halogen free package 1.2 • Application Examples ESD protection to keypad, touchpad, buttons, audio lines, ect. 1.3 Product Description D1 Pin 1 Pin 3 D2 Pin 2 Configuration _Schematic_Diagram .vst.vsd Figure 1-1 Pin Configuration and Schematic Diagram Table 1-1 Ordering Information Type Package Configuration Marking code ESD201-B2-03LRH TSLP-3-9 2 line, bi-directional 44 Final Data Sheet 4 Revision 1.1, 2012-09-26 ESD201-B2-03LRH Characteristics 2 Characteristics 2.1 Maximum Ratings Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol 1) Values Unit Min. Typ. Max. ESD air/contact discharge VESD - - 20 kV Operating temperature range TOP -55 – 125 °C 150 °C Storage temperature Tstg -65 – 1) VESD according to IEC61000-4-2 (R = 330 Ω, C = 150 pF discharge network) Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 Electrical Characteristics at TA = 25 °C, unless otherwise specified VF Forward voltage IF Forward current VR Reverse voltage IF I PP RDYN I R Reverse current IHold I Trig VHold VTrig VR I RWM VRWM VCL VCL VRWM I RWM VHold VTrig I Trig IHold RDYN -IPP IR RDYN VTrig VCL VHold VRWM Dynamic resistance VFC Forward clamping voltage Triggering reverse voltage ITrig Triggering reverse current Clamping voltage I Hold Holding reverse current Holding reverse voltage I PP Reverse working voltage maximum IRWM Peak pulse current Reverse working current maximum Diode_Charac teris tic_Curv e_with _s napbac k_B -i direc tional .v s d Figure 2-1 Definitions of electrical characteristics Final Data Sheet 5 Revision 1.1, 2012-09-26 ESD201-B2-03LRH Characteristics Table 2-2 DC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. Note / Test Condition Reverse working voltage VRWM -5.5 – 5.5 V Reverse current IR – – 100 nA VR = 5.5 V Unit Note / Test Condition pF VR = 0 V, f = 1 MHz Unit Note / Test Condition V tp = 100 ns IPP = 16 A IPP = 16 A Ω tp = 100 ns Table 2-3 AC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Line capacitance to GND Table 2-4 CL Min. Typ. Max. – 5 7 ESD Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol 1) Clamping voltage Pin1 or Pin2 to Pin3 (GND) Pin3 (GND) to Pin1 or Pin2 VCL Dynamic resistance1) Pin1 or Pin2 to Pin3 (GND) Pin3 (GND) to Pin1 or Pin2 RDYN 1) Values Values Min. Typ. Max. – – 12.1 10.2 – – 0.37 – 0.22 – Please refer to Application Note AN210[1]. TSLP parameter:Z0 = 50 Ω, tp = 100 ns, tr, = 300 ps Final Data Sheet – – 6 Revision 1.1, 2012-09-26 ESD201-B2-03LRH Typical Characteristics 3 Typical Characteristics The curves are all specified at TA = 25 °C 10-6 10-7 IR [A] 10-8 -9 10 10-10 -11 10 10-12 -6 -4 -2 0 VR [V] 2 4 6 Figure 3-1 Reverse current: IR = f(VR) 7 6 CL [pF] 5 4 3 2 1 0 -6 -5 -4 -3 -2 -1 0 1 VR [V] 2 3 4 5 6 Figure 3-2 Line capacitance CL = f(VR), f = 1 MHz Final Data Sheet 7 Revision 1.1, 2012-09-26 ESD201-B2-03LRH Typical Characteristics 40 ESD201-B2-03LRH RDYN ITLP [A] 30 RDYN=0.22Ω 20 10 0 0 10 5 15 20 25 15 20 25 VTLP [V] Figure 3-3 Clamping voltage (TLP): ITLP = f(VTLP) GND to Line 40 ESD201-B2-03LRH RDYN ITLP [A] 30 RDYN=0.37Ω 20 10 0 0 5 10 VTLP [V] Figure 3-4 Clamping voltage (TLP): ITLP = f(VTLP) Line to GND Final Data Sheet 8 Revision 1.1, 2012-09-26 ESD201-B2-03LRH Typical Characteristics 70 60 VCL [V] 50 VCL-max-peak = 45.0 [V] 40 VCL-30ns-peak = 10.7 [V] 30 20 10 0 -10 -100 0 100 200 300 400 500 tp [ns] 600 700 800 900 600 700 800 900 Figure 3-5 IEC61000-4-2: VCL = f(t), 8 kV positive pulse 10 0 VCL [V] -10 -20 -30 VCL-max-peak = -66.7 [V] -40 VCL-30ns-peak = -9.7 [V] -50 -60 -70 -100 0 100 200 300 400 500 tp [ns] Figure 3-6 IEC61000-4-2: VCL = f(t), 8 kV negative pulse Final Data Sheet 9 Revision 1.1, 2012-09-26 ESD201-B2-03LRH Package Information 4 Package Information 4.1 TSLP-3-9 Bottom view 0.4 ±0.035 1) Top view 0.6 ±0.05 0.5 ±0.035 1) 0.575 ±0.05 2 1 0.35 ±0.05 Pin 1 marking 1±0.05 3 2 x 0.25 ±0.035 1) 0.31+0.01 -0.02 2 x 0.15 ±0.035 1) 1) Dimension applies to plated terminal TSLP-3-9-PO V01 0.225 0.225 C S ld k S 0.315 il 0.35 1.2 8 4 Pin 1 marking R0.1 0.2 0.2 0.17 0.15 Figure 4-2 TSLP-3-9 Footprint 0.5 0.95 0.2 0.35 1 0.45 R0.19 0.38 0.6 0.255 Figure 4-1 TSLP-3-9 Package outline 0.8 TSLP-3-9-TP V02 Figure 4-3 TSLP-3-9 Packing Figure 4-4 TSLP-3-9 Marking (example) Final Data Sheet 10 Revision 1.1, 2012-09-26 ESD201-B2-03LRH References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages Final Data Sheet 11 Revision 1.1, 2012-09-26 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG